Advanced Technical Information IXTQ 36N50P IXTT 36N50P PolarHVTM Power MOSFET VDSS ID25 = 500 V = 36 A ≤ 170 mΩ Ω RDS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGSS ±20 V VGSM ±30 V 36 A 100 A ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C 36 A EAR TC = 25°C 50 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 10 V/ns PD TJ TJM Tstg 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Mounting torque G D (TO-3P) 500 W -55 ... +150 150 -55 ... +150 °C °C °C 300 250 °C °C 1.13/10 Nm/lb.in. TO-268 (IXTT) G = Gate S = Source TO-3P TO-268 5.5 5.0 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) g g D = Drain TAB = Drain z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages VGS = 0 V, ID = 250 μA 500 VGS(th) VDS = VGS, ID = 250μA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V V z TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved D (TAB) Characteristic Values Min. Typ. Max. VDSS RDS(on) S Features z Weight D (TAB) S G TC = 25°C TL TO-3P (IXTQ) 5.0 V ±100 nA 25 250 μA μA 170 mΩ z z Easy to mount Space savings High power density DS99228(11/04) IXTQ 36N50P IXTT 36N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 25 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 35 S 4800 pF 510 pF C rss 60 pF td(on) 29 ns tr VGS = 10 V, VDS = 0.5 ID25 23 ns td(off) RG = 4 Ω (External) 82 ns 23 ns 135 nC 30 nC 65 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.25 RthCK 0.21 Source-Drain Diode TO-3P (IXTQ) Outline K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 36 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25A, -di/dt = 100 A/μs QRM VR = 100V 300 ns 3.3 μC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXTQ 36N50P IXTT 36N50P Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ 25ºC @ 25ºC 80 32 VGS = 10V 28 8V 7V VGS = 10V 70 8V 24 6V 20 16 12 50 6.5V 40 6V 30 5.5V 20 8 4 5.5V 10 5V 0 5V 0 0 1 2 3 4 5 6 7 0 2 4 6 Fig. 3. Output Characteristics @ 125ºC 10 12 14 16 18 20 22 24 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 36 3.1 VGS = 10V 32 2.8 R D S ( o n ) - Normalized 7V 6V 28 I D - Amperes 8 V D S - Volts V D S - Volts 24 20 5.5V 16 12 5V 8 4.5V 4 VGS = 10V 2.5 2.2 1.9 I D = 36A 1.6 I D = 18A 1.3 1 0.7 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 40 3.4 VGS = 10V 3 35 30 TJ = 125ºC 2.6 I D - Amperes R D S ( o n ) - Normalized 7V 60 I D - Amperes I D - Amperes 36 2.2 1.8 1.4 25 20 15 10 TJ = 25ºC 1 5 0.6 0 0 10 20 30 40 50 I D - Amperes © 2004 IXYS All rights reserved 60 70 80 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 36N50P IXTT 36N50P Fig. 8. Transconductance Fig. 7. Input Adm ittance 55 70 50 45 g f s - Siemens I D - Amperes 40 35 30 25 20 TJ = 125ºC 15 25ºC -40ºC 60 TJ = -40ºC 50 25ºC 125ºC 40 30 20 10 10 5 0 0 4 4.5 5 5.5 6 6.5 7 0 10 20 30 V G S - Volts 50 60 70 80 90 Fig. 10. Gate Charge 100 10 90 9 VDS = 250V 80 8 I D = 18A 70 7 I G = 10mA VG S - Volts I S - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 60 50 40 TJ = 125ºC 30 40 I D - Amperes 6 5 4 3 20 2 TJ = 25ºC 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 V S D - Volts 20 40 60 80 100 120 140 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 TC = 25ºC C iss I D - Amperes Capacitance - picoFarads TJ = 150ºC 1000 C oss 100 R DS(on) Limit 100 25μs 100μs 10 1ms DC C rss f = 1MHz 10 10ms 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTQ 36N50P IXTT 36N50P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R ( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 © 2004 IXYS All rights reserved 1 10 Pu ls e W id th - millis e c o n d s 100 1000