NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H13002U █ ＨＩＧＨ ＶＯＬＴＡＧＥ ＳＷＩＴＣＨ ＭＯＤＥ ＡＰＰＬＩＣＩＣＡＴＩＯＮＳ High Speed Switching Suitable for Switching Regulator and Montor Control █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-251 T stg ——Storage Temperature………………………… -65~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation………………………………… 10W VCBO ——Collector-Base Voltage………………………………600V 1―Base，B ２―Collector，C ３― Emitter，E VCEO——Collector-Emitter Voltage……………………………400V VE B O ——Emitter -Base Voltage………………………………9V I C ——Collector Current……………………………………1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ６００ Ｖ IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ４００ Ｖ IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage ９ Ｖ DC Current Gain １０ ４０ IE=1mA， IC=0 VCE=10V, IC=0.1A HFE VCE(sat)1 Collector- Emitter Saturation Voltage ０．８ Ｖ IC=1A, IB =500mA VCE(sat)2 Collector- Emitter Saturation Voltage ０．８ Ｖ IC=0.5A, IB =100mA VBE(sat) Base-Emitter Saturation Voltage １．２ Ｖ IC=0.5A, IB=100mA ICBO Collector Cut-off Current １０ IEBO Emitter-Base Cut-off Current １０ Current Gain-Bandwidth Product Turn On Time ８ fT tON tSTG tF Storage Time Fall Time １．１ μＡ VCB=500V, IE=0 μＡ VEB=9V, IC=0 ＭＨｚ VCE =10V,IC=0.1A,f=1MHz VCC=125V, IC=1A, μs ４．０ μs ０．７ μs IB1 =0.2A,IB2 =-0.2A RL=125Ω █ hFE Classification H1 H2 H3 H4 H5 １０—１６ １４－－２１ １９—２６ ２４－－３１ ２９－－４０