IXYS IXFP3N80

IXFA 3N80
IXFP 3N80
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS
= 800 V
ID25
= 3.6 A
RDS(on) = 3.6 W
trr £ 250 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
800
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
800
V
VGS
Continuous
±20
V
VGSM
Transient
I D25
TC = 25°C
IDM
TC = 25°C, pulse width limited by TJM
I AR
EAR
±30
V
3.6
A
14.4
A
TC = 25°C
3.6
A
TC = 25°C
10
mJ
400
mJ
5
V/ns
100
W
-55 to +150
°C
EAS
dv/dt
I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
TJ
TJM
150
°C
Tstg
-55 to +150
°C
300
°C
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque (TO-220)
Weight
Symbol
1.13/10 Nm/lb.in.
TO-220
TO-263
Test Conditions
4
2
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
VDSS
VGS = 0 V, ID = 1 mA
800
VGS(th)
VDS = VGS, ID = 1 mA
2.5
I GSS
VGS = ±20 VDC, VDS = 0
I DSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.5
V
±100
nA
TJ = 25°C
TJ = 125°C
50
1
mA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
3.6
W
© 2000 IXYS All rights reserved
TO-220 (IXFP)
D (TAB)
G
DS
TO-263 (IXFA)
G
G = Gate
S = Source
D (TAB)
S
D = Drain
TAB = Drain
Features
l
International standard packages
l
Low RDS (on)
l
Rated for unclamped Inductive load
Switching (UIS)
Advantages
l
Easy to mount
l
Space savings
l
High power density
98746 (09/00)
IXFA 3N80
IXFP 3N80
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 20 V; ID = 0.5 • ID25, pulse test
2.5
3.4
S
685
pF
73
pF
Crss
16
pF
td(on)
12
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
11
ns
td(off)
RG = 12 W (External),
25
ns
tf
14
ns
Qg(on)
24
nC
6
nC
9
nC
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
RthCK
1.25
(TO-220)
Source-Drain Diode
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
K/W
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
I F = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
t rr
QRM
TO-220 (IXFP) Outline
IF = IS, -di/dt = 100 A/ms, VR = 100 V
IRM
3.6
A
14.4
A
1.5
V
250
ns
0.52
mC
1.8
A
TO-263 (IXFA) Outline
1.
2.
3.
4.
Gate
Drain
Source
Drain
Bottom Side
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025