PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS(on) N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 200 200 V V ±20 V 50 120 A A ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM IAR TC = 25°C 50 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Md Mounting torque Weight TO-3P TO-220 TO-263 360 W -55 ... +175 175 -55 ... +125 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 5.5 4 3 g g g Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved (TAB) S TO-220 (IXTP) G (TAB) D S G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features (TO-3P / TO-220) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) D TO-263 (IXTA) TJ ≤ 150°C, RG = 10 Ω PD G V 5.0 V ±100 nA 25 250 µA µA 60 mΩ z z z Advantages z z z TJ = 150°C 50 International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99156A(04/04) IXTA 50N20P IXTP 50N20P IXTQ 50N20P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 50 A pulse test 12 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss 23 S 2250 pF 500 pF 125 pF td(on) 26 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT 35 ns td(off) RG = 10 Ω (External) 70 ns tf 30 ns Qg(on) 70 nC 17 nC 37 nC VGS= 10 V, VDS = 0.5 VDSS, ID = IT Qgs Qgd RthJC RthCK 0.42 K/W (TO-3P) (TO-220) Source-Drain Diode 0.21 0.25 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 50 A ISM Repetitive 120 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM TO-3P (IXTQ) Outline 180 ns 2.0 µC TO-220 (IXTA) Outline Notes: Test current IT = 50 A. TO-263 (IXTP) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 1. Ou tp u t C h ar acte r is tics Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics @ 25 º C @ 25 º C 100 50 V G S = 10V 45 40 80 9V 9V 70 30 I D - Amperes I D - Amperes 35 8V 25 20 7V 15 10 60 50 8V 40 30 7V 20 6V 5 10 0 6V 0 0 0 .5 1 1.5 VD S 2 2.5 3 3.5 0 6 2.8 R D S ( o n ) - Normalized 35 8V 25 20 7V 15 6V 10 10 S 12 - V olts 14 16 18 20 V GS = 10V 9V 30 8 VD 3.1 V G S = 1 0V 40 2.5 2.2 I D = 50A 1.9 1.6 I D = 25A 1.3 1 0.7 5 5V 0.4 0 0 1 2 3 VD 4 S 5 6 - V olts 7 -50 8 0.5 I D 25 V alu e vs . I D 4. 2 0 25 50 75 100 125 150 175 Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 55 50 V G S = 1 0V 3. 8 -25 TJ - Degrees Centigrade Fig . 5. R D S( o n ) No r m aliz e d to 45 3. 4 40 TJ = 1 75 ºC 3 I D - Amperes R D S ( o n ) - Normalized 4 Fig . 4. RD S(o n ) No r m aliz e d to 0.5 I D 25 V alu e vs . Ju n ctio n T e m p e r atu r e 50 45 2 - V olts Fig . 3. Ou tp u t C h ar acte r is tics @ 150 º C I D - Amperes V GS = 10V 90 2. 6 2. 2 T J = 1 25 ºC 1. 8 35 30 25 20 15 1. 4 10 T J = 2 5 ºC 1 5 0. 6 0 0 10 20 30 40 50 60 I D - A mperes © 2004 IXYS All rights reserved 70 80 90 100 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 8. T r an s co n d u ctan ce 90 36 80 32 70 28 60 24 T J = -40 ºC 20 2 5ºC 1 50 ºC g f s - Siemens I D - Amperes Fig . 7. In p u t A d m ittan ce 50 40 30 TJ = 150ºC 20 25ºC -40ºC 16 12 8 10 4 0 0 5 6 7 8 9 10 0 20 40 V G S - V olts Fig . 9. So u r ce C u r r e n t vs . So u r ce -T o -Dr ain V o ltag e V G S - Volts 100 75 1 20 9 V D S = 1 00 V 8 I D = 2 5A 7 I G = 1 0m A 6 5 4 3 TJ = 150ºC 25 2 TJ = 25ºC 1 0 0 0.4 0.6 0. 8 1 V S D - V olts 1. 2 0 1. 4 10 20 Q 30 G 40 50 60 70 - nanoCoulombs Fig . 12. Fo r w ar d -Bias Saf e Op e r atin g A r e a Fig . 11. C ap acitan ce 10 00 10000 f = 1MH z T J = 1 75 ºC R D S( on) Lim it C is s I D - Amperes Capacitance - picoFarads 10 0 Fig . 10. Gate C h ar g e 125 I S - Amperes 80 10 150 50 60 I D - A mperes 1000 C os s T C = 2 5ºC 1 00 25 µs 10 0µs 1m s 10 10 m s DC C rs s 100 1 0 5 10 15 VD 20 S 25 - V olts 30 35 40 10 VD 10 0 S - V olts 10 00 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXTA 50N20P IXTP 50N20P IXTQ 50N20P Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e 0.45 0.40 R ( t h ) J C - ºC / W 0.35 0.30 0.25 0.20 0.15 0.10 0.05 1 10 100 Pu ls e W id th - m illis e c o n d s © 2004 IXYS All rights reserved 1000