IXYS IXFE44N60

HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFE 44N60
VDSS
ID25
RDS(on)
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
S
trr ≤ 250 ns
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
600
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
600
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
41
A
IDM
TC = 25°C, pulse width limited by TJM
176
A
IAR
TC = 25°C
44
A
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
-
°C
2500
3000
V~
V~
TJ
1.6 mm (0.63 in) from case for 10 s
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
600 V
41 A
Ω
130 mΩ
G
Preliminary data sheet
TJ
TJM
Tstg
=
=
=
t = 1 min
t=1s
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
Weight
ISOPLUS 227TM (IXFE)
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Conforms to SOT-227B outline
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
g
Applications
• DC-DC converters
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
V GS = 0 V, ID = 3 mA
600
VGH(th)
V DS = VGS, ID = 8 mA
2.5
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
V DS = VDSS
V GS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Note1
© 2002 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
4.5
V
±200
nA
100 µA
2 mA
130 mΩ
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Low cost
• Easy to mount
• Space savings
• High power density
98894 (1/02)
IXFE 44N60
Symbol
Test Conditions
gfs
VDS = 10 V; ID = IT, Note:1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
30
Ciss
45
S
8900
pF
1000
pF
Crss
330
pF
td(on)
42
ns
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
td(off)
RG = 1 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
55
ns
110
ns
45
ns
330
nC
60
nC
65
nC
0.25
RthJC
RthCK
0.07
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
ISOPLUS-227 B
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
44
A
Repetitive;
pulse width limited by TJM
176
A
VSD
IF = IS, VGS = 0 V,
Note:1
1.3
V
t rr
QRM
IRM
IF = 50A, -di/dt = 100 A/µs, VR = 100 V
250
ns
µC
A
1.4
8
Please see IXFN44N60 data sheet
for characteristic curves.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. Test current IT = 22A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1