HiPerFETTM Power MOSFETs IXFX 90N30 IXFK 90N30 VDSS ID25 RDS(on) Single MOSFET Die = 300 V = 90 A Ω = 33 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID104 IDM IAR TC TC TC TC 90 75 360 90 A A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C PLUS 247TM G (TAB) D TO-264 AA (IXFK) G TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque TO-264 0.4/6 PLUS 247 TO-264 Weight Nm/lb.in. 6 10 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 300 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2001 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 33 mΩ Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98537A (12/01) IXFK 90N30 IXFX 90N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25 Note 1 70 S 10000 pF 1800 pF Crss 700 pF td(on) 42 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 Ω (External), 40 55 ns 100 ns 40 ns 360 nC 60 nC 180 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.22 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Note 1 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = 50A,-di/dt = 100 A/µs, VR = 100 V 90 A 360 A 1.5 V 250 ns 1.4 µC 10 A IRM Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 90N30 IXFX 90N30 150 200 TJ = 25OC 7V 125 6V ID - Amperes ID - Amperes 160 VGS = 9V 8V TJ = 125OC VGS = 9V 8V 120 80 7V 6V 100 75 5V 50 5V 40 25 4V 4V 0 0 0 1 2 3 4 5 6 7 0 8 2 4 8 10 12 VDS - Volts VDS - Volts Fig.2 Output Characteristics @ Tj = 125°C Fig.1 Output Characteristics @ Tj = 25°C 3.2 3.0 VGS = 10V VGS = 10V 2.8 O TJ = 125 C 2.6 RDS(ON) - Normalized RDS(ON) - Normalized 6 2.4 2.0 1.6 TJ = 25oC 1.2 2.2 ID = 90A 1.8 ID = 45A 1.4 0.8 0 40 80 120 160 1.0 25 200 50 ID - Amperes 75 100 125 150 TJ - Degrees C Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain to Source Resistance 100 160 140 120 TJ = 150oC ID - Amperes ID - Amperes 80 60 40 100 TJ = 125oC 80 60 40 20 TJ = 25oC 20 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Fig.5 Drain Current vs. Case Temperature © 2001 IXYS All rights reserved 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS - Volts Fig.6 Drain Current vs Gate Source Voltage IXFK 90N30 IXFX 90N30 20 10 f = 100kHz Capacitance - nF VGS - Volts Ciss 10 VDS = 150 V ID = 45 A IG = 10 mA 8 6 4 2 5 Coss Crss 1 0.5 0 0 50 100 150 200 250 0 300 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 200 ID - Amperes 160 120 TJ = 125OC 80 TJ = 25OC 40 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage R(th)JC - K/W 1.000 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1