PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 ID25 = 5 RDS(on) ≤ 1.7 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSS VGSM Continuous Transient ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω PD TC = 25°C Maximum Ratings 600 V 600 V TJ TJM Tstg TL TSOLD Md Weight ± 30 ± 40 V V 5 10 A A 5 20 360 A mJ mJ 10 V/ns 100 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 3 g 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-220) TO-220 TO-263 TO-263 (IXTA) G (TAB) TO-220 (IXTP) G BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 50μA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved (TAB) D = Drain TAB = Drain Features z Characteristic Values Min. Typ. Max. D S G = Gate S = Source z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.5 V ±100 nA 5 50 μA μA 1.7 Ω Advantages z z z Easy to mount Space savings High power density DS99426E(04/06) IXTA 5N60P IXTP 5N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 3.0 5.0 S 750 pF 78 pF Crss 6.3 pF td(on) 22 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 24 ns td(off) RG = 18 Ω (External) 55 ns 17 ns 14.2 nC 4.8 nC 4.8 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 1.25 °C/W RthJC RthCS TO-263 (IXTA) Outline (TO-220) Source-Drain Diode °C/W 0.25 Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 5 A ISM Repetitive 15 A VSD IF = IS, VGS = 0 V, IF = 5 A, -di/dt = 100 A/μs 1.5 V trr Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 500 TO-220 (IXTP) Outline ns Pins: 1 - Gate 3 - Source IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 5N60P IXTP 5N60P Fig. 1. Output Characte ris tics Fig. 2. Exte nde d Output Characte ris tics @ 25º C @ 25º C 5 10 V GS = 10V 4.5 V GS = 10V 9 8V 8V 8 4 7 I D - Amperes I D - Amperes 3.5 7V 3 2.5 2 6V 1.5 5 4 3 1 2 0.5 1 0 0 0 1 2 3 4 5 6 7 7V 6 6V 0 8 3 6 9 V D S - V olts 18 21 24 27 30 Fig. 4. RDS(on ) Norm alize d to 0.5 ID25 V alue vs . Junction Te m pe ratur e @ 125º C 5 2.6 V GS = 10V 4.5 2.4 8V 7V V GS = 10V 2.2 R D S ( o n ) - Normalized 4 I D - Amperes 15 V D S - V olts Fig. 3. Output Characte ris tics 3.5 3 6V 2.5 2 1.5 1 5V 0.5 2 1.8 1.6 I D = 5A 1.4 1.2 I D = 2.5A 1 0.8 0.6 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature Fig. 5. RDS(on) Nor m alize d to 0.5 ID25 V alue vs . ID 5.5 2.8 2.6 5.0 V GS = 10V 4.5 2.4 2.2 4.0 TJ = 125 º C I D - Amperes R D S ( o n ) - Normalized 12 2 1.8 1.6 1.4 3.5 3.0 2.5 2.0 1.5 1.2 1.0 TJ = 25 º C 1 0.5 0.8 0.0 0 1 2 3 4 5 6 I D - A mperes © 2006 IXYS All rights reserved 7 8 9 10 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 5N60P IXTP 5N60P Fig. 8. Tr ans conductance Fig. 7. Input Adm ittance 6 9 8 5 25 º C - Siemens -40 º C fs 4 TJ = 125 º C 3 2 6 5 4 T J = -40 º C 3 g I D - Amperes 7 25 º C 125 º C 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 1 2 V G S - V olts Fig. 9. Source Curr e nt vs . Sour ce -To-Dr ain V oltage 4 5 6 Fig. 10. Gate Char ge 14 10 9 V DS = 300V 8 I D = 2.5A 7 I G = 10m A 12 V G S - Volts 10 I S - Amperes 3 I D - A mperes 8 TJ = 125 º C 6 4 6 5 4 3 TJ = 25 º C 2 2 1 0 0 0.5 0.6 0.7 0.8 0.9 0 2 4 V S D - V olts 6 Q G 8 10 12 14 16 - nanoCoulombs Fig. 12. M axim um Tr ans ie nt The r m al Re s is tance Fig. 11. Capacitance 10000 10.00 1000 R ( t h ) J C - ºC / W Capacitance - picoFarads f = 1MH z C is s 100 C os s 1.00 0.10 10 C rs s 1 0.01 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10