DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain application of notebook computers. FEATURES • Super low on-state resistance • Low Ciss : Ciss = 750 pF TYP. 6.0 ±0.3 4 4.4 0.8 +0.10 –0.05 5.37 Max. 0.15 1.8 Max. RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) 1.44 1 RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) 0.05 Min. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.27 0.40 0.5 ±0.2 0.10 0.78 Max. +0.10 –0.05 0.12 M ORDERING INFORMATION PART NUMBER PACKAGE µPA1705G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) VDSS 30 V Gate to Source Voltage (VDS = 0) VGSS ±25 V Drain Current (DC) ID(DC) ±8 A ID(pulse) ±50 A PT 2.0 W Tch 150 °C Drain Current (Pulse) Note1 Total Power Dissipation (TA = 25 °C) Note2 Channel Temperature EQUIVALENT CIRCUIT Drain Body Diode Gate Storage Temperature Tstg –55 to + 150 Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 1.7 mm Remark °C Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G12712EJ1V0DS00 (1st edition) Date Published February 1999 NS CP(K) Printed in Japan © 1998, 1999 µPA1705 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 4.0 A 19 27 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.0 A 30 40 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.0 A 4.0 8.4 Drain Leakage Current IDSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 750 pF Output Capacitance Coss VGS = 0 V 350 pF Reverse Transfer Capacitance Crss f = 1 MHz 160 pF Turn-on Delay Time td(on) ID = 4.0 A 19 ns VGS(on) = 10 V 107 ns td(off) VDD = 15 V 50 ns tf RG = 10 Ω 32 ns Total Gate Charge QG ID = 8.0 A 19 nC Gate to Source Charge QGS VDD = 24 V 2.4 nC Gate to Drain Charge QGD VGS = 10 V 6.3 nC VF(S-D) IF = 8.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr If = 8.0 A, VGS = 0 V 33 ns Reverse Recovery Charge Qrr di/dt = 100A/µs 22 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time Fall Time Body Diode Forward Voltage TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL V PG. RG RG = 10 Ω GS Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t t = 1µ s Duty Cycle ≤ 1 % 2 S 0 10 % 10 % tr td (on) ton td (off) tf toff Data Sheet G12712EJ1V0DS00 50 Ω RL VDD µPA1705 TYPICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm2 × 1.7 mm 2.4 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) = 50 A Remark Mounted on ceramic substrate of 2000 mm2 × 1.7 mm d ite 10 V) ) 10 on S( S = RD t VG (a ID(DC) = 1 m s 8A 10 m s 10 0 m s Po we 1 r D DC iss ipa tio n Lim ite d TA = 25 ˚C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A Lim 100 10 1 0.1 Mounted on ceramic substrate of 1200 mm 2 to 1.7 mm Single Pulse Channel to Ambient 0.01 0.001 100 µ 1m 10 m 100 m 1 10 100 1000 10 000 PW - Pulse Width - s Data Sheet G12712EJ1V0DS00 3 µPA1705 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Pulsed ID - Drain Current - A ID - Drain Current - A 20 10 TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C 1 VGS = 10 V VGS = 4.5 V 10 0.1 0.01 0 VDS = 10 V 4 2 6 0 8 VGS - Gate to Source Voltage - V TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C 0.1 10 1 100 RDS(on) - Drain to Source On-State Resistance - mΩ ID - Drain Current - A 4 RDS(on) - Drain to Source On-State Resistance - mΩ 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 150 ID = 4 A 100 50 0 Pulsed 60 50 VGS = 4.5 V 30 20 VGS=10 V 10 0 1 10 10 15 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 70 40 5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS(off) - Gate to Source Cutoff Voltage - V | yfs | - Forward Transfer Admittance - S VDS = 10 V Pulsed 1 0.8 0.6 VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.4 0.2 VGS = 0 V IF = 8 A 2.0 1.0 0 –20 0 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet G12712EJ1V0DS00 µPA1705 RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 40 ISD - Diode Forward Current - A 50 VGS = 4.5 V 30 VGS = 10 V 20 100 10 VGS = 0 V 1 0.1 10 0 ID = 4 A 0 –20 0 0.5 1.5 1.0 VSD - Source to Drain Voltage - V 20 40 60 80 100 120 140 160 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VDS = 10 V VGS = 0 V f = 1 MHz 1 000 Ciss Coss 10 0.1 Crss 1 10 100 tr 100 td(off) tf td(on) 10 1 0.1 1 VGS - Drain to Source Voltage - V ID - Drain Current - A DYNAMIC INPUT/OUTPUT CHARACTERISTICS REVERSE RECOVERY TIME vs. DRAIN CURRENT di/dt = 100 A/ µs VGS = 0 100 10 1 0.1 40 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1 000 1 10 VDD = 15 V VGS(on) = 10 V RG = 10 Ω 10 100 100 ID = 8 A 14 30 20 12 10 VGS VDD = 24 V 15 V 6V 8 6 4 10 2 VDS 0 IF - Diode Current - A 5 10 15 20 VGS - Gate to Source Voltage - V 100 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 1 000 0 0 QG - Gate Charge - nC Data Sheet G12712EJ1V0DS00 5 µPA1705 [MEMO] 6 Data Sheet G12712EJ1V0DS00 µPA1705 [MEMO] Data Sheet G12712EJ1V0DS00 7 µPA1705 • The information in this document is subject to change without notice. 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