NEC UPA1703

DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
µPA1703
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DIMENSIONS
This product is N-Channel MOS Field Effect Transis-
(in millimeter)
tor designed for power management applications of
notebook computers.
8
5
FEATURES
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
• Super Low On-Resistance
RDS(on)1 = 10.5 mΩ
MAX. (VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 17 mΩ
MAX. (VGS = 4 V, ID = 5.0 A)
Ciss = 2180 pF TYP.
1
0.05 MIN.
(Power SOP8)
4.4
5.37 MAX.
0.8
+0.10
–0.05
• Small and Surface Mount Package
6.0 ±0.3
4
0.15
1.8 MAX.
• Built-in G-S Protection Diode
1.44
• Low Ciss
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, all terminals are connected)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±10
A
ID(pulse)
±40
A
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to
°C
Drain Current (pulse)
Notes1
Total Power Dissipation (TA = 25 °C)
Notes2
+150
Notes 1.
2.
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
PW ≤ 10 µs, Duty Cycle ≤ 1 %
Mounted on ceramic substrate of 1200 mm2 × 0.7 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated
voltage may be applied to this device.
Document No. D11494EJ1V0DS00 (1st edition)
Date Published December 1996 N
Printed in Japan
©
1996
µPA1703
ELECTRICAL CHARACTERISTICS (TA = 25 °C, all terminals are connected)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source
On-state Resistance
RDS(on)1
VGS = 10 V, ID = 5.0 A
8.5
10.5
mΩ
RDS(on)2
VGS = 4 V, ID = 5.0 A
12
17
mΩ
Gate to Source Cutoff Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
1.0
1.6
2.0
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 5.0 A
8.0
18
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±20 V, VDS = 0
±10
µA
Input Capacitance
Ciss
VDS = 10 V
2180
pF
Output Capacitance
Coss
VGS = 0
890
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
370
pF
Turn-On Delay Time
td(on)
ID = 5.0 A
25
ns
Rise Time
tr
VGS(on) = 10 V
210
ns
Turn-Off Delay Time
td(off)
VDD = 15 V
120
ns
Fall Time
tf
RG = 10 Ω
75
ns
Total Gate Charge
QG
ID = 10 A
40
nC
Gate to Source Charge
QGS
VDD = 24 V
5.6
nC
Gate to Drain Charge
QGD
VGS = 10 V
9.6
nC
Body Diode Forward Voltage
VF(S-D)
IF = 10 A, VGS = 0
0.73
V
Reverse Recovery Time
trr
IF = 10 A, VGS = 0
46
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
45
nC
Test Circuit 1 Switching Time
Test Circuit 2 Gate Charge
D.U.T.
D.U.T.
VGS
RL
VGS
RG
RG = 10 Ω
PG.
Wave Form
0
PG.
VDD
I
D
Wave Form
90 %
90 %
t = 1 µs
Duty Cycle ≤ 1 %
10 %
0 10 %
tr
td(on)
ton
IG = 2 mA
RL
50 Ω
VDD
90 %
ID
t
2
VGS(on)
10 %
ID
VGS
0
S
td(off)
tf
toff
µPA1703
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
20
40
60
80
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
Mounted on ceramic
substrate of
1 200 mm2 × 0.7 mm
2.4
TA - Ambient Temperature - °C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
)
on
R t VG
(a
Note:
Mounted on ceramic substrate of 1 200 mm2 × 0.7 mm
ID(pulse)
1
m
s
ID(DC)
10
10
m
s
10
0
m
s
Po
we
1
DC
rD
iss
ipa
tio
n
0.1
0.1
Lim
ite
TA = 25 °C
Single Pulse
d
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
(
DS
d
ite V)
Lim 10
=
S
100
10
1
0.1
Mounted on ceramic
substrate of
1 200 mm2 × 0.7 mm
Single Pulse
Channel to Ambient
0.01
0.001
10 µ
100 µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
3
µPA1703
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
50
10
Tch = –25 °C
25 °C
75 °C
125 °C
1
0.1
4
2
6
30
0
8
1
0.1
10
1
100
RDS(on) - Drain to Source On-State Resistance - mΩ
ID - Drain Current - A
4
RDS(on) - Drain to Source On-State Resistance - mΩ
VDS = 10 V
Pulsed
Pulsed
30
20
VGS = 4 V
10
VGS = 10 V
0
1
10
ID - Drain Current - A
0.8
0.6
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
Pulsed
20
ID = 5.0 A
10
0
100
5
10
15
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cutoff Voltage - V
| yfs | - Forward Transfer Admittance - S
10
0.4
0.2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Tch = –25 °C
25 °C
75 °C
125 °C
4V
20
VGS - Gate to Source Voltage - V
100
VGS = 10 V
10
VDS = 10 V
0
40
VDS = 10 V
ID = 1 mA
2.0
1.5
1.0
0.5
0
–50
0
50
100
150
Tch - Channel Temperature - °C
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Pulsed
20
ISD - Diode Forward Current - A
VGS = 4 V
15
10
10 V
5
100
VGS = 4 V
VGS = 0
10
1
0.1
ID = 5.0 A
0
–50
0
50
100
0
150
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
10 000
VGS = 0
f = 1 MHz
Ciss
1 000
Coss
Crss
100
10
0.1
1
10
1 000
tr
td(off)
100
tf
td(on)
10
1
0.1
100
VDS - Drain to Source Voltage - V
10
10
IF - Diode Current - A
100
40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 100 A/µ s
VGS = 0
1
1
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
1
0.1
VDD = 15 V
VGS(on) = 10 V
RG = 10 Ω
10
100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
1.5
1.0
0.5
VSD - Source to Drain Voltage - V
ID = 10 A
14
30
12
10
20
VGS
VDD = 24 V
15 V
6V
8
6
4
10
2
VDS
0
10
20
30
40
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-State Resistance - mΩ
µPA1703
0
QG - Gate Charge - nC
5
µPA1703
REFERENCE
Document Name
6
Document No.
NEC semiconductor device reliability/quality control system
C11745E
Quality grade on NEC semiconductor devices
C11531E
Semiconductor device mounting technology manual
C10535E
Semiconductor device package manual
C10943X
Guide to quality assurance for semiconductor devices
MEI-1202
Application circuits using Power MOS FET
TEA-1035
Safe operating area of Power MOS FET
TEA-1037
µPA1703
[MEMO]
7
µPA1703
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5