NEC UPA1705G

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1705
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC Converters and power management
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
application of notebook computers.
FEATURES
• Super low on-state resistance
• Low Ciss : Ciss = 750 pF TYP.
6.0 ±0.3
4
4.4
0.8
+0.10
–0.05
5.37 Max.
0.15
1.8 Max.
RDS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
1.44
1
RDS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A)
0.05 Min.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
1.27
0.40
0.5 ±0.2
0.10
0.78 Max.
+0.10
–0.05
0.12 M
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1705G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±25
V
Drain Current (DC)
ID(DC)
±8
A
ID(pulse)
±50
A
PT
2.0
W
Tch
150
°C
Drain Current (Pulse)
Note1
Total Power Dissipation (TA = 25 °C)
Note2
Channel Temperature
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Storage Temperature
Tstg
–55 to + 150
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2
2. Mounted on ceramic substrate of 1200 mm x 1.7 mm
Remark
°C
Gate
Protection
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
Exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G12712EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1998, 1999
µPA1705
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
Drain to Source On-state Resistance
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
RDS(on)1
VGS = 10 V, ID = 4.0 A
19
27
mΩ
RDS(on)2
VGS = 4.5 V, ID = 4.0 A
30
40
mΩ
VGS(off)
VDS = 10 V, ID = 1 mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| yfs |
VDS = 10 V, ID = 4.0 A
4.0
8.4
Drain Leakage Current
IDSS
VDS = 30 V, VGS = 0 V
10
µA
Gate to Source Leakage Current
IGSS
VGS = ±25 V, VDS = 0 V
±10
µA
Input Capacitance
Ciss
VDS = 10 V
750
pF
Output Capacitance
Coss
VGS = 0 V
350
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
pF
Turn-on Delay Time
td(on)
ID = 4.0 A
19
ns
VGS(on) = 10 V
107
ns
td(off)
VDD = 15 V
50
ns
tf
RG = 10 Ω
32
ns
Total Gate Charge
QG
ID = 8.0 A
19
nC
Gate to Source Charge
QGS
VDD = 24 V
2.4
nC
Gate to Drain Charge
QGD
VGS = 10 V
6.3
nC
VF(S-D)
IF = 8.0 A, VGS = 0 V
0.8
V
Reverse Recovery Time
trr
If = 8.0 A, VGS = 0 V
33
ns
Reverse Recovery Charge
Qrr
di/dt = 100A/µs
22
nC
Gate to Source Cut-off Voltage
Rise Time
tr
Turn-off Delay Time
Fall Time
Body Diode Forward Voltage
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
IG = 2 mA
D.U.T.
VGS
RL
V
PG.
RG
RG = 10 Ω
GS
Wave Form
0
VGS (on)
10 %
90 %
PG.
VDD
90 %
ID
90 %
ID
VGS
0
I
D
Wave Form
t
t = 1µ s
Duty Cycle ≤ 1 %
2
S
0
10 %
10 %
tr
td (on)
ton
td (off)
tf
toff
Data Sheet G12712EJ1V0DS00
50 Ω
RL
VDD
µPA1705
TYPICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
100
80
60
40
20
0
20
40
60
80
2.0
1.6
1.2
0.8
0.4
0
100 120 140 160
Mounted on ceramic
substrate of
1200 mm2 × 1.7 mm
2.4
TA - Ambient Temperature - ˚C
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse) = 50 A
Remark
Mounted on ceramic substrate of 2000 mm2 × 1.7 mm
d
ite
10
V)
)
10
on
S( S =
RD t VG
(a
ID(DC) =
1
m
s
8A
10
m
s
10
0
m
s
Po
we
1
r D DC
iss
ipa
tio
n
Lim
ite
d
TA = 25 ˚C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000
rth(t) - Transient Thermal Resistance - ˚C/W
ID - Drain Current - A
Lim
100
10
1
0.1
Mounted on ceramic
substrate of
1200 mm 2 to 1.7 mm
Single Pulse
Channel to Ambient
0.01
0.001
100 µ
1m
10 m
100 m
1
10
100
1000
10 000
PW - Pulse Width - s
Data Sheet G12712EJ1V0DS00
3
µPA1705
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
100
Pulsed
Pulsed
ID - Drain Current - A
ID - Drain Current - A
20
10
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
1
VGS = 10 V
VGS = 4.5 V
10
0.1
0.01
0
VDS = 10 V
4
2
6
0
8
VGS - Gate to Source Voltage - V
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
0.1
10
1
100
RDS(on) - Drain to Source On-State Resistance - mΩ
ID - Drain Current - A
4
RDS(on) - Drain to Source On-State Resistance - mΩ
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Pulsed
150
ID = 4 A
100
50
0
Pulsed
60
50
VGS = 4.5 V
30
20
VGS=10 V
10
0
1
10
10
15
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
70
40
5
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
VGS(off) - Gate to Source Cutoff Voltage - V
| yfs | - Forward Transfer Admittance - S
VDS = 10 V
Pulsed
1
0.8
0.6
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
0.4
0.2
VGS = 0 V
IF = 8 A
2.0
1.0
0
–20 0
20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
ID - Drain Current - A
Data Sheet G12712EJ1V0DS00
µPA1705
RDS(on) - Drain to Source On-State Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
40
ISD - Diode Forward Current - A
50
VGS = 4.5 V
30
VGS = 10 V
20
100
10
VGS = 0 V
1
0.1
10
0
ID = 4 A
0
–20
0
0.5
1.5
1.0
VSD - Source to Drain Voltage - V
20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
VDS = 10 V
VGS = 0 V
f = 1 MHz
1 000
Ciss
Coss
10
0.1
Crss
1
10
100
tr
100
td(off)
tf
td(on)
10
1
0.1
1
VGS - Drain to Source Voltage - V
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ µs
VGS = 0
100
10
1
0.1
40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
1 000
1
10
VDD = 15 V
VGS(on) = 10 V
RG = 10 Ω
10
100
100
ID = 8 A
14
30
20
12
10
VGS
VDD = 24 V
15 V
6V
8
6
4
10
2
VDS
0
IF - Diode Current - A
5
10
15
20
VGS - Gate to Source Voltage - V
100
1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1 000 0
0
QG - Gate Charge - nC
Data Sheet G12712EJ1V0DS00
5
µPA1705
[MEMO]
6
Data Sheet G12712EJ1V0DS00
µPA1705
[MEMO]
Data Sheet G12712EJ1V0DS00
7
µPA1705
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
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parties arising from the use of these circuits, software, and information.
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the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
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"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
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before using it in a particular application.
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
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M7 98. 8