IXFK 24N100 IXFX 24N100 HiPerFETTM Power MOSFETs VDSS ID25 RDS(on) Single MOSFET Die trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, Note 1 TC = 25°C 24 96 24 A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD 5 TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight W -55 ... +150 150 -55 ... +150 300 °C °C °C °C TO-264 0.9/6 PLUS 247TM (IXFX) G Nm/lb.in. 6 10 g g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 1000 V VGS(th) VDS = VGS, ID = 8mA 3.0 5.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 2 D (TAB) D TO-264 AA (IXFK) G V/ns 560 PLUS 247 TO-264 © 2002 IXYS All rights reserved = 1000 V = 24 A = 0.39 Ω G = Gate S = Source D (TAB) S D = Drain TAB = Drain Features l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control l Temperature and lighting controls ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.39 Ω Advantages PLUS 247TM package for clip or spring mounting l Space savings l High power density l 98598B (8/02) IXFK 24N100 IXFX 24N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25 Note 2 22 S 7000 pF 750 pF Crss 260 pF td(on) 35 ns Ciss Coss 15 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 35 ns td(off) RG = 1 Ω (External), 75 ns 21 ns 250 nC 55 nC 135 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.22 RthJC RthCK 0.15 Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 24 A ISM Repetitive; pulse width limited by TJM 96 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V IRM 1.0 µC 8 A Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 PLUS 247TM Outline Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 5,017,508 5,034,796 5,049,961 5,063,307 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 24N100 IXFX 24N100 50 20 TJ = 25°C VGS = 8-10V 40 6V 10 ID - Amperes 15 ID - Amperes TJ = 25°C 7V 5 VGS = 10V 9V 8V 7V 30 20 6V 10 5V 0 0 0 2 4 6 8 10 5V 0 5 Fig.1 Output Characteristics @ Tj = 25°C TJ = 125°C VGS = 10V 9V 8V 20 25 Fig.2 Extended Output Characteristics @ Tj = 25°C 20 7V 6V 15 ID - Amperes ID - Amperes 16 15 VCE - Volts VDS - Volts 20 10 12 8 TJ = 125OC 10 TJ = 25OC 5 4 5V 0 0 4 8 12 16 20 VDS - Volts 2.4 RDS(ON) - Normalized VGS = 10V 2.0 1.8 1.6 ID = 24A 1.4 ID = 12A 1.2 1.0 0.8 25 50 75 100 3 4 5 6 7 8 VGS - Volts Fig.3 Output Characteristics @ Tj = 25°C 2.2 0 125 TJ - Degrees C Fig.5 Temperature Dependence of Drain-to- 150 Fig.4 Drain Current vs Gate Source Voltage IXFK 24N100 IXFX 24N100 20000 15 VDS = 500 V ID = 12 A IG = 10 mA Capacitance - pF VGS - Volts 12 Ciss 10000 9 6 f = 1MHz Coss 1000 3 0 Crss 100 0 50 100 150 200 250 300 350 0 5 10 50 30 40 25 ID - Amperes ID - Amperes 25 30 35 40 100 125 150 Fig. 7 Capacitance Curves Fig. 6 Gate Charge Characteristic TJ = 125oC 20 20 VDS - Volts Gate Charge - nC 30 15 TJ = 25oC 10 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 0 -50 -25 0 25 50 75 Case Temperature - oC VSD - Volts Fig. 8 Drain Current vs Drain to Source Voltage Fig. 9 Drain Current vs Case Temperature 0.300 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 Pulse Width - Seconds Fig.10 Transient Thermal Resistance 100 101