IXYS IXFT21N50Q

IXFH 21N50Q
IXFT 21N50Q
HiPerFETTM
Power MOSFETs
Q-Class
VDSS
= 500 V
= 21 A
ID25
RDS(on) = 0.25 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
21
A
IDM
TC = 25°C, pulse width limited by TJM
84
A
IAR
TC = 25°C
21
A
EAR
TC = 25°C
30
mJ
1.5
mJ
15
V/ns
280
W
-55 to +150
°C
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±30 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
1.13/10 Nm/lb.in.
6
4
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
500
2.5
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
g
g
V
4.5
V
±100
nA
25
1
µA
mA
0.25
Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
(TAB)
S
G = Gate
D
= Drain
S = Source TAB = Drain
Features
l
IXYS advanced low Qg process
l
Low gate charge and capacitances
- easier to drive
- faster switching
l
International standard packages
l
Low RDS (on)
l
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
l
Advantages
l
Easy to mount
l
Space savings
l
High power density
98718B(02/04)
IXFH 21N50Q
IXFT 21N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
14
21
S
3000
pF
420
pF
Crss
110
pF
td(on)
25
ns
28
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
= 2.0 Ω (External),
51
ns
tf
12
ns
Qg(on)
84
nC
20
nC
35
nC
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
0.45
(TO-247)
Source-Drain Diode
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
21
A
ISM
Repetitive; pulse width limited by TJM
84
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.3
V
250
ns
µC
A
t rr
QRM
IRM
IF = IS, -di/dt = 100 A/µs, VR = 100 V
0.85
8
TO-247 AD (IXFH) Outline
1
Dim.
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXFH 21N50Q
IXFT 21N50Q
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
60
22
VGS = 10V
8V
7V
20
18
VGS = 10V
50
8V
7V
45
16
14
I D - Amperes
I D - Amperes
55
6V
12
10
5.5V
8
6
2
6.5V
35
30
6V
25
20
15
5V
4
40
5.5V
10
5V
5
4.5V
0
0
0
1
2
3
4
5
0
6
3
6
9
V D S - Volts
Fig. 3. Output Characteristics
@ 125ºC
18
21
24
27
30
2.8
VGS = 10V
8V
7V
6V
18
16
VGS = 10V
2.5
14
R D S ( o n ) - Normalized
20
I D - Amperes
15
V D S - Volts
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
22
5.5V
12
10
5V
8
6
2.2
1.9
I D = 21A
1.6
I D = 10.5A
1.3
1
4.5V
4
0.7
2
0.4
0
0
2
4
6
8
10
12
-50
14
-25
Fig. 5. RDS(on) Norm alized to
3.1
25
50
75
100
125
150
Fig. 6. Drain Current vs. Case
Tem perature
0.5 ID25 Value vs. ID
3.4
0
TJ - Degrees Centigrade
V D S - Volts
24
21
VGS = 10V
TJ = 125ºC
2.8
18
2.5
I D - Amperes
R D S ( o n ) - Normalized
12
2.2
1.9
1.6
15
12
9
6
1.3
TJ = 25ºC
3
1
0
0.7
0
5
10
15
20
25
30
35
I D - Amperes
© 2004 IXYS All rights reserved
40
45
50
55
60
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
98718B(02/04)
IXFH 21N50Q
IXFT 21N50Q
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
35
40
30
35
g f s - Siemens
25
I D - Amperes
TJ = -40ºC
25ºC
125ºC
30
20
15
TJ = 125ºC
25ºC
-40ºC
10
25
20
15
10
5
5
0
0
3.5
4
4.5
5
5.5
6
6.5
0
5
10
15
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
25
30
35
40
Fig. 10. Gate Charge
10
60
50
9
VDS = 250V
8
I D = 10.5A
I G = 10mA
7
40
VG S - Volts
I S - Amperes
20
I D - Amperes
30
TJ = 125ºC
20
6
5
4
3
TJ = 25ºC
10
2
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
V S D - Volts
1
1.1
0
10
20
30
40
50
60
70
80
90
Q G - nanoCoulombs
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10000
1.00
C iss
R( t h ) J C - ºC / W
Capacitance - picoFarads
f = 1MHz
1000
C oss
100
0.10
C rss
10
0.01
0
5
10
15
20
25
V D S - Volts
30
35
40
1
10
100
Pulse Width - milliseconds
1000
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344