Databook.fxp 1/13/99 2:09 PM Page F-44 F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C – 65°C to +175°C Devices in this Databook based on the NJ1800D Process. Datasheet U290, U291 S Die Size = 0.052" X 0.052" All Bond Pads ≥ 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ1800D Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 20 – 30 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 10V, VDS = ØV 50 1000 mA VDS = 10V, VGS = ØV – 0.1 –7 V VDS = 10V, ID = 1 nA mS VDS = 10V, VGS = ØV f = 1 kHz Ω ID = 1 mA, VGS = ØV f = 1 kHz – 30 Dynamic Electrical Characteristics Forward Transconductance (Pulsed) gfs Drain Source ON Resistance rds(on) Input Capacitance Ciss 100 pF VDS = 10V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 50 pF VDS = 10V, VGS = ØV f = 1 MHz 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 350 2 7 www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-45 F-45 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.4 V 1000 500 Transconductance in mS Drain Current in mA VGS = Ø V 800 VGS = –0.5 V 600 VGS = –1.0 V 400 VGS = –1.5 V 200 VGS = –2.0 V 5 10 15 200 100 0 –1 –2 –3 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) RDS(ON) as a Function of VGS(OFF) 1000 800 600 400 200 0 –1 –2 –3 –4 5 4 3 2 –4 0 –2 –4 –6 Drain Source Cutoff Voltage in Volts Gate Source Cutoff Voltage in Volts Typical Gate Leakage Current as a Function of Ambient Temperature Input Capacitance as a Function of VGS –8 600 – 100 IGSS @ VGS = – 20 V VDS = Ø V Input Capacitance in pF Leakage Current in nA 300 20 Drain Source on Resistance in Ω Drain Saturation Current in mA 0 400 – 10 –1 – 0.1 VDS = Ø V 500 400 300 200 100 – 0.01 0 25 50 75 100 Temperature in °C 125 150 0 –4 –8 – 12 Gate Source Voltage in Volts – 16