Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS(on) trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR 1200 1200 V V ±30 ±40 V V TC = 25°C TC = 25°C, Note 1 TC = 25°C 20 80 10 A A A EAR EAS TC = 25°C TC = 25°C 40 2 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 780 W -55 ... +150 150 -55 ... +150 300 °C °C °C °C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.9/6 PLUS 247 TO-264 Nm/lb.in. 6 10 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 1mA 1200 V VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 2 © 2003 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. PLUS 247TM (IXFX) G D D (TAB) S TO-264 AA (IXFK) G G = Gate S = Source D D (TAB) S D = Drain TAB = Drain Features z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Temperature and lighting controls ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.75 Ω Advantages PLUS 247TM package for clip or spring mounting z Space savings z High power density z DS99112(11/03) IXFK 20N120 IXFX 20N120 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 2 15 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 27 S 7400 pF 550 pF Crss 100 pF td(on) 25 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 45 ns td(off) RG = 1 Ω (External), 75 ns 20 ns 160 nC 35 nC 60 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.16 RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 20 A ISM Repetitive; pulse width limited by TJM 80 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 300 ns trr QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V IRM Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 1.4 µC 8 A PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFK 20N100 IXFX 20N100 Fig. 1. Output Characteristics @ 25 deg. C Fig. 2. Output Characteristics @ 125 Deg. C 35 22 VGS = 10V 6V 30 18 16 5V I D - Amperes I D - Amperes 25 VGS = 10V 5V 20 20 15 10 14 12 10 8 6 4V 4 5 4V 2 0 0 0 5 10 15 20 25 0 30 5 10 V D S - Volts 15 20 25 30 35 40 V D S - Volts Fig. 3. RDS(on) Norm alized to ID25 Value vs. Junction Tem perature Fig. 4. RDS(on) Norm alized to ID25 Value vs. ID 2.6 2.8 2.6 VGS = 10V VGS = 10V 2.4 2.2 2 R D S (on) - Normalized R D S (on) - Normalized 2.4 I D = 20A 1.8 1.6 I D = 10A 1.4 1.2 1 2.2 TJ = 125ºC 2 1.8 1.6 1.4 TJ = 25ºC 1.2 0.8 1 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 0 150 5 10 15 20 25 30 35 I D - Amperes TJ - Degrees Centigrade Fig. 5. Drain Current vs. Case Tem perature Fig. 6. Input Adm ittance 30 24 22 25 20 16 I D - Amperes I D - Amperes 18 14 12 10 8 20 15 TJ = 125ºC 25ºC -40ºC 10 6 4 5 2 0 0 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 3 3.5 4 4.5 V G S - Volts 5 5.5 IXFK 20N100 IXFX 20N100 Fig. 8. Source Current vs. Source-To-Drain Voltage Fig. 7. Transconductance 70 55 50 60 45 50 TJ = -40ºC 25ºC 125ºC 35 30 I S - Amperes g f s - Siemens 40 25 20 40 30 TJ = 125ºC 20 15 10 TJ = 25ºC 10 5 0 0 0 5 10 15 20 25 30 0.4 35 0.6 0.8 I D - Amperes Fig. 9. Gate Charge 1.2 1.4 Fig. 10. Capacitance 10 10000 VDS = 600V I D = 10A I G = 10mA 9 Ciss Capacitance - pF 8 7 VG S - Volts 1 V S D - Volts 6 5 4 3 1000 Coss 100 Crss 2 f = 1MHz 1 10 0 0 20 40 60 80 100 120 140 160 0 5 10 Q G - nanoCoulombs 15 20 25 30 35 40 V D S - Volts Fig. 11. Maxim um Transient Therm al Resistance 0.18 0.16 R (th) J C - (ºC/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 1 10 Pulse Width - milliseconds 100 1000