µPA1750 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C, all terminals are connected.) Symbol Drain to Source On-state Resistance RDS(on)1 Typ. Max. Unit VGS = –10 V, ID = –1.8 A 0.065 0.090 Ω RDS(on)2 VGS = –4 V, ID = –1.8 A 0.125 0.180 Ω Gate to Source Cutoff Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.0 –1.7 –2.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –1.8 A 2.0 4.4 Drain Leakage Current IDSS VDS = –20 V, VGS = 0 Gate to Source Leakage Current IGSS VGS = 20 V, VDS = 0 Input Capacitance Ciss VDS = –10 V 540 pF Coss VGS = 0 385 pF 105 pF Min. ± Output Capacitance Test Conditions f = 1 MHz –10 µA µA 10 Reverse Transfer Capacitance Crss Turn-On Delay Time td(on) ID = –1.8 A 10 ns tr VGS(on) = –10 V 110 ns 340 ns 230 ns Rise Time VDD = –10 V Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG ID = –3.5 A 18 nC QGS VDD = –16 V 2.0 nC 5.1 nC Gate to Source Charge RG = 10 Ω VGS = –10 V Gate to Drain Charge QGD Body Diode Forward Voltage VF(S-D) IF = 3.5 A, VGS = 0 0.8 V Reverse Recovery Time trr IF = 3.5 A, VGS = 0 160 ns Qrr di/dt = 100 A/µs 310 nC Reverse Recovery Charge Test Circuit 1 Switching Time Test Circuit 2 Gate Charge D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 VGS(on) 10 % PG. 90 % 90 % ID VGS 0 ID Wave Form t t = 1 µs Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % VDD ID 2 S ± Characteristics td(off) tf toff µ PA1750 PT - Total Power Dissipation - W 2.8 100 80 60 40 20 0 20 40 60 80 2.0 2 unit 1 unit 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 2 000 mm 2 × 1.1 mm 2.4 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –100 IC - Drain Current - A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on ceramic substrate of 2 000 mm2 × 1.1 mm 1 unit –10 1 ID(pulse) d ite ) im 0 V L 1 – n) (o = DS GS s 10 ID(DC) R V t (a m m s 10 0 we –1 m s Po DC rD iss ipa tio n –16 VGS = –10 V –4 V –12 –8 –4 Lim ite TA = 25 ˚C Single Pulse –0.1 –0.1 Pulsed –20 ID - Drain Current - A dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA d –1 –10 –100 VDS - Drain to Source Voltage - V 0 –5 –10 –15 –20 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A –10 Pulsed –1 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C –0.1 –0.01 VDS = –10 V 0 –2 –4 –6 –8 VGS - Gate to Source Voltage - V 3 µPA1750 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 100 10 1 0.1 0.01 0.001 10 µ Mounted on ceramic substrate of 2000 mm2 × 1.1 mm Single Pulse , 1 unit 100 µ 1m 10 m 100 m 1 10 100 1 000 4 100 10 VDS= –10 V Pulsed TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 –0.1 –1 –10 ID - Drain Current - A –100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0.3 Pulsed 0.2 Pulsed 0.3 0.2 VGS = –4.0 V 0.1 0 VGS = –10 V –1 –10 ID - Drain Current - A –100 ID = –1.8 A 0.1 –5 0 –15 –10 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cutoff Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω PW - Pulse Width - s VDS = –10 V ID = –1 mA –2.0 –1.5 –1.0 –0.5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - Ω µ PA1750 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ISD - Diode Forward Current - A Pulsed 0.20 VGS = –4 V 0.15 0.10 –10 V 0.05 –100 VGS = –10 V –10 –4 V VGS = 0 –1 –0.1 ID = –1.8 A –50 50 0 100 150 0 Tch - Channel Temperature - ˚C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 VGS = 0 f = 1 MHz td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 1 000 Ciss Coss 100 Crss 10 –0.1 –1 –10 tf 100 td(on) 10 1 –0.1 –100 100 10 –10 IF - Diode Current - A –100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 –1 VDD = –10 V VGS(on) = –10 V RG = 10 Ω –10 –100 –1 ID - Drain Current - A REVERSE RECOVERY TIME vs. BODY DIODE CURRENT 1 –0.1 tr td(off) VDS - Drain to Source Voltage - V 1 000 –1.5 –1.0 –0.5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS –16 –40 ID = –1.8 A –30 VDD = –16 V –10 V –4 V –12 VGS –20 –8 –10 –4 VDS 0 10 20 30 40 QG - Gate Charge - nC 5 0 VGS - Gate to Source Voltage - V 0 µPA1750 REFERENCE Document Name 6 Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Semiconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E Power MOS FET features and application switching power supply TEA-1034 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037 µ PA1750 [MEMO] 7 µPA1750 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 8