PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V Maximum Ratings VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25° C 88 A ID(RMS) External lead current limit 75 A IDM TC = 25° C, pulse width limited by TJM 220 A IAR TC = 25° C 60 A EAR TC = 25° C 60 mJ EAS TC = 25° C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤150° C, RG = 4 Ω 10 V/ns PD TC = 25° C 600 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C G TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-247 TO-264 TO-3P & TO-268 D D (TAB) S TO-264 (IXTK) G D S D (TAB) TO-3P (IXTQ) G D (TAB) S TO-268 (IXTT) 1.13/10 Nm/lb.in. 6.0 10 5.5 Symbol Test Conditions (TJ = 25° C, unless otherwise specified) g g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 300 VGS(th) VDS = VGS, ID = 250µA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved = 300 V = 88 A ≤ 40 mΩ Ω TJ = 125° C V 5.0 V ±100 nA 100 1 µA mA 40 mΩ G G = Gate S = Source S D (TAB) D = Drain TAB = Drain Features l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density DS99129E(12/05) IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 45 60 S 6300 pF 950 pF Crss 190 pF td(on) 25 ns Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 24 ns td(off) RG = 3.3 Ω (External) 96 ns 25 ns 180 nC 44 nC 90 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC 0.21° C/W TO-247 and TO-3P TO-264 RthCS RthCS ° C/W ° C/W 0.21 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 88 A ISM Repetitive 220 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr QRM IF = 25 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 250 3.3 ns µC Characteristic Curves Fig. 2. Extended Output Characteristics @ 25ºC Fig. 1. Output Characteristics @ 25ºC 200 90 VGS = 10V 9V 8V 80 9V 160 140 60 I D - Amperes I D - Amperes 70 VGS = 10V 180 50 7V 40 30 20 6V 5V 1 1.5 7V 100 80 60 6V 20 5V 0 0 0.5 120 40 10 0 8V 2 2.5 3 3.5 4 0 2 4 6 8 10 12 14 16 V D S - Volts V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 18 20 IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Fig. 3. Output Char acte r is tics @ 125ºC Fig. 4. RDS(on ) Nor m alize d to 0.5 ID25 V alue vs . Junction Te m pe r atur e 90 3 V GS = 10V 9V 8V I D - Amperes 70 V GS = 10V 2.6 R D S (on) - Normalized 80 2.8 7V 60 50 40 6V 30 20 2.2 2 1.8 I D = 88A 1.6 1.4 I D = 44A 1.2 1 0.8 5V 10 2.4 0.6 0 0.4 0 1 2 3 4 5 6 7 8 9 -50 V D S - V olts -25 125 150 70 2.8 2.6 TJ = 125ºC I D - Amperes R D S (on) - Normalized 100 External Lead C urrent Lim it 80 2.4 2.2 2 1.8 1.6 1.4 60 50 40 30 20 1.2 TJ = 25ºC 10 1 0 0.8 0 20 40 60 80 -50 100 120 140 160 180 200 I D - A mperes -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 100 160 90 140 TJ = -40ºC 25ºC 125ºC 80 g f s - Siemens 120 I D - Amperes 75 90 V GS = 10V 3 50 Fig. 6. Dr ain Cur r e nt vs . Cas e Te m pe r atur e 0.5 ID25 V alue vs . ID 3.2 25 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to 3.4 0 100 80 60 TJ = 125ºC 25ºC -40ºC 40 20 70 60 50 40 30 20 10 0 0 4 4.5 5 5.5 6 6.5 V G S - Volts © 2006 IXYS All rights reserved 7 7.5 8 0 20 40 60 80 100 120 I D - Amperes 140 160 180 IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 10 280 240 VDS = 150V 8 I D = 44A I G = 10mA 7 VG S - Volts I S - Amperes 200 9 160 120 TJ = 125ºC 80 6 5 4 3 2 TJ = 25ºC 40 1 0 0 0.4 0.6 0.8 1 V S D - Volts 1.2 1.4 0 1.6 20 40 60 80 100 120 140 160 180 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 10000 1000 C iss I D - Amperes Capacitance - picoFarads TJ = 150ºC R DS(on) Limit C oss 1000 TC = 25ºC 100 100µs 25µs 1ms 10ms 10 DC C rss f = 1MHz 100 1 0 5 10 15 20 25 V D S - Volts 30 35 40 10 100 1000 V D S - Volts Fig. 13. Maximum Transient Thermal Resistance R(th) J C - ºC / W 1.00 0.10 0.01 1 10 100 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. 1000 IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P TO-247 (IXTH) Outline 1 2 TO-268 (IXTT) Outline 3 Terminals: 1. Gate 2,4. Drain 3. Source Dim. TO-3P (IXTQ) Outline Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-264 (IXTK) Outline © 2006 IXYS All rights reserved Terminals: 1. Gate 2,4. Drain 3. Source