NEC UPA1750

µPA1750
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C, all terminals are connected.)
Symbol
Drain to Source On-state Resistance
RDS(on)1
Typ.
Max.
Unit
VGS = –10 V, ID = –1.8 A
0.065
0.090
Ω
RDS(on)2
VGS = –4 V, ID = –1.8 A
0.125
0.180
Ω
Gate to Source Cutoff Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
–1.7
–2.5
V
Forward Transfer Admittance
| yfs |
VDS = –10 V, ID = –1.8 A
2.0
4.4
Drain Leakage Current
IDSS
VDS = –20 V, VGS = 0
Gate to Source Leakage Current
IGSS
VGS = 20 V, VDS = 0
Input Capacitance
Ciss
VDS = –10 V
540
pF
Coss
VGS = 0
385
pF
105
pF
Min.
±
Output Capacitance
Test Conditions
f = 1 MHz
–10
µA
µA
10
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
ID = –1.8 A
10
ns
tr
VGS(on) = –10 V
110
ns
340
ns
230
ns
Rise Time
VDD = –10 V
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
ID = –3.5 A
18
nC
QGS
VDD = –16 V
2.0
nC
5.1
nC
Gate to Source Charge
RG = 10 Ω
VGS = –10 V
Gate to Drain Charge
QGD
Body Diode Forward Voltage
VF(S-D)
IF = 3.5 A, VGS = 0
0.8
V
Reverse Recovery Time
trr
IF = 3.5 A, VGS = 0
160
ns
Qrr
di/dt = 100 A/µs
310
nC
Reverse Recovery Charge
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
D.U.T.
RL
RG
RG = 10 Ω
PG.
VGS
VGS
Wave Form
0
VGS(on)
10 %
PG.
90 %
90 %
ID
VGS
0
ID
Wave Form
t
t = 1 µs
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
IG = 2 mA
RL
50 Ω
VDD
90 %
VDD
ID
2
S
±
Characteristics
td(off)
tf
toff
µ PA1750
PT - Total Power Dissipation - W
2.8
100
80
60
40
20
0
20
40
60
80
2.0
2 unit
1 unit
1.6
1.2
0.8
0.4
0
100 120 140 160
Mounted on ceramic
substrate of
2 000 mm 2 × 1.1 mm
2.4
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–100
IC - Drain Current - A
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on ceramic
substrate of 2 000 mm2 × 1.1 mm
1 unit
–10
1
ID(pulse)
d
ite )
im 0 V
L 1
–
n)
(o
=
DS GS
s
10
ID(DC)
R V
t
(a
m
m
s
10
0
we
–1
m
s
Po
DC
rD
iss
ipa
tio
n
–16
VGS = –10 V
–4 V
–12
–8
–4
Lim
ite
TA = 25 ˚C
Single Pulse
–0.1
–0.1
Pulsed
–20
ID - Drain Current - A
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
–1
–10
–100
VDS - Drain to Source Voltage - V
0
–5
–10
–15
–20
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
ID - Drain Current - A
–10
Pulsed
–1
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
–0.1
–0.01
VDS = –10 V
0
–2
–4
–6
–8
VGS - Gate to Source Voltage - V
3
µPA1750
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
1 000
100
10
1
0.1
0.01
0.001
10 µ
Mounted on ceramic
substrate of 2000 mm2 × 1.1 mm
Single Pulse , 1 unit
100 µ
1m
10 m
100 m
1
10
100
1 000
4
100
10
VDS= –10 V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1
0.1
–0.1
–1
–10
ID - Drain Current - A
–100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.3
Pulsed
0.2
Pulsed
0.3
0.2
VGS = –4.0 V
0.1
0
VGS = –10 V
–1
–10
ID - Drain Current - A
–100
ID = –1.8 A
0.1
–5
0
–15
–10
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
RDS(on) - Drain to Source On-State Resistance - Ω
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-State Resistance - Ω
PW - Pulse Width - s
VDS = –10 V
ID = –1 mA
–2.0
–1.5
–1.0
–0.5
0
–50
0
50
100
150
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-State Resistance - Ω
µ PA1750
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
ISD - Diode Forward Current - A
Pulsed
0.20
VGS = –4 V
0.15
0.10
–10 V
0.05
–100
VGS = –10 V
–10
–4 V
VGS = 0
–1
–0.1
ID = –1.8 A
–50
50
0
100
150
0
Tch - Channel Temperature - ˚C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
VGS = 0
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10 000
1 000
Ciss
Coss
100
Crss
10
–0.1
–1
–10
tf
100
td(on)
10
1
–0.1
–100
100
10
–10
IF - Diode Current - A
–100
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/µs
VGS = 0
–1
VDD = –10 V
VGS(on) = –10 V
RG = 10 Ω
–10
–100
–1
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
BODY DIODE CURRENT
1
–0.1
tr
td(off)
VDS - Drain to Source Voltage - V
1 000
–1.5
–1.0
–0.5
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
–16
–40
ID = –1.8 A
–30 VDD = –16 V
–10 V
–4 V
–12
VGS
–20
–8
–10
–4
VDS
0
10
20
30
40
QG - Gate Charge - nC
5
0
VGS - Gate to Source Voltage - V
0
µPA1750
REFERENCE
Document Name
6
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Semiconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
Power MOS FET features and application switching power supply
TEA-1034
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
µ PA1750
[MEMO]
7
µPA1750
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
8