High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS ID25 RDS(on) 1200 V 3A 4.5 Ω Maximum Ratings ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR TO-220 (IXTP) D (TAB) G 3 A 12 A TC = 25°C 3 A TC = 25°C 20 mJ 700 mJ 5 V/ns 200 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C Features 300 °C z EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque (TO-220) Weight TO-220 TO-263 Symbol Test Conditions VDSS VGS(th) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 µA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Note 1 © 2004 IXYS All rights reserved 1.13/10 Nm/lb.in. 4 2 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.0 TJ = 25°C TJ = 125°C 5.0 V V ±100 nA 25 1 µA mA 4.5 Ω DS TO-263 (IXTA) G G = Gate S = Source z z z D (TAB) S D = Drain TAB = Drain International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS98844E(02/04) IXTA 3N120 IXTP 3N120 Symbol Test Conditions gfs VDS = 20 V; ID = 0.5 • ID25, Note 1 1.5 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 2.6 S 1100 1350 pF 110 135 pF Crss 40 td(on) 17 60 pF ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 Ω (External), 32 ns tf 18 ns Qg(on) 42 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 8 nC 21 nC RthJC RthCK 0.62 (TO-220) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM TO-220 (IXTP) Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 0.25 Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 A Repetitive; pulse width limited by TJM 12 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 700 TO-263 (IXTA) Outline ns Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTA 3N120 IXTP 3N120 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 3 7 VG S = 10V 7V 7V 6V 2 5 I D - Amperes I D - Amperes 2.5 VG S = 10V 6 1.5 1 5V 0.5 4 6V 3 2 5V 1 0 0 0 2 4 6 V DS - Volts 8 10 12 0 5 20 25 30 Fig. 4. RDS(on) Normalized to ID25 Value vs. @ 125 Deg. C Junction Temperature 3 2.8 VG S = 10V 7V 2.5 R D S (on) - Normalized 2.5 6V 2 1.5 5V 1 0.5 VG S = 10V 2.2 1.9 I D = 3A 1.6 1.3 I D = 1.5A 1 0.7 0.4 0 0 5 10 15 20 -50 25 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Fig. 5. RDS(on) Normalized to ID25 Temperature Value vs. ID 3.5 2.8 VG S = 10V 2.5 3 T J = 125º C 2.2 I D - Amperes R D S (on) - Normalized 15 V DS - Volts Fig. 3. Output Characteristics I D - Amperes 10 1.9 1.6 T J = 25º C 1.3 2.5 2 1.5 1 0.5 1 0 0.7 0 1 2 3 4 I D - Amperes © 2004 IXYS All rights reserved 5 6 7 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 3N120 IXTP 3N120 Fig. 8. Transconductance Fig. 7. Input Admittance 8 6 7 5 T J = -40º C g f s - Siemens I D - Amperes 6 4 3 T J = 120º C 2 25º C 125º C 4 3 2 -40º C 1 25º C 5 1 0 0 3.5 4 4.5 5 5.5 6 0 6.5 1.5 Fig. 9. Source Current vs. Source-To-Drain 6 7.5 9 40 48 10 9 VD S = 600V I D = 1.5A I G = 10mA 8 8 7 6 VG S - Volts I S - Amperes 4.5 Fig. 10. Gate Charge Voltage 5 4 T J = 125º C 3 2 6 4 2 1 T J = 25º C 0 0 0.4 0.5 0.6 0.7 0.8 0 0.9 8 16 24 32 Q G - nanoCoulombs V SD - Volts Fig. 12. Maximum Transient Thermal Fig. 11. Capacitance Resistance 10000 0.7 f = 1M Hz 0.6 C iss R (th) J C - (ºC/W) Capacitance - pF 3 I D - Amperes V GS - Volts 1000 C oss 100 C rss 0.5 0.4 0.3 0.2 0.1 10 0 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343