PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS(on) = 500 = 8 ≤ 0.8 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGS VGSM Maximum Ratings Continuous Transient ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω PD TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 (TO-220) 500 500 V V ±30 ±40 V V 8 14 A A 8 20 400 A mJ mJ 10 V/ns 150 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TO-263 (IXTA) G (TAB) TO-220 (IXTP) G G = Gate S = Source g g l l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 100µA 3.0 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved (TAB) D = Drain TAB = Drain Features l V 5.5 V ±100 nA 5 50 µA µA 0.8 Ω International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l TJ = 125° C D S 1.13/10 Nm/lb.in. 4 3 Symbol Test Conditions (TJ = 25° C unless otherwise specified) S Easy to mount Space savings High power density DS99321E(03/06) IXTA 8N50P IXTP 8N50P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 5 Ciss Coss 8 S 1050 pF 120 pF 12 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 22 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 28 ns td(off) RG = 18 Ω (External) 65 ns tf 23 ns Qg(on) 20 nC 7 nC 7 nC Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-263 (IXTA) Outline 0.83° C/W (TO-220) ° C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 8 A ISM Repetitive 14 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 8 A, VGS=0V, VR=100V -di/dt = 100 A/µs 400 TO-220 (IXTP) Outline ns Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 8N50P IXTP 8N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 8 16 VGS = 10V 7 6 7V 5 4 6V 3 8V 12 7V I D - Amperes I D - Amperes VGS = 10V 14 8V 2 10 8 6 6V 4 1 2 5V 5V 0 0 0 1 2 3 4 5 6 7 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3.1 8 VGS = 10V 7 R D S ( o n ) - Normalized 5 6V 4 3 2 1 VGS = 10V 2.8 8V 7V 6 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 2.5 2.2 1.9 I D = 8A 1.6 I D = 4A 1.3 1 0.7 5V 0 0.4 0 2 4 6 8 10 12 -50 14 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V D S - Volts Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.2 9 3 VGS = 10V 8 TJ = 125º C 2.8 2.6 7 2.4 6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 2 1.8 1.6 1.4 4 3 2 TJ = 25º C 1.2 5 1 1 0.8 0 0 2 4 6 8 10 I D - Amperes © 2006 IXYS All rights reserved 12 14 16 18 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 8N50P IXTP 8N50P Fig. 8. Trans conductance 12 12 10 10 - Siemens 14 8 4 25 º C fs TJ = 125 º C 6 -40 º C g I D - Amperes Fig. 7. Input Adm ittance 14 TJ = -40 º C 25 º C 125 º C 8 6 4 2 2 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 2 4 6 V G S - V olts Fig. 9. Source Curr e nt vs . Sour ce -To-Drain V oltage 10 12 14 Fig. 10. Gate Charge 24 10 20 16 V G S - Volts I S - Amperes 8 I D - A mperes 12 TJ = 125 º C 8 9 V DS = 250V 8 I D = 4A 7 I G = 10m A 6 5 4 3 TJ = 25 º C 4 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 6 V S D - V olts Q 10 12 14 16 18 20 22 - nanoCoulombs Fig. 12. Forw ard-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 10000 100 f = 1MH z R DS(on) Lim it C iss 1000 I D - Amperes Capacitance - picoFarads 8 G C oss 100 10 25µs 100µs 1m s 1 DC 10m s TJ = 150ºC C rss TC = 25ºC 10 0.1 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTA 8N50P IXTP 8N50P Fig. 13. M axim um Trans ie nt The rm al Re s is tance R ( t h ) J C - ºC / W 1.00 0.10 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2006 IXYS All rights reserved IXYS REF: T_8N50P (37) 03-21-06-A.XLS