Databook.fxp 1/13/99 2:09 PM Page F-16 F-16 01/99 NJ30L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D S-D Devices in this Databook based on the NJ30L Process. Datasheet 2N5911, 2N5912 IFN5911, IFN5912 SMP5911 SMP5912 G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. At 25°C free air temperature: NJ30L Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 25 – 30 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 15V, VDS = ØV 2 40 mA VDS = 15V, VGS = ØV – 0.5 –6 V VDS = 15V, ID = 1 nA – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 8 mS VDS = 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 5 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1.5 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 2.5 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-17 F-17 01/99 NJ30L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.5 V 15 10 Transconductance in mS Drain Current in mA VGS = Ø V 12 VGS = – 0.5 V 9 VGS = –1.0 V 6 VGS = –1.5 V 3 VGS = –2.0 V 5 10 15 7 6 5 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Forward Tranconductance vs. Drain Current 35 30 25 20 15 10 5 0 –1 –2 –3 –4 –5 –6 –6 10 IDSS = 10 mA 8 IDSS = 16 mA 6 IDSS = 24 mA 4 2 0.1 1 10 Drain Source Cutoff Voltage in Volts Drain Current in mA Input Capacitance as a Function of VGS Feedback Capacitance as a Function of VGS 20 2.5 Feedback Capacitance in pF 7 Input Capacitance in pF 8 20 Forward Transconductance in mS Drain Saturation Current in mA 0 9 6 VDS = 5 V 5 VDS = 15 V 4 3 0 4 8 12 Gate Source Voltage in Volts 16 VDS = 5 V 2.0 VDS = 15 V 1.5 1.0 0.5 0 –4 –8 – 12 Gate Source Voltage in Volts – 16