MICROSEMI APTGF90DH60TG

APTGF90DH60TG
Asymmetrical - Bridge
NPT IGBT Power Module
VBUS
VBUS SENSE
Q1
CR3
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
•
E1
O UT2
Q4
G4
CR2
E4
0/VBUS SENSE
NTC1
VBUS
SENSE
G4
E4
VBUS
0/VBUS
E1
0/VBUS
SENSE
G1
•
•
NT C2
0/VBUS
OUT2
OUT1
NTC2
NTC1
•
•
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
110
90
315
±20
416
200A @ 600V
Unit
V
A
July, 2006
OUT1
Non Punch Through (NPT) Fast IGBT®
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1-6
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APTGF90DH60TG – Rev 2
G1
VCES = 600V
IC = 90A @ Tc = 80°C
APTGF90DH60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
Min
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Reverse Recovery Time
Qrr
Reverse Recovery Charge
3
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 90A
RG = 5 Ω
VGE = 15V
Tj = 125°C
VBus = 400V
IC = 90A
Tj = 125°C
RG = 5 Ω
VR=600V
Unit
5
±150
V
nA
Max
Unit
µA
V
pF
nC
ns
26
25
ns
170
40
4.3
mJ
3.5
Typ
Tj = 25°C
Tj = 125°C
IF = 100 A
IF = 200 A
IF = 100A
VR = 400V
di/dt =200A/µs
Typ
4300
470
400
330
290
200
26
25
150
Max
250
500
2.5
30
Min
600
T c = 80°C
IF = 100 A
trr
2.0
2.2
VGE = 15V
VBus = 300V
IC = 90A
Test Conditions
Typ
Max
250
500
100
1.6
1.9
Tj = 125°C
1.4
Tj = 25°C
180
Tj = 125°C
220
Tj = 25°C
390
Tj = 125°C
1450
Unit
V
µA
A
1.8
V
July, 2006
ICES
Test Conditions
VGE = 0V
Tj = 25°C
VCE = 600V
Tj = 125°C
T
VGE =15V
j = 25°C
IC = 90A
Tj = 125°C
VGE = VCE, IC = 1mA
VGE = 20 V, VCE = 0V
ns
nC
2-6
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APTGF90DH60TG – Rev 2
Symbol Characteristic
APTGF90DH60TG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
To Heatsink
M5
2500
-40
-40
-40
2.5
RT =
Min
R 25
Unit
°C/W
V
150
125
100
4.7
160
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
Max
0.3
0.55
Typ
50
3952
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature

 1 1  RT : Thermistor value at T
exp B 25 / 85 
− 
 T25 T 

ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
3-6
www.microsemi.com
APTGF90DH60TG – Rev 2
July, 2006
SP4 Package outline (dimensions in mm)
APTGF90DH60TG
Typical Performance Curve
Output characteristics (VGE=15V)
Output Characteristics (VGE=10V)
300
250µs Pulse Test
< 0.5% Duty cycle
300
TJ=-55°C
250
Ic, Collector Current (A)
T J=25°C
200
150
TJ=125°C
100
50
250µs Pulse Test
< 0.5% Duty cycle
250
200
T J=25°C
150
100
TJ=125°C
50
0
0
0
1
2
3
VCE, Collector to Emitter Voltage (V)
0
4
1
2
Gate Charge
250µs Pulse Test
< 0.5% Duty cycle
TJ=-55°C
VGE, Gate to Emitter Voltage (V)
Ic, Collector Current (A)
4
18
250
200
150
100
TJ=25°C
50
TJ=125°C
TJ=-55°C
0
1
2 3
4
5 6
7
8
9
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
8
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
7
6
Ic=180A
5
4
3
Ic=90A
2
Ic=45A
1
0
6
8
10
12
14
VGE, Gate to Emitter Voltage (V)
14
VCE=300V
12
10
VCE =480V
8
6
4
2
0
0
50
100 150 200 250
Gate Charge (nC)
300
350
On state Voltage vs Junction Temperature
4
3.5
Ic=180A
3
2.5
Ic=90A
2
1.5
Ic=45A
1
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.5
0
-50
16
VCE=120V
IC = 90A
TJ = 25°C
16
10
VCE, Collector to Emitter Voltage (V)
0
VCE, Collector to Emitter Voltage (V)
3
VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
300
-25
0
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
DC Collector Current vs Case Temperature
140
1.10
1.00
0.90
0.80
0.70
-50
-25
0
25
50
75
100
125
120
100
80
July, 2006
1.20
Ic, DC Collector Current (A)
Collector to Emitter Breakdown
Voltage (Normalized)
T J=-55°C
60
40
20
0
-50
TJ, Junction Temperature (°C)
-25
0
25
50
75
100 125 150
TC, Case Temperature (°C)
4-6
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APTGF90DH60TG – Rev 2
Ic, Collector Current (A)
350
APTGF90DH60TG
Turn-Off Delay Time vs Collector Current
V GE = 15V
30
25
Tj = 25°C
VCE = 400V
RG = 5Ω
20
15
25
50
75
100
125
150
td(off), Turn-Off Delay Time (ns)
250
VGE=15V,
TJ=125°C
200
150
100
50
25
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VGE=15V,
T J=125°C
20
125
150
60
TJ = 125°C
40
20
T J = 25°C
0
50
75
100
125
ICE, Collector to Emitter Current (A)
150
25
Turn-On Energy Loss vs Collector Current
Eoff, Turn-off Energy Loss (mJ)
8
VCE = 400V
RG = 5Ω
6
TJ=125°C,
VGE=15V
4
T J=25°C,
VGE=15V
2
0
0
25
50
75
100
125
VCE = 400V
VGE = 15V
RG = 5Ω
5
4
TJ = 25°C
2
1
0
150
0
25
Switching Energy Losses (mJ)
Eoff, 180A
Eoff, 90A
Eoff, 45A
4
Eon, 45A
0
10
20
30
40
75
100
125
150
Switching Energy Losses vs Junction Temp.
Eon, 90A
0
50
ICE, Collector to Emitter Current (A)
Eon, 180A
8
TJ = 125°C
3
Switching Energy Losses vs Gate Resistance
12
150
Turn-Off Energy Loss vs Collector Current
6
ICE, Collector to Emitter Current (A)
VCE = 400V
VGE = 15V
TJ= 125°C
50
75
100
125
ICE, Collector to Emitter Current (A)
50
10
V CE = 400V
V GE = 15V
R G = 5Ω
8
Eon, 180A
Eoff, 180A
6
July, 2006
25
Eon, Turn-On Energy Loss (mJ)
100
VCE = 400V, VGE = 15V, RG = 5Ω
tf, Fall Time (ns)
tr, Rise Time (ns)
VCE = 400V
RG = 5Ω
0
Switching Energy Losses (mJ)
75
Current Fall Time vs Collector Current
80
40
16
50
ICE, Collector to Emitter Current (A)
80
60
VGE=15V,
TJ=25°C
VCE = 400V
R G = 5Ω
Eon, 90A
4
Eoff, 90A
2
Eoff, 45A
Eon, 45A
0
Gate Resistance (Ohms)
0
25
50
75
100
TJ, Junction Temperature (°C)
125
5-6
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APTGF90DH60TG – Rev 2
td(on), Turn-On Delay Time (ns)
Turn-On Delay Time vs Collector Current
35
APTGF90DH60TG
Capacitance vs Collector to Emitter Voltage
Reverse Bias Safe Operating Area
10000
250
IC, Collector Current (A)
C, Capacitance (pF)
Cies
1000
Coes
Cres
100
200
150
100
50
0
0
10
20
30
40
VCE, Collector to Emitter Voltage (V)
50
0
200
400
600
800
VCE, Collector to Emitter Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
0.25
0.9
0.7
0.2
0.15
0.1
0.5
0.3
0.1
0.05
0
0.00001
0.05
Single Pulse
0.0001
0.001
0.01
0.1
Rectangular Pulse Duration (Seconds)
Fmax, Operating Frequency (kHz)
Thermal Impedance (°C/W)
0.35
200
1
10
Operating Frequency vs Collector Current
ZVS
160
120
ZCS
V CE = 400V
D = 50%
R G = 5Ω
TJ = 125°C
TC = 75°C
80
40
Hard
switching
0
40
60
80
100
IC , Collector Current (A)
120
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6-6
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APTGF90DH60TG – Rev 2
July, 2006
20