IXYS IXTQ50N20P

PolarHTTM
Power MOSFET
IXTQ 50N20P
IXTA 50N20P
IXTP 50N20P
= 200 V
= 50 A
Ω
= 60 mΩ
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Preliminary Data Sheet
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
200
200
V
V
±20
V
50
120
A
A
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
50
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Md
Mounting torque
Weight
TO-3P
TO-220
TO-263
360
W
-55 ... +175
175
-55 ... +125
°C
°C
°C
300
260
°C
°C
1.13/10 Nm/lb.in.
5.5
4
3
g
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
(TAB)
S
TO-220 (IXTP)
G
(TAB)
D S
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
(TO-3P / TO-220)
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
D
TO-263 (IXTA)
TJ ≤ 150°C, RG = 10 Ω
PD
G
V
5.0
V
±100
nA
25
250
µA
µA
60
mΩ
z
z
z
Advantages
z
z
z
TJ = 150°C
50
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99156A(04/04)
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 50 A pulse test
12
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
23
S
2250
pF
500
pF
125
pF
td(on)
26
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
35
ns
td(off)
RG = 10 Ω (External)
70
ns
tf
30
ns
Qg(on)
70
nC
17
nC
37
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgs
Qgd
RthJC
RthCK
0.42 K/W
(TO-3P)
(TO-220)
Source-Drain Diode
0.21
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
50
A
ISM
Repetitive
120
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V
QRM
TO-3P (IXTQ) Outline
180
ns
2.0
µC
TO-220 (IXTA) Outline
Notes: Test current IT = 50 A.
TO-263 (IXTP) Outline
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
Pins:
1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 1. Ou tp u t C h ar acte r is tics
Fig . 2. Exte n d e d Ou tp u t C h ar acte r is tics
@ 25 º C
@ 25 º C
100
50
V G S = 10V
45
40
80
9V
9V
70
30
I D - Amperes
I D - Amperes
35
8V
25
20
7V
15
10
60
50
8V
40
30
7V
20
6V
5
10
0
6V
0
0
0 .5
1
1.5
VD
S
2
2.5
3
3.5
0
6
2.8
R D S ( o n ) - Normalized
35
8V
25
20
7V
15
6V
10
10
S
12
- V olts
14
16
18
20
V GS = 10V
9V
30
8
VD
3.1
V G S = 1 0V
40
2.5
2.2
I D = 50A
1.9
1.6
I D = 25A
1.3
1
0.7
5
5V
0.4
0
0
1
2
3
VD
4
S
5
6
- V olts
7
-50
8
0.5 I D 25 V alu e vs . I D
4. 2
0
25
50
75
100
125
150
175
Fig . 6. Dr ain C u r r e n t vs . C as e
T e m p e r atu r e
55
50
V G S = 1 0V
3. 8
-25
TJ - Degrees Centigrade
Fig . 5. R D S( o n ) No r m aliz e d to
45
3. 4
40
TJ = 1 75 ºC
3
I D - Amperes
R D S ( o n ) - Normalized
4
Fig . 4. RD S(o n ) No r m aliz e d to 0.5 I D 25
V alu e vs . Ju n ctio n T e m p e r atu r e
50
45
2
- V olts
Fig . 3. Ou tp u t C h ar acte r is tics
@ 150 º C
I D - Amperes
V GS = 10V
90
2. 6
2. 2
T J = 1 25 ºC
1. 8
35
30
25
20
15
1. 4
10
T J = 2 5 ºC
1
5
0. 6
0
0
10
20
30
40
50
60
I D - A mperes
© 2004 IXYS All rights reserved
70
80
90
100
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 8. T r an s co n d u ctan ce
90
36
80
32
70
28
60
24
T J = -40 ºC
20
2 5ºC
1 50 ºC
g f s - Siemens
I D - Amperes
Fig . 7. In p u t A d m ittan ce
50
40
30
TJ = 150ºC
20
25ºC
-40ºC
16
12
8
10
4
0
0
5
6
7
8
9
10
0
20
40
V G S - V olts
Fig . 9. So u r ce C u r r e n t vs .
So u r ce -T o -Dr ain V o ltag e
V G S - Volts
100
75
1 20
9
V D S = 1 00 V
8
I D = 2 5A
7
I G = 1 0m A
6
5
4
3
TJ = 150ºC
25
2
TJ = 25ºC
1
0
0
0.4
0.6
0. 8
1
V S D - V olts
1. 2
0
1. 4
10
20
Q
30
G
40
50
60
70
- nanoCoulombs
Fig . 12. Fo r w ar d -Bias
Saf e Op e r atin g A r e a
Fig . 11. C ap acitan ce
10 00
10000
f = 1MH z
T J = 1 75 ºC
R D S( on) Lim it
C is s
I D - Amperes
Capacitance - picoFarads
10 0
Fig . 10. Gate C h ar g e
125
I S - Amperes
80
10
150
50
60
I D - A mperes
1000
C os s
T C = 2 5ºC
1 00
25 µs
10 0µs
1m s
10
10 m s
DC
C rs s
100
1
0
5
10
15
VD
20
S
25
- V olts
30
35
40
10
VD
10 0
S
- V olts
10 00
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXTA 50N20P IXTP 50N20P
IXTQ 50N20P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0.45
0.40
R ( t h ) J C - ºC / W
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
1000