NJL6201R-1 HIGH SPEED PIN PHOTO DIODE OUTLINE (typ.) Unit : mm GENERAL DESCRIPTION Active area: 0.7X0.7mm The NJL6201R-1 is the high speed PIN photo-diode that attained the short tail performance and the fast 1.16 ±0.15 1.8 ±0.15 0.9 ±0.15 monitor of optical storage devices. 0.5 ±0.15 1.0 0.3 response (tr/tf) required of the laser diode power 0.3 FEATURES 0.95 0.3 0.95 • Short tail performance • Fast rise-time/fall-time 5ns at1-99%, VR=2.5V,λ=780nm/650nm • High speed 300MHz at λ=780nm 300MHz at λ=650nm • Miniature, thin type 1.8mmX3.6mmX1.16mm 3.6 ±0.15 1.8 ±0.15 ACTIVE AREA (2 1.0 × )R 0. 3 anode cathode APPLICATIONS • Front laser power monitor for CD-R/RW, DVD+/-R/RW/-RAM, recordable MD etc. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Reverse Voltage Operating Temperature Storage Temperature Reflow Soldering Temperature SYMBOL VR Topr Tstg Tsol RATINGS 35 -30 to +85 -40 to +100 260 UNIT V °C °C °C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER Dark Current Forward Voltage Capacitance Peak Wavelength Sensitivity SYMBOL ID VF Ct λP S Rise time/Fall time tr/tf Cut off Frequency fc Ver.2005-01-20 TEST CONDITION VR=10V IF=1mA VR=2.5V, f=1MHz — VR=2.5V, λ=780nm VR=2.5V, λ=650nm VR=2.5V, λ=780nm, 1-99% VR=2.5V, λ=650nm, 1-99% VR=2.5V, λ=780nm, RL=50Ω, -3dB VR=2.5V, λ=650nm, RL=50Ω, -3dB MIN — — — — 0.38 0.32 — — — — TYP 0.1 — 8 800 0.47 0.37 5 5 300 300 MAX 2.0 1.0 — — — — — — — — UNIT nA V pF nm A/W A/W ns ns MHz MHz -1- NJL6201R-1 TYPICAL CHARACTERISTICS Light Current vs. Illuminance (Ta=25°C) Spectral Response (Ta=25°C) 1.00E-02 100 90 VR=2.5V, λ=650nm 1.00E-03 80 70 Relative Sensitivity (%) Light Current IL(A) 1.00E-04 1.00E-05 1.00E-06 60 50 40 30 20 1.00E-07 10 0 1.00E-08 0.01 0.1 1 10 100 500 600 700 2 800 900 1000 1100 Wav elength λ(nm) Illuminance (mW/cm ) Dark Current vs. Temperature Relative Sensitivity vs. Temperature 1.00E-08 110% 108% VR=2.5V 1.00E-09 106% Relative Sensitivity (%) Dark Current ID(A) 104% 1.00E-10 1.00E-11 102% 100% 98% 96% 1.00E-12 VR=2.5V, λ=650nm 94% 92% 1.00E-13 -40 -20 0 20 40 60 80 90% 100 -40 Ambient Temperature Ta(℃) -20 0 20 40 60 80 100 Ambient Temperature Ta( ℃) Rise Time vs. Reverse Voltage (Ta=25°C) Fall Time vs. Reverse Voltage (Ta=25°C) 15 15 1-99%, λ=650nm, RL=50Ω 1-99%, λ=650nm, RL=50Ω 10 Fall Time tr (ns) Rise Time tr (ns) 10 5 5 0 0 0 1 2 3 Reverse Voltage VR(V) -2- 4 5 0 1 2 3 4 5 Reverse Voltage VR(V) Ver.2005-01-20 NJL6201R-1 Relative Sensitivity vs. Frequency (Ta=25°C) Capacitance vs. Reverse Voltage (Ta=25°C) 13 0 12 -1 Capasitance Cj (pF) Relative Sensitivity (dB) 11 -2 -3 10 9 -4 8 VR=2.5V, λ=650nm, RL=50Ω -5 7 6 -6 1 10 100 0 1000 1 2 3 4 5 Reverse Voltage VR(V) Frequency f(MHz) MEASURING CIRCUIT FOR RESPONSE TIME Oscilloscope Pulse Generator Input 50Ω Laser 99% NJL6201R-1 Output 1% tr Ver.2005-01-20 tf -3- NJL6201R-1 PRECAUTION FOR HANDLING 1. Soldering to actual circuit board Soldering condition - Heated condition of plastic package. Lower than 260 °C of maximum surface temperature Soldering Method 1) Reflow Method Recommended temperature profile of its method. Soldering to be done within twice under this condition. f 260°C e 230°C 220°C d 180°C 150°C a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220°C or higher time e : 230°C or higher time f : Peak temperature : 1 to 4°C/s : 150 to 180°C : 60 to 120s : 1 to 4°C /s : Shorter than 60s : Shorter than 40s g : Temperature ramping rate : 1 to 6°C /s : Lower than 260°C The temperature indicates at the surface of mold package Room Temp. a b c g 2) Reflow Method (In case of infrared heating) - Temperature profile : Same to the above - Avoid direct irradiation to the plastic package because it is mold resin, absorbs the Infrared Radiation and its surface temperature will be higher than lead itself. 3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method ( VPS). If the device is heated to high temperature and kept in its condition for longer time, it would affect to its reliability. It is necessary to solder in short time as soon as possible. 2. Cleaning Avoid washing of the device after soldering by reflow method. 3. Attention in handling 1) Treat not to touch the lens surface. 2) Avoid dust and any other foreign materials (paint, bonding material, etc.) on the lens surface. 4. Storage In order to prevent from degradation of this device in moisturing at reflow method, so that this device is contained in deaeration packaging. So that mount the device as short as possible after opening the envelope. -4- Ver.2005-01-20 NJL6201R-1 NJL6201R-1 Taping Specification 1. Taping Size 1) Carrier tape is used with Styrene type Carbonated Plastic. 2) Cover tape is used with electro statistically prevention treated Polyester type tape. 3) Product taping direction is to place the index mark against the pull out direction of the tape as in the drawing. Pull out direction of tape 4.0 φ1.5 0.3 12.0 4.2 5.5 1.75 2.0 Unit:mm 2.4 4.0 1.5 Carrier tape Cover tape 2. Taping Strength Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15°, and the peeling-off strength is to be within the power of 20 to 70g. 3. Packaging 1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start Rolling : Carrier tape open space more than Unit: mm 20 Pieces. 2-2) End of Rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. Label 13 Ver.2005-01-20 φ180 silica gel (3 bags). φ60 4) Seal off after putting each reels in a dampproof bag with φ13 3) Taping quantity : 2,000 Pieces -5- NJL6201R-1 MEMO [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. -6- Ver.2005-01-20