IXTH 88N30P IXTT 88N30P PolarHTTM Power MOSFET RDS(on) VDSS = 300 ID25 = 88 Ω = 40 mΩ V A N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM 300 300 V V ±20 V TO-247 (IXTH) D (TAB) ID25 TC = 25°C 88 A ID(RMS) External lead current limit 75 A IDM TC = 25°C, pulse width limited by TJM 220 A IAR TC = 25°C 60 A EAR TC = 25°C 60 mJ EAS TC = 25°C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C z 1.13/10 Nm/lb.in. z TJ ≤ 150°C, RG = 4 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque Weight TO-247 TO-264 TO-268 6 10 5 TO-268 (IXTT) G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features z g g g International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2004 IXYS All rights reserved V 5.0 V ±100 nA 25 250 µA µA 40 mΩ z z z Easy to mount Space savings High power density PolarHTTM DMOS transistors utilize proprietary designs and process. US patent is pending. DS99129A(01/04) IXTH 88N30P IXTT 88N30P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 50 S 6300 pF 950 pF 190 pF 25 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 24 ns td(off) RG = 3.3 Ω (External) 96 ns 25 ns 180 nC 44 nC 90 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.21 K/W RthJC RthCK (TO-247) (TO-264) Source-Drain Diode 0.21 0.15 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. typ. Max. Symbol Test Conditions IS VGS = 0 V 88 A ISM Repetitive 220 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = 25 A -di/dt = 100 A/µs VR = 100 V QRM 250 ns 3.3 µC TO-247 AD Outline 1 2 Dim. 3 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTH 88N30P IXTT 88N30P Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 200 90 VGS = 10V 9V 8V 80 9V 160 140 60 I D - Amperes I D - Amperes 70 VGS = 10V 180 50 7V 40 30 6V 20 1.5 60 6V 5V 0 0 1 80 20 5V 0.5 7V 100 40 10 0 8V 120 2 2.5 3 3.5 0 4 2 4 6 Fig. 3. Output Characteristics @ 125ºC 12 14 16 18 20 3 VGS = 10V 9V 8V 70 2.8 VGS = 10V 2.6 R D S (on) - Normalized 80 I D - Amperes 10 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature 90 7V 60 50 40 6V 30 20 2.4 2.2 2 1.8 I D = 88A 1.6 1.4 I D = 44A 1.2 1 0.8 5V 10 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 -50 -25 V D S - Volts 3.2 50 75 100 125 150 100 VGS = 10V 3 25 Fig. 6. Drain Current vs. Case Tem perature 0.5 ID25 Value vs. ID 3.4 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to 90 80 2.8 2.6 TJ = 125ºC 2.4 2.2 2 1.8 1.6 70 I D - Amperes R D S (on) - Normalized 8 V D S - Volts V D S - Volts 60 50 40 30 1.4 20 1.2 TJ = 25ºC 1 10 0 0.8 0 20 40 60 80 100 120 140 160 180 200 I D - Amperes © 2004 IXYS All rights reserved -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTH 88N30P IXTT 88N30P Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 160 90 140 TJ = -40ºC 25ºC 125ºC 80 100 80 60 TJ = 125ºC 25ºC -40ºC 40 70 g f s - Siemens I D - Amperes 120 60 50 40 30 20 20 10 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 0 20 40 60 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 100 120 140 160 180 140 160 180 Fig. 10. Gate Charge 280 10 VDS = 150V 9 240 I D = 44A 8 200 I G = 10mA 7 VG S - Volts I S - Amperes 80 I D - Amperes 160 120 TJ = 125ºC 80 6 5 4 3 2 TJ = 25ºC 40 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 20 40 60 80 100 120 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 C iss I D - Amperes Capacitance - picoFarads TJ = 150ºC C oss 1000 TC = 25ºC R DS(on) Limit 100 100µs 25µs 1ms 10ms 10 DC C rss f = 1MHz 100 1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTH 88N30P IXTT 88N30P Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce R(th) J C - ºC / W 1.00 0.10 0.01 1 10 1 00 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 1000