IXYS IXTA42N25P

PolarHTTM
Power MOSFET
IXTA 42N25P
IXTP 42N25P
IXTQ 42N25P
VDSS
ID25
RDS(on)
= 250 V
= 42 A
≤ 84 mΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
250
250
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25° C
TC = 25° C, pulse width limited by TJM
42
110
A
A
IAR
TC = 25° C
42
A
EAR
TC = 25° C
30
mJ
EAS
TC = 25° C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤150° C, RG = 10 Ω
10
V/ns
PD
TC = 25° C
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Md
Mounting torque
Weight
TO-3P
TO-220
TO-263
(TO-3P / TO-220)
G
(TAB)
TO-220 (IXTP)
G
g
g
g
G
BVDSS
VGS = 0 V, ID = 250 µA
250
VGS(th)
VDS = VGS, ID = 250µA
3.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
© 2006 IXYS All rights reserved
TJ = 125° C
(TAB)
S
(TAB)
D = Drain
TAB = Drain
Features
l
Characteristic Values
Min. Typ.
Max.
D
G = Gate
S = Source
l
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
D S
TO-3P (IXTQ)
1.13/10 Nm/lb.in.
5.5
4
3
S
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
V
5.5
V
±100
nA
25
250
µA
µA
84
mΩ
Advantages
l
l
l
Easy to mount
Space savings
High power density
DS99157E(12/05)
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
12
Ciss
Coss
20
S
2300
pF
430
pF
115
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
td(on)
24
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
28
ns
td(off)
RG = 10 Ω (External)
81
ns
tf
30
ns
Qg(on)
70
nC
17
nC
37
nC
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.42°C/W
(TO-3P)
(TO-220)
Source-Drain Diode
°C/W
°C/W
0.21
0.25
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
42
A
ISM
Repetitive
110
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
TO-3P (IXTQ) Outline
200
ns
2.0
µC
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Pins: 1 - Gate
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
2 - Drain
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 1. Output Characte ris tics
Fig. 2. Exte nde d Output Characte r is tics
@ 25º C
@ 25º C
110
45
V GS = 10V
40
90
35
30
25
7V
20
15
9V
80
8V
I D - Amperes
I D - Amperes
V GS = 10V
100
9V
6V
70
8V
60
50
40
7V
30
10
20
5
6V
5V
10
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
4
3
6
9
V D S - V olts
Fig. 3. Output Characte ris tics
@ 125ºC
15
18
21
24
27
Fig. 4. RDS(on ) Norm alize d to 0.5 ID25
V alue vs . Junction Te m pe ratur e
45
2.8
V GS = 10V
40
2.6
9V
8V
30
25
7V
20
15
6V
10
V GS = 10V
2.4
R D S ( o n ) - Normalized
35
I D - Amperes
12
V D S - V olts
2.2
2
1.8
I D = 42A
1.6
1.4
I D = 21A
1.2
1
0.8
5
0.6
5V
0
0.4
0
1
2
3
4
5
V D S - V olts
6
7
8
9
-50
50
75
100
125
150
45
V GS = 10V
40
3.8
35
3.4
I D - Amperes
R D S ( o n ) - Normalized
25
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
0.5 ID25 V alue vs . ID
4.2
0
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to
4.6
-25
TJ = 125ºC
3
2.6
2.2
1.8
30
25
20
15
10
1.4
TJ = 25ºC
1
0.6
5
0
0
10
20
30
40
50
60
70
I D - A mperes
© 2006 IXYS All rights reserved
80
90 100 110
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
30
70
TJ = -40ºC
27
60
25ºC
125ºC
24
40
30
TJ = 125ºC
20
21
g f s - Siemens
I D - Amperes
50
18
15
12
9
25ºC
-40ºC
10
6
3
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
8.5
10
20
30
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
50
70
80
90
10
105
90
VG S - Volts
75
60
45
TJ = 125ºC
9
VDS = 125V
8
I D = 21A
7
I G = 10mA
6
5
4
3
30
2
TJ = 25ºC
15
1
0
0
0.4
0.6
0.8
1
V S D - Volts
1.2
0
1.4
10
20
30
40
50
60
70
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 150ºC
C iss
TC = 25ºC
R DS(on) Limit
I D - Amperes
Capacitance - picoFarads
60
Fig. 10. Gate Charge
120
I S - Amperes
40
I D - Amperes
1000
C oss
100
100
25µs
100µs
1ms
10
C rss
10ms
DC
10
1
0
5
10
15
20
25
V D S - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXTA 42N25P IXTP 42N25P
IXTQ 42N25P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0.45
0.40
R ( t h ) J C - ºC / W
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
Pu ls e W id th - m illis e c o n d s
© 2006 IXYS All rights reserved
1000