HiPerFETTM Power MOSFETs VDSS trr 900 V 26 A 0.30 W 250 ns 900 V 25 A 0.33 W 250 ns IXFK/IXFX 26N90 IXFK/IXFX 25N90 Single MOSFET Die IDSS RDS(on) Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 900 900 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C A IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 26 25 104 100 26 25 26N90 25N90 26N90 25N90 26N90 25N90 PLUS 247TM (IXFX) (TAB) G D TO-264 AA (IXFK) A A G D EAR EAS TC = 25°C TC = 25°C dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W PD TC = 25°C 64 3 mJ J 5 V/ns 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 Nm/lb.in. PLUS 247 TO-264 6 10 Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 900 3.0 VGS(th) VDS = VGS, ID = 8mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = 0.8 •VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 © 2000 IXYS All rights reserved g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 5.0 V ±200 nA TJ = 25°C TJ = 125°C 100 2 mA mA 26N90 25N90 0.3 0.33 W W IXYS reserves the right to change limits, test conditions, and dimensions. S G = Gate S = Source (TAB) S D = Drain TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density 98553D (9/99) 1-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 18 28 S 8.7 10.8 nF 800 1000 pF 300 375 pF 60 ns 35 ns 130 ns 24 ns 240 nC 56 nC 107 nC RthJC 0.22 K/W 0.15 RthCK Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 26N90 25N90 26 25 A ISM Repetitive; pulse width limited by TJM 26N90 25N90 104 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = IS, -di/dt = 100 A/ms, VR = 100 V IRM PLUS247TM (IXFX) Outline Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA (IXFK) Outline 1.4 mC 10 A Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T © 2000 IXYS All rights reserved Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 25N90 Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 50 20 TJ = 25°C VGS = 9V 8V 6V ID - Amperes ID - Amperes 40 7V 15 TJ = 25°C 5V 10 VGS = 9V 8V 7V 6V 30 20 5V 5 10 4V 4V 0 0 0 2 4 6 8 0 10 4 8 20 Figure 4. Admittance Curves Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 30 30 25 VGS = 9V 8V 7V 25 6V 5V 20 ID - Amperes TJ = 125°C ID - Amperes 16 VCE - Volts VDS - Volts 15 10 5 20 TJ = 125OC 15 TJ = 25OC 10 5 4V 0 0 0 5 10 15 20 2 25 3 VDS - Volts 4 5 6 7 VGS - Volts Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID 2.4 2.4 VGS = 10V 2.2 RDS(ON) - Normalized 2.2 RDS(ON) - Normalized 12 2.0 TJ = 125°C 1.8 1.6 1.4 TJ = 25°C 1.2 2.0 1.6 1.4 0.8 0.8 25 20 30 ID - Amperes © 2000 IXYS All rights reserved 40 50 ID = 13A 1.2 1.0 10 ID = 26A 1.8 1.0 0 VGS = 10V 50 75 100 125 150 TJ - Degrees C 3-4 IXFK 25N90 IXFX 25N90 IXFK 26N90 IXFX 26N90 Figure 7. Gate Charge Figure 8. Capacitance Curves 20000 15 VDS = 500 V ID = 13 A IG = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 0 Crss 100 0 50 100 150 200 250 300 350 0 5 10 15 25 30 35 40 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic 50 Diode 30 Figure10. Drain Current vs. Case Temperature IXF_26N90 45 25 40 IXF_25N90 35 30 ID - Amperes ID - Amperes 20 TJ = 125oC 25 20 TJ = 25oC 15 10 20 15 10 5 5 0 0.0 0.3 0.6 0.9 1.2 1.5 0 -50 -25 0 25 50 75 100 125 150 o VSD - Volts Case Temperature - C Figure 11. Transient Thermal Resistance 0. 300 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4