Light Emitting Diode(GaAlAs) KLP-32R-X DIMENSIONS KLP-32R-x has a high bright InGaAlP red LED and has the optimized optical characteristics. 1 Features • Transparent epoxy Encapsulent • High Optical Output 2 Applications n o i t c ee nd e no d oh o Ct n aA nC . i. 2 P1 • Display • Indicator • Signage [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 20 mA IFP 0.1 A PD 90 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +105 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec Electro-Optical Characteristics Parameter Forward voltage [ Ta=25°C ] Symbol VF Po Iv λP Conditions IF = 20 mA IF = 20 mA Min 6.00 280 - Typ 1.8 6.80 350 630 Max 2.2 - Unit V mW mcd nm Doninant Wave Length λd IF = 20 mA 620 - 635 nm Spectral half bandwidth ∆λ IF = 20 mA - 20 - nm Half angle ∆θ IF = 20 mA - 110 - deg. Optical Output Power Peak emission wavelength IF = 20 mA 1/2 Light Emitting Diode(InGaAlP) KLP-32R-X Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 25 Relative intensity w 20 Cu n Forward current IF(mA) (IF) 30 15 10 0 0 20 40 60 80 (℃) 100 1 0.5 0 5 0 10 15 20 25 Forward current IF Ambient temperature Ta 30 (IF) 35 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 Intensity [arb.] Relative radiant intensity PO 1.2 10 1 0.8 0.6 0.4 0.2 0.1 -20 0 20 40 60 80 0 500 100 (℃) 550 600 650 700 750 Wave Length[nm] Ambient temperature Ta Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) 0 + 60 +4 +20 -20 -4 0 50 0 -80 -100 +80 10 0 -6 5 0 + 10 0 Forward current IF 30 25 20 15 0 0 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 100 50 50 Relative intensity(%) 2/2 100