IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS(on) = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25° C 140 A ID(RMS) External lead current limit IDM TC = 25° C, pulse width limited by TJM 75 A 300 A IAR TC = 25° C 60 A EAR TC = 25° C 80 mJ EAS TC = 25° C 2.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +175 175 -55 ... +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-3P TO-268 (TO-3P) 1.13/10 Nm/lb.in. 5.5 5.0 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) G D TO-268 (IXTT) G G = Gate S = Source l l VGS(th) VDS = VGS, ID = 250µA 3.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % V l l TJ = 175° C 9 5.0 V ±100 nA 25 500 µA µA 11 mΩ mΩ D (TAB) D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect l 100 S Features Advantages VGS = 0 V, ID = 250 µA (TAB) S Characteristic Values Min. Typ. Max. BVDSS © 2006 IXYS All rights reserved g g TO-3P (IXTQ) l Easy to mount Space savings High power density DS99133E(12/05) IXTQ 140N10P IXTT 140N10P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 45 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 65 S 4700 pF 1850 pF 600 pF Crss td(on) 35 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 50 ns td(off) RG = 4 Ω (External) 85 ns 26 ns 155 nC 33 nC 85 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS TO-3P (IXTQ) Outline 0.25°C/W (TO-3P) °C/W 0.21 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 140 A ISM Repetitive 300 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 50 V, VGS = 0 V 120 2.0 TO-268 (IXTT) Outline ns µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTQ 140N10P IXTT 140N10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 300 140 VGS = 10V 9V 120 VGS = 10V 270 240 9V 210 80 I D - Amperes I D - Amperes 100 8V 60 7V 40 180 150 8V 120 90 7V 60 20 6V 30 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 6V 0 1.6 0 V D S - Volts Fig. 3. Output Characteristics @ 150ºC VGS = 10V 9V I D - Amperes 100 8V 80 7V 60 6V 40 20 4 D S 5- Volts 6 V 7 8 9 10 2 1.8 I D = 140A 1.6 1.4 I D = 70A 1.2 1 0.8 5V 0 0.6 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current 3 90 2.75 80 2.5 2 VGS = 10V 1.75 1.5 VGS = 15V 1.25 0 25 50 75 100 125 TJ - Degrees Centigrade 150 175 External Lead Current Limit 70 TJ = 175ºC 2.25 -25 Fig. 6. Drain Current vs. Case Tem perature I D - Amperes R D S ( o n ) - Normalized 3 VGS = 10V 2.2 R D S ( o n ) - Normalized 120 2 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 2.4 140 1 60 50 40 30 20 TJ = 25ºC 10 1 0 0.75 0 50 100 150 200 I D - Amperes © 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTQ 140N10P IXTT 140N10P Fig. 8. Transconductance Fig. 7. Input Adm ittance 250 90 225 80 200 70 g f s - Siemens I D - Amperes 175 150 125 100 TJ = 150ºC 75 25ºC 50 50 TJ = -40ºC 25ºC 40 150ºC 30 20 -40ºC 25 60 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 9.5 40 80 120 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 200 240 280 320 120 140 160 Fig. 10. Gate Charge 10 300 VDS = 50V 9 250 I D = 70A 8 I G = 10mA 7 200 VG S - Volts I S - Amperes 160 I D - Amperes 150 100 6 5 4 3 TJ = 150ºC 50 2 TJ = 25ºC 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - Volts 20 40 60 80 100 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 1000 10000 1000 TC = 25ºC R DS(on) Limit C iss I D - Amperes Capacitance - picoFarads TJ = 175ºC C oss 25µs 100µs 100 1ms 10ms C rss DC f = 1MHz 100 10 0 5 10 15 20 25 V DS - Volts 30 35 40 IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 V D S - Volts 100 1000 IXTQ 140N10P IXTT 140N10P F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e R( t h ) J C - ºC / W 1.00 0.10 0.01 0.1 1 10 Pu ls e W id th - m illis e c o n d s © 2006 IXYS All rights reserved 100 1000