Databook.fxp 1/13/99 2:09 PM Page F-48 F-48 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor ¥ Large Capacitance Detector Pre-Amplifier S-D S-D S-D G G D-S D-S D-S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C Device in this Databook based on the NJ3600L Process. Datasheet IF3601 IF3602 Die Size = 0.074" X 0.074" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ3600L Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 15 – 22 Max Unit Test Conditions V IG = 1 µA, VDS = ØV 1000 pA VGS = 10V, VDS = ØV 50 1000 mA VDS = 10V, VGS = ØV – 0.5 –3 V VDS = 10V, ID = 1 nA 1 4 Ω ID = 1 mA, VGS = ØV f = 1 kHz 100 Dynamic Electrical Characteristics Drain Source ON Resistance rds(on) Forward Transconductance (Pulsed) gfs 750 mS VDS = 10V, VGS = ØV f = 1 kHz Input Capacitance Ciss 650 pF VDS = 10V, VGS = ØV f = 1 kHz Feedback Capacitance Crss 80 pF VDS = 10V, VGS = ØV f = 1 kHz Equivalent Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 0.35 nV/√HZ VDG = 3V, ID = 5 mA f = 30 Hz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-49 F-49 01/99 NJ3600L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð1.25 V 200 375 Transconductance in mS Drain Current in mA VGS = Ø V 300 VGS = –0.3 V 225 VGS = –0.6 V 150 VGS = –0.9 V 75 VGS = –1.2 V 2 4 6 VDG = 10 V, ID = 20 mA 50 0 – 0.4 – 0.8 – 1.2 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Gfs as a Function of IDSS – 1.6 250 500 400 300 200 100 0 – 0.5 –1 – 1.5 200 150 VDG = 10 V, Id = 20 mA 100 –2 0 100 200 300 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency Input Capacitance as a Function of VGS 0.6 400 1000 VDG = 3 V ID = 5 mA Input Capacitance in pF Noise Voltage in nV/√Hz 100 8 Transconductance in mS Drain Saturation Current in mA 0 150 0.4 0.2 10 100 1K Frequency in Hz 10K 100K VDG = Ø V 800 600 400 200 0 –4 –8 – 12 Gate Source Voltage in Volts – 16