DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3484 TO-251 (MP-3) 2SK3484-Z TO-252 (MP-3Z) designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 100 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±16 A ID(pulse) ±22 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Drain Current (pulse) Note1 Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 10 A Single Avalanche Energy Note2 EAS 10 mJ (TO-252) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 4.17 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 125 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15069EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3484 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 8 A 4.7 9.5 RDS(on)1 VGS = 10 V, ID = 8 A 100 125 mΩ RDS(on)2 VGS = 4.5 V, ID = 8 A 110 148 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S Input Capacitance Ciss VDS = 10 V 900 pF Output Capacitance Coss VGS = 0 V 110 pF Reverse Transfer Capacitance Crss f = 1 MHz 50 pF Turn-on Delay Time td(on) VDD = 50 V, ID = 8 A 9.0 ns VGS = 10 V 5.0 ns RG = 0 Ω 30 ns 4.0 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 80 V 20 nC Gate to Source Charge QGS VGS = 10 V 3.0 nC QGD ID = 16 A 5.0 nC VF(S-D) IF = 16 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 16 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 122 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed TEST CIRCUIT 2 SWITCHING TIME TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D15069EJ2V0DS td(on) tr ton td(off) tf toff 2SK3484 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 20 40 60 80 100 40 30 20 10 0 120 140 160 0 20 TC - Case Temperature - ˚C 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 µs 0 µs 1 iss rD we d Po mite Li m s 10 s m n tio ipa R (a DS( t V on) G Li S = mit 10 ed V) 10 10 10 ID(pulse) DC 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A ID(DC) Rth(ch-A) = 125˚C/W 100 10 Rth(ch-C) = 4.17˚C/W 1 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15069EJ2V0DS 3 2SK3484 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 25 ID - Drain Current - A ID - Drain Current - A 100 Pulsed VDS = 10 V 10 TA = −40˚C 25˚C 75˚C 150˚C 1 1 0.1 0.01 20 VGS =10 V 4.5 V 15 10 5 1 2 3 0 5 4 Pulsed 0 100 VDS = 10 V Pulsed 10 TA = 150˚C 75˚C 25˚C −40˚C 0.1 0.1 1 10 100 4 250 200 Pulsed 150 ID = 16 A 100 8A 50 0 5 10 150 VGS = 4.5 V 10 V 50 1 10 15 20 VGS - Gate to Source Voltage - V 4 200 0 0.1 4 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 100 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.01 0.01 2 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 1 1 100 VDS = 10 V ID = 1 mA 3 2 1 0 −50 ID - Drain Current - A 0 50 100 Tch - Channel Temperature - ˚C Data Sheet D15069EJ2V0DS 150 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 300 Pulsed ID = 8 A ISD - Diode Forward Current - A 200 VGS = 4.5 V 10 V 100 0 −50 50 0 100 10 VGS = 10 V 0V 1 0.1 0.01 150 Pulsed 0 Tch - Channel Temperature - ˚C 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1 MHz Ciss 1000 100 10 0.01 SWITCHING CHARACTERISTICS 1000 Coss 0.1 1 10 Crss 100 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 VDD = 50 V VGS = 10 V RG = 0 Ω tf 100 td(off) td(on) 10 tr 1 0.1 100 10 10 100 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS di/dt = 100 A/ µs VGS = 0 V 1 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 10 1 VDS - Drain to Source Voltage - V 1000 1.5 1 80 10 VDD = 80 V 50 V 20 V 8 VGS 60 6 40 4 20 2 VDS VGS - Gate to Drain Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3484 ID = 16 A 0 5 10 15 20 0 25 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D15069EJ2V0DS 5 2SK3484 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 10 IAS = 10 A EAS =1 0m J 1 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V 0.1 Startimg Tch = 25˚C 0.01 0.1 120 100 80 60 40 20 1 10 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C L - Inductive Load - mH 6 VDD = 50 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 10 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 Data Sheet D15069EJ2V0DS 2SK3484 PACKAGE DRAWINGS (Unit: mm) 2) TO-252 (MP-3Z) 1.1 ±0.2 +0.2 0.5 −0.1 +0.2 0.5 −0.1 0.75 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3 1.5 −0.1 2.3 ±0.2 1.0 MIN. 1.8TYP. 0.5 ±0.1 0.9 0.8 2.3 2.3 MAX. MAX. 0.8 1. Gate 2. Drain 3. Source 4. Fin (Drain) 0.7 0.8 4.3 MAX. 1.1 ±0.2 13.7 MIN. 3 7.0 MIN. 2 5.5 ±0.2 1.6 ±0.2 1 4 5.5 ±0.2 10.0 MAX. 6.5 ±0.2 5.0 ±0.2 0.5 ±0.1 4 +0.2 2.3 ±0.2 2.0 MIN. 5.0 ±0.2 1.5 −0.1 6.5 ±0.2 +0.2 1) TO-251 (MP-3) EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D15069EJ2V0DS 7 2SK3484 • The information in this document is current as of August, 2004. The information is subject to change without notice. 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