Light Emitting Diode(InGaN) KLB-0315 G DIMENSIONS KLB-0315 G is a high bright InGaN green LED, and has the optimized optical characteristics. Features • Transparent epoxy Encapsulent • High Optical Output Applications • Amusement • Indicator • Display [ Ta=25°C ] Maximum Ratings Symbol Ratings Unit IF 20 mA IFP 30 mA PD 100 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +100 °C Tsol. 260 °C Parameter Forward current Pulse forward current *1 Power dissipation Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 20 mA - 3.2 - V Optical Output Power Iv IF = 20 mA 2000 3000 - mcd Doninant Wave Length λd IF = 20 mA 520 - 530 nm Spectral half bandwidth ∆λ IF = 20 mA - 30 - nm Half angle ∆Θ IF = 20 mA - 40 - deg. 1/2 Light Emitting Diode(InGaN) KLB-0315 G Forward current vs. Ambient temperature Radiant Intensity vs. Forward current Forward current IF(mA) (IF) 30 1.5 25 Relative intensity w 20 u 15 10 0 0 20 40 60 80 (℃) 100 1 0.5 0 5 0 Ambient temperature Ta 10 15 20 25 30 (IF) 35 Forward current IF Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 1 Intensity [arb.] Relative radiant intensity PO 1.2 10 1 0.1 0.8 0.6 0.4 0.2 -20 0 20 40 60 80 0 400 450 500 550 600 650 100 (℃) Wave Length[nm] Ambient temperature Ta Forward current IF[mA] Forward current vs. Forward voltage Radiant Pattern Angle(deg) 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Relative intensity(%) Forward voltage VF[V] 2/2