NTE76 Silicon NPN Transistor Broadband CATV Amplifier Description: The NTE76 is an NPN transistor in a TO117 type case designed to be utilized in broadband linear amplifier circuitry such as CATV trunk, bridger, and line extender amplifiers. Features: D High Gain−Bandwidth Product: fT = 1.5GHz D Low Intermodulation, Low Cross−Modulation Distortion: X−MOD = −50dB D Low Noise Figure: NF = 2.7dB D High Power Gain: GVE = 10dB Absolute Maximum Ratings: (TC = +25°C) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +35°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0, Note 1 30 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 50 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 5 − − V − − 0.1 mA Collector Cutoff Current ICEO Note 1. Pulsed through 25mH Inductor. VCE =, 20V, IB = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 20V, IC = 70mA 30 − 300 Collector Output Capacitance Cob VCB = 30V, IE = 0, f = 1MHz − 2.6 4.0 pF Collector Input Capacitance Cib VEB = 0.5V, IC = 0, f = 1MHz − 8.0 10 pF Dynamic Characteristics Functional Test Noise Figure Narrow Band NFNB VCE = 10V, IC = 10mA, f = 200MHz − 2.7 − dB Broad Band NFBB VCE = 22V, IC = 70mA, f = 216MHz − 7.5 9.0 dB GVE VCE = 22V, IC = 70mA, f = 260MHz 10 11 − dB X−MOD VCE = 22V, IC = 70mA, PO = +50dBmV, Note 2 − −53 −50 dB − −55 −50 dB Power Gain at Optimum Noise Figure Cross−Modulation 2nd O Second Order Distortion VCE = 22V, IC = 70mA, PO = +50dBmV, Note 3 Note 2. 12 Channel Flat −− NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW Note 3. Channel 2 and Channel G Intermod Product on Channel 13 Collector .500 (12.7) Min 45° Emitter Emitter .034 (0.88) Max Base .210 (5.33) Max .460 (11.68) Max .290 (7.36) Dia Max .017 (0.45) Max .140 (3.55) Max 8−32 UNC−2A .260 (6.60) Max