IXFA 3N80 IXFP 3N80 HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS = 800 V ID25 = 3.6 A RDS(on) = 3.6 W trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS Continuous ±20 V VGSM Transient I D25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM I AR EAR ±30 V 3.6 A 14.4 A TC = 25°C 3.6 A TC = 25°C 10 mJ 400 mJ 5 V/ns 100 W -55 to +150 °C EAS dv/dt I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C TJ TJM 150 °C Tstg -55 to +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TO-220) Weight Symbol 1.13/10 Nm/lb.in. TO-220 TO-263 Test Conditions 4 2 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA 800 VGS(th) VDS = VGS, ID = 1 mA 2.5 I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = VDSS VGS = 0 V RDS(on) V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 50 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 3.6 W © 2000 IXYS All rights reserved TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G G = Gate S = Source D (TAB) S D = Drain TAB = Drain Features l International standard packages l Low RDS (on) l Rated for unclamped Inductive load Switching (UIS) Advantages l Easy to mount l Space savings l High power density 98746 (09/00) IXFA 3N80 IXFP 3N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 2.5 3.4 S 685 pF 73 pF Crss 16 pF td(on) 12 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 11 ns td(off) RG = 12 W (External), 25 ns tf 14 ns Qg(on) 24 nC 6 nC 9 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 1.25 (TO-220) Source-Drain Diode Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD I F = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr QRM TO-220 (IXFP) Outline IF = IS, -di/dt = 100 A/ms, VR = 100 V IRM 3.6 A 14.4 A 1.5 V 250 ns 0.52 mC 1.8 A TO-263 (IXFA) Outline 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025