NE9000 SERIES NE9001 SERIES NE9002 SERIES Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • TYPICAL LINEAR GAIN vs. FREQUENCY CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB 24 21 HIGH POWER ADDED EFFICIENCY Linear Gain (dB) • • DESCRIPTION The NE9000, NE9001, and NE9002 are 0.5 micron recessed gate medium power GaAs FETs for commercial and space amplifier and oscillator applications to 20 GHz. Chip configurations available are: the NE900000, a one cell die of 400 µm gate width; the NE900100, a one cell die of 750 µm gate width; and the NE900200, a two cell die of 1500 µm total gate width. The series is available in chip form or a variety of hermetic ceramic packages. The NE900000, NE900100, and NE900200 are standard die without wrap-around sourcemetallization, while the NE900000G, NE900100G, and NE900200G have wrap-around source metallization. The series is space qualified. 18 NE9000 15 12 NE9001/9002 9 6 3 2.0 10.0 Frequency (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER SYMBOLS IDSS VP gm RTH (C-C) PT PTEST P1dB G1dB ηADD PACKAGE OUTLINE PARAMETERS AND CONDITIONS Saturated Drain Current at VDS = 2.5 V, VGS = 0 Pinch-off Voltage at VDS = 2.5 V, IDS = 2.5 mA IDS = 5 mA IDS = 10 mA Transconductance at VDS = 2.5 V, IDS = 50 mA IDS = 90 mA IDS = 180 mA Thermal Resistance (Channel-to-Case) Total Power Dissipation Power Output at Test Point PIN = 11 dBm, VDS = 8V, ID = 50mA, f = 8 GHz PIN = 12 dBm,VDS = 8V, ID = 50mA f = 14.5 GHz PIN = 15 dBm, VDS = 8V, ID = 90mA f = 14.5 GHz PIN = 19 dBm, VDS = 8 V, ID = 180 mA, f = 14.5 Output Power at 1 dB Compression Point, VDS = 8 V, ID = 50 mA, f = 8 GHz VDS = 8 V, ID = 50 mA, f = 14.5 GHz VDS = 8 V, ID = 90 mA, f = 14.5 GHz VDS = 8 V, ID = 180 mA, f = 14.5 GHz Gain at 1 dB Compression Point VDS = 8 V, ID = 50 mA, f = 8 GHz VDS = 8 V, ID = 50 mA, f = 14.5 GHz VDS = 8 V, ID = 90 mA, f = 14.5 GHz VDS = 8 V, ID = 180 mA, f = 14.5 GHz Power Added Efficiency VDS = 8 V, at P1dB Conditions. NE900089A 89A UNITS MIN TYP MAX NE900000 NE900000G NE900075 00 (CHIP), 75 MIN TYP MAX mA 80 120 150 80 120 150 V V V -1.5 -3.5 -5 -1.5 -3.5 -5 mS mS mS 25 NE900200 NE900200G NE900275 00 (CHIP), 75 MIN TYP MAX 150 225 300 300 450 600 -2 -3.5 -5 -2 -3.5 -5 25 50 100 °C/W W dBm NE900100 NE900100G NE900175 00 (CHIP), 75 MIN TYP MAX 180 0.8 19.5 180 0.8 100 1.5 50 3 20.5 dBm 19.5 20.5 dBm 22 23 dBm 25.5 dBm dBm dBm dBm 20.5 dB dB dB dB 9 % 27 26.5 20 23 25 8 7 7 27 27 26 California Eastern Laboratories NE9000, NE9001, NE9002 SERIES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 20 VGS Gate to Source Voltage V -9 ID Drain Current NE900000, NE900075/89 NE900100, NE900175 NE900200, NE900275 mA mA mA Gate Current NE900000, NE900075/89 NE900100, NE900175 NE900200, NE900275 IG 150 300 600 mA mA mA 1.3 2.6 5 3 Total Power Dissipation, PT (W) SYMBOLS POWER DERATING CURVE NE9002 2 NE9001 1 NE9000 0 0 OUTLINE DIMENSIONS (Units in mm) 50 100 150 200 Case Temperature, TA (°C) PACKAGE OUTLINE 75 +0.15 -0.05 2 PLACES φ 1.8 PACKAGE OUTLINE 89A GATE 0.5 ± 0.1 SOURCE 2.03 ± 0.2 4.0 MIN (ALL LEADS) S 2.7±0.3 2.3±0.1 0.51 3.0 MIN BOTH LEADS DRAIN D G 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX S 1.02 2.3 1.13 1.6 MAX 0.9 MAX NE900000 (CHIP) (Units in µm) 50 0.1 400 NE900100/NE900200 (CHIP)* (Units in µm) 52 D 550 53 D D 430 50 228 62 G 440 130 S S 50 240 G 62 G 142 131 Die Thickness: 110 to 160 µm S S S Recommended Bonding Area. 50 Glassivated Area 116 80 Plated Wraparound (Optional) HANDLING PRECAUTIONS DIE ATTACHMENT Die attach can be accomplished with Au-Ge (390 ± 10°C) preforms in a forming gas environment. Epoxy die attach is not recommended. ture should be lowered. BONDING The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. Gate and drain bonding wires should be semi-hard gold wire (3 to 8% elongation) 30 microns or less in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15°. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 300°C to 10 minute curve. If longer periods are required, the tempera- PRECAUTIONS The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS NE900000 VDS = 8 V, ID = 50 mA FREQUENCY S11 (MHz) MAG 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 .96 .90 .87 .85 .82 .79 .75 .73 .72 .71 .72 .73 .74 .75 .74 .71 .65 S21 ANG S12 S22 MAG ANG MAG ANG -42 -59 -73 -85 -94 -103 -112 -120 -128 -134 -140 -144 -147 -149 -151 -152 -155 3.00 2.71 2.48 2.28 2.10 1.94 1.79 1.64 1.51 1.38 1.27 1.17 1.09 1.04 1.01 1.03 1.10 148 136 125 114 105 96 88 80 73 67 62 58 54 51 48 45 40 .04 .04 .05 .06 .06 .07 .07 .07 .07 .07 .07 .07 .07 .08 .09 .10 .11 69 66 62 58 55 53 52 52 53 55 58 63 69 74 78 81 82 MAG ANG MAG ANG MAG .91 .82 .77 .75 .74 .74 .73 .72 .72 .72 .72 .73 .73 .74 .73 .71 .67 -63 -81 -97 -110 -120 -129 -135 -141 -145 -148 -150 -152 -153 -155 -157 -161 -167 4.54 3.70 3.14 2.75 2.44 2.17 1.93 1.70 1.50 1.34 1.21 1.13 1.08 1.05 1.03 1.00 .93 137 124 111 100 91 83 77 71 67 62 58 55 51 48 44 41 36 .05 .05 .06 .06 .07 .07 .07 .07 .07 .07 .07 .08 .08 .09 .10 .12 .13 MAG ANG .80 .78 .76 .74 .72 .71 .70 .70 .70 .71 .71 .71 .71 .71 .70 .69 .68 -11 -12 -13 -17 -20 -24 -28 -32 -34 -36 -38 -39 -40 -41 -43 -47 -53 NE900100 VDS = 8 V, ID = 90 mA FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 S11 S21 S12 S22 ANG 63 55 51 48 47 48 49 52 55 60 65 70 74 78 80 82 82 MAG .47 .46 .44 .43 .41 .40 .39 .39 .40 .41 .43 .46 .47 .49 .49 .46 .41 ANG -26 -33 -38 -43 -47 -53 -58 -64 -70 -76 -81 -86 -90 -94 -98 -102 -109 NE9000, NE9001, NE9002 SERIES NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS +90˚ +60˚ +120˚ S11 18 GHz +150˚ S21 1.5 GHZ +30˚ S12 18 GHZ S12 1.5 GHZ S22 18 GHz 0˚ ±180˚ S21 18 GHZ S22 1.5 GHz -30˚ -150˚ S11 1.5 GHz -60˚ -120˚ -90˚ NE900200 VDS = 8 V, ID = 180 mA FREQUENCY S11 S21 S12 S22 GHz MAG ANG MAG AN MAG ANG MAG ANG 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.910 0.879 0.850 0.836 0.830 0.827 0.823 0.824 0.822 0.820 0.824 0.818 0.815 0.815 0.813 0.811 0.815 0.811 -88.000 -106.000 -129.000 -143.000 -153.000 -160.000 -165.000 -170.000 -174.000 -178.000 176.000 172.000 167.000 163.000 160.000 157.000 154.000 153.000 4.852 4.143 3.077 2.413 1.983 1.693 1.490 1.342 1.196 1.100 1.002 0.920 0.840 0.784 0.732 0.690 0.647 0.627 123.000 112.000 93.000 79.000 69.000 60.000 52.000 44.000 36.000 29.000 22.000 15.000 10.000 4.000 1.000 -5.000 -7.000 -11.000 0.057 0.065 0.070 0.075 0.077 0.082 0.081 0.086 0.091 0.100 0.108 0.117 0.129 0.146 0.160 0.187 0.207 0.241 48.000 41.000 34.000 32.000 30.000 33.000 34.000 38.000 42.000 45.000 45.000 48.000 48.000 49.000 50.000 48.000 48.000 45.000 0.286 0.274 0.267 0.281 0.303 0.331 0.368 0.406 0.443 0.484 0.524 0.554 0.584 0.601 0.623 0.631 0.635 0.638 -56.000 -68.000 -82.000 -92.000 -102.000 -108.000 -114.000 -120.000 -125.000 -130.000 -134.000 -137.000 -141.000 -144.000 -146.000 -151.000 -156.000 -162.000 K MAG1 0.240 0.323 0.496 0.629 0.751 0.809 0.914 0.892 0.904 0.827 0.739 0.719 0.671 0.588 0.534 0.454 0.437 0.369 19.300 18.044 16.430 15.075 14.108 13.148 12.647 11.933 11.187 10.414 9.674 8.956 8.137 7.300 6.604 5.670 4.949 4.153 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS +90˚ +120˚ +60˚ S21 2 GHZ +30˚ +150˚ S12 18 GHZ S22 18 GHZ ±180˚ S11 18 GHZ S11 2 GHZ S12 2 GHZ S21 18 GHZ S22 2 GHZ 0˚ -30˚ -150˚ -60˚ -120˚ -90˚ NE900275 VDS = 8 V, ID = 180 mA FREQUENCY S11 GHZ MAG 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.900 0.900 0.870 0.860 0.850 0.850 0.830 0.770 0.690 0.560 0.440 0.480 0.690 0.820 0.900 0.920 0.940 S21 ANG -123.000 -146.000 -161.000 -172.000 -180.000 172.000 162.000 151.000 135.000 108.000 56.000 -19.000 -69.000 -97.000 -115.000 -126.000 -136.000 MAG 3.670 2.760 2.140 1.820 1.610 1.510 1.500 1.520 1.600 1.770 1.880 1.770 1.480 1.110 0.860 0.650 0.540 S12 ANG 95.000 76.000 54.000 46.000 26.000 16.000 1.000 -12.000 -34.000 -51.000 -80.000 -116.000 -146.000 -175.000 162.000 141.000 127.000 S22 MAG ANG MAG ANG 0.060 0.060 0.060 0.060 0.060 0.060 0.060 0.070 0.080 0.090 0.100 0.090 0.070 0.050 0.040 0.040 0.050 24.000 15.000 3.000 3.000 1.000 -1.000 -3.000 -5.000 -16.000 -26.000 -51.000 -85.000 -121.000 -165.000 158.000 114.000 89.000 0.230 0.250 0.280 0.320 0.370 0.410 0.450 0.480 0.510 0.540 0.590 0.610 0.610 0.570 0.560 0.580 0.590 -97.000 -117.000 -131.000 -143.000 -152.000 -161.000 -170.000 -178.000 173.000 162.000 147.000 128.000 108.000 85.000 65.000 48.000 36.000 K MAG1 0.325 0.397 0.698 0.850 0.974 0.972 1.051 1.162 1.227 1.311 1.259 1.408 1.392 1.624 1.416 1.498 1.020 17.865 16.628 15.523 14.819 14.287 14.008 12.595 10.931 10.140 9.594 9.681 9.136 9.522 8.835 9.487 7.938 9.472 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -11/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE