MCR100 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. http://onsemi.com SCRs 0.8 A RMS 100 thru 600 V Features • Sensitive Gate Allows Triggering by Microcontrollers and Other • • • • • • • Logic Circuits Blocking Voltage to 600 V On−State Current Rating of 0.8 A RMS at 80°C High Surge Current Capability − 10 A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dV/dt − 20 V/msec Minimum at 110°C Glass-Passivated Surface for Reliability and Uniformity Pb−Free Packages are Available* G A K TO−92 CASE 29 STYLE 10 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MCR 100−x AYWWG G x A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 Cathode 2 Gate 3 Anode ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 7 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR100/D MCR100 Series MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Notes 1 and 2) (TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open) Value Unit VDRM, VRRM V 100 200 400 600 MCR100−3 MCR100−4 MCR100−6 MCR100−8 On-State RMS Current, (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A ITSM 10 A I2t 0.415 A2s PGM 0.1 W PG(AV) 0.10 W Forward Peak Gate Current, (TA = 25°C, Pulse Width v 1.0 ms) IGM 1.0 A Reverse Peak Gate Voltage, (TA = 25°C, Pulse Width v 1.0 ms) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 °C Storage Temperature Range Tstg −40 to 150 °C Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) Circuit Fusing Consideration, (t = 8.3 ms) Forward Peak Gate Power, (TA = 25°C, Pulse Width v 1.0 ms) Forward Average Gate Power, (TA = 25°C, t = 8.3 ms) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. See ordering information for exact device number options. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RqJC RqJA 75 200 °C/W TL 260 °C Thermal Resistance,Junction−to−Case Junction−to−Ambient Lead Solder Temperature (t1/16″ from case, 10 secs max) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Peak Repetitive Forward or Reverse Blocking Current (Note 2) TC = 25°C (VD = Rated VDRM and VRRM; RGK = 1 kW) TC = 110°C IDRM, IRRM Unit − − − − 10 100 VTM − − 1.7 V OFF CHARACTERISTICS mA ON CHARACTERISTICS Peak Forward On−State Voltage* (ITM = 1.0 A Peak @ TA = 25°C) Gate Trigger Current (Continuous dc) (Note 3) (VAK = 7.0 Vdc, RL = 100 W) TC = 25°C IGT − 40 200 mA Holding Current (2) (VAK = 7.0 Vdc, Initiating Current = 20 mA) TC = 25°C TC = −40°C IH − − 0.5 − 5.0 10 mA Latch Current (VAK = 7.0 V, Ig = 200 mA) TC = 25°C TC = −40°C IL − − 0.6 − 10 15 mA Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 7.0 Vdc, RL = 100 W) TC = −40°C TC = 25°C VGT − − 0.62 − 0.8 1.2 V Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 W,TJ = 110°C) dV/dt 20 35 − V/ms Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA) di/dt − − 50 A/ms DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 3. RGK = 1000 W included in measurement. 4. Does not include RGK in measurement. http://onsemi.com 2 MCR100 Series Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) 100 1.0 90 0.9 GATE TRIGGER VOLTAGE (VOLTS) GATE TRIGGER CURRENT (m A) Anode − 80 70 60 50 40 30 20 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 0.8 0.7 0.6 0.5 0.4 0.3 0.2 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 Figure 1. Typical Gate Trigger Current versus Junction Temperature 95 110 Figure 2. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 3 MCR100 Series 1000 LATCHING CURRENT (m A) HOLDING CURRENT (m A) 1000 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 100 10 −40 −25 −10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 110 120 110 100 90 DC 80 70 180° 60 50 40 30° 0 60° 90° 120° 0.1 0.2 0.3 0.4 IT(RMS), RMS ON-STATE CURRENT (AMPS) 110 Figure 4. Typical Latching Current versus Junction Temperature 0.5 I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) Figure 3. Typical Holding Current versus Junction Temperature 95 10 MAXIMUM @ TJ = 25°C MAXIMUM @ TJ = 110°C 1 0.1 0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical RMS Current Derating Figure 6. Typical On−State Characteristics http://onsemi.com 4 MCR100 Series ORDERING INFORMATION Device Shipping † Package Code MCR100−003 MCR100−004 5000 Units / Box MCR100−006 MCR100−008 MCR100−3RL MCR100−6RL TO−92 (TO−226) 2000 / Tape & Reel MCR100−6RLRA MCR100−6RLRM 2000 / Tape & Ammo Pack MCR100−6ZL1 MCR100−8RL 2000 / Tape & Reel MCR100−3G MCR100−4G 5000 Units / Box MCR100−6G MCR100−8G MCR100−3RLG MCR100−6RLG TO−92 (TO−226) (Pb−Free) 2000 / Tape & Reel MCR100−6RLRAG MCR100−6RLRMG 2000 / Tape & Ammo Pack MCR100−6ZL1G MCR100−8RLG 2000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MCR100 Series TO−92 EIA RADIAL TAPE IN BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 T1 L1 H1 W1 W L F1 T2 F2 P2 D P2 P1 T P Figure 7. Device Positioning on Tape Specification Inches Symbol Item Millimeter Min Max Min Max 0.1496 0.1653 3.8 4.2 D Tape Feedhole Diameter D2 Component Lead Thickness Dimension 0.015 0.020 0.38 0.51 Component Lead Pitch 0.0945 0.110 2.4 2.8 F1, F2 H Bottom of Component to Seating Plane H1 Feedhole Location .059 .156 1.5 4.0 0.3346 0.3741 8.5 9.5 1.0 H2A Deflection Left or Right 0 0.039 0 H2B Deflection Front or Rear 0 0.051 0 1.0 0.7086 0.768 18 19.5 H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane 0.610 0.649 15.5 16.5 L Defective Unit Clipped Dimension 0.3346 0.433 8.5 11 L1 Lead Wire Enclosure 0.09842 — 2.5 — P Feedhole Pitch 0.4921 0.5079 12.5 12.9 P1 Feedhole Center to Center Lead 0.2342 0.2658 5.95 6.75 First Lead Spacing Dimension 0.1397 0.1556 3.55 3.95 0.06 0.08 0.15 0.20 — 0.0567 — 1.44 P2 T Adhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness 0.014 0.027 0.35 0.65 W Carrier Strip Width 0.6889 0.7481 17.5 19 W1 Adhesive Tape Width 0.2165 0.2841 5.5 6.3 W2 Adhesive Tape Position .0059 0.01968 .15 0.5 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Hold down tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. http://onsemi.com 6 MCR100 Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MCR100/D