SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70±0.30 D 0.85 MAX E Φ3.20±0.20 F 3.00±0.30 12.30 MAX G 0.75 MAX R H 13.60±0.50 J K 3.90 MAX L 1.20 1.30 M V N 2.54 4.50±0.20 O P 6.80 2.60±0.20 Q R 10° H S 25° 5° T U 0.5 V 2.60±0.15 P F U ・Complementary to TIP32CF. S G B E MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 3 Pulse ICP 5 IB 1 A 2 W 25 W Tj 150 ℃ Tstg -55～150 ℃ L K CHARACTERISTIC T L Base Current Collector Power Ta=25℃ Dissipation Tc=25℃ Junction Temperature Storage Temperature Range PC D D N N T T A 1 2 3 Q O Collector Current J M 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 100 - - V Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.3 mA Collector Cut-off Current ICES VCE=100V, VEB=0 - - 200 μA Emitter Cut-off Current IEBO VBE=5V, IC=0 - - 1 mA DC Current Gain hFE VCE=4V, IC=1A 25 - - VCE=4V, IC=3A 10 - 50 Collector Emitter Sustaining Voltage Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=375mA - - 1.2 V Base-Emitter On Voltage VBE(on) VCE=4V, IC=3A - - 1.8 V 3.0 - - MHz fT Transition Frequency 2002. 6. 14 Revision No : 0 VCE=10V, IC=500mA f=1MHz 1/2 TIP31CF V CE(sat) ,VBE(sat) - I C 1k 500 300 VCE =-4V SATURATION VOLTAGE V CE(sat) ,VBE(sat) (mV) DC CURRENT GAIN hFE h FE - I C 100 50 30 10 5 3 -3 -10 -30 -100 -300 -1k VBE(sat) -100 -50 -30 VCE(sat) -1 -3 -10 -30 -100 -300 -1k -3k -10k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) P C - Ta SAFE OPERATING AREA -10 25 20 15 10 5 I C MAX.(PULSE) * -5 I C MAX. (CONTIN -UOUS) -3 DC -1 -0.5 0 50 100 150 Revision No : 0 200 * AT * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.3 -0.1 0 OP ER -4 -10 -30 s 0µ 10 COLLECTOR CURRENT I C (A) 30 AMBIENT TEMPERATURE Ta ( C) 2002. 6. 14 -1k -500 -300 -10 -3k -10k I C /I B =10 s 1m s 5m COLLECTOR POWER DISSIPATION P C (W) 1 -1 -10k -5k -3k * * IN G -50 -100 -200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2/2