Light Emitting Diode(GaN) KLM-821G 参考 Reference KLM-821G has a 1W High power GaN green LED and has the optimized optical characteristics. DIMENSIONS Features • Low forward voltage operated • More Energy Efficient than incandescent and most halogen lampes Applications • Portable flashlight • Bollards,Security,Garden lighting • LCD Back light • General lighting [ Ta=25°C ] Maximum Ratings Parameter Symbol Ratings Unit Reverse Voltage VR 5 V Forward current IF 350 mA IFP 1000 mA PD 1000 mW Topr. -30 ~ + 110 °C Tstg. -40 ~ +120 °C Tsol. 260 °C Pulse forward current *1 Power dissipation Operating temperature Storage temperature Soldering Temperature *2 *1. IFP Measured under duty £ 1/10 @ 1KHz *2. Soldering time £ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 350 mA - 2.5 - V Flux Im IF = 350 mA - 60 - lm Doninant Wave Length λd IF = 350 mA 520 - 530 nm Spectral half bandwidth ∆λ IF = 350 mA - 20 - nm Half angle ∆Θ IF = 350 mA - 90 - deg. 1/2 Light Emitting Diode(GaN) KLM-821G Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 400 Relative intensity Forward current IF(mA) (IF) 500 300 Rth(J-A)=60℃/W Rth(J-A)=50 ℃/W 200 Rth(J-A)=40 ℃/W Rth(J-A)=30℃/W 100 0 25 0 50 75 100 1 0.5 0 (℃) 125 (IF) 100 200 300 350 400 450 500 0 Ambient temperature Ta Forward current IF Relative intensity vs. Wavelength 1.2 1 10 Intensity [arb.] Relative radiant intensity PO Relative radiant intensity vs. Ambient temperature 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 100 (℃) 0 400 450 Ambient temperature Ta 550 600 650 Radiant Pattern Angle(deg) 450 400 0 +4 +60 350 +20 0 -20 -4 0 0 -6 +80 50 -80 -100 0 +100 Forward current IF Forward current vs. Forward voltage 300 250 200 100 50 0 0 500 Wave Length[nm] 100 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 100