NSC LM2743MTC

LM2743
Low Voltage N-Channel MOSFET Synchronous Buck
Regulator Controller
General Description
Features
The LM2743 is a high-speed synchronous buck regulator
controller with an accurate feedback voltage accuracy of
± 2%. It can provide simple down conversion to output voltages as low as 0.6V. Though the control sections of the IC
are rated for 3 to 6V, the driver sections are designed to
accept input supply rails as high as 16V. The use of adaptive
non-overlapping MOSFET gate drivers helps avoid potential
shoot-through problems while maintaining high efficiency.
The IC is designed for the more cost-effective option of
driving only N-channel MOSFETs in both the high-side and
low-side positions. It senses the low-side switch voltage drop
for providing a simple, adjustable current limit.
The fixed-frequency voltage-mode PWM control architecture
is adjustable from 50 kHz to 1 MHz with one external resistor. This wide range of switching frequency gives the power
supply designer the flexibility to make better tradeoffs between component size, cost and efficiency.
Features include soft-start, input undervoltage lockout
(UVLO) and Power Good (based on both undervoltage and
overvoltage detection). In addition, the shutdown pin of the
IC can be used for providing startup delay, and the soft-start
pin can be used for implementing precise tracking, for the
purpose of sequencing with respect to an external rail.
Power stage input voltage from 1V to 16V
Control stage input voltage from 3V to 6V
Output voltage adjustable down to 0.6V
Power good flag and shutdown
Output overvoltage and undervoltage detection
± 2% feedback voltage accuracy over temperature
Low-side adjustable current sensing
Adjustable soft-start
Tracking and sequencing with shutdown and soft start
pins
n Switching frequency from 50 kHz to 1 MHz
n TSSOP-14 package
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Applications
n
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3.3V Buck Regulation
Cable Modem, DSL and ADSL
Laser Jet and Ink Jet Printers
Low Voltage Power Modules
DSP, ASIC, Core and I/O
Typical Application
20095201
© 2005 National Semiconductor Corporation
DS200952
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LM2743 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller
February 2005
LM2743
Connection Diagram
20095202
14-Lead Plastic TSSOP
θJA = 155˚C/W
Ordering Information
Order Number
Package Type
NSC Package Drawing
Supplied As
LM2743MTC
TSSOP-14
MTC14
94 Units, Raill
LM2743MTCX
TSSOP-14
MTC14
2500 Units on Tape and Reel
SS/TRACK (Pin 9) - Soft-start and tracking pin. This pin is
internally connected to the non-inverting input of the error
amplifier during soft-start, and in fact any time the SS/
TRACK pin voltage happens to be below the internal reference voltage. For the basic soft-start function, a capacitor of
minimum value 1nF is connected from this pin to ground. To
track the rising ramp of another power supply’s output, connect a resistor divider from the output of that supply to this
pin as described in Application Information.
FB (Pin 10) - Feedback pin. This is the inverting input of the
error amplifier, which is used for sensing the output voltage
and compensating the control loop.
FREQ (Pin 11) - Frequency adjust pin. The switching frequency is set by connecting a resistor of suitable value
between this pin and ground. The equation for calculating
the exact value is provided in Application Information, but
some typical values (rounded up to the nearest standard
values) are 324 kΩ for 100 kHz, 97.6 kΩ for 300 kHz, 56.2
kΩ for 500 kHz, 24.9 kΩ for 1 MHz.
SD (Pin 12) - IC shutdown pin. Pull this pin to VCC to ensure
the IC is enabled. Connect to ground to disable the IC. Under
shutdown, both high-side and low-side drives are off. This
pin also features a precision threshold for power supply
sequencing purposes, as well as a low threshold to ensure
minimal quiescent current.
HG (Pin 14) - High-gate drive pin. This is the gate drive for
the high-side N-channel MOSFET. This signal is interlocked
with LG (Pin 2) to avoid shoot-through.
Pin Description
BOOT (Pin 1) - Bootstrap pin. This is the supply rail for the
high-side gate driver. When the high-side MOSFET turns on,
the voltage on this pin should be at least one gate threshold
above the regulator input voltage VIN to properly turn on the
MOSFET. See MOSFET Gate Drivers in the Application
Information section for more details on how to select MOSFETs.
LG (Pin 2) - Low-gate drive pin. This is the gate drive for the
low-side N-channel MOSFET. This signal is interlocked with
the high-side gate drive HG (Pin 14), so as to avoid shootthrough.
PGND (Pins 3, 13) - Power ground. This is also the ground
for the low-side MOSFET driver. Both the pins must be
connected together on the PCB and form a ground plane,
which is usually also the system ground.
SGND (Pin 4) - Signal ground. It should be connected
appropriately to the ground plane with due regard to good
layout practices in switching power regulator circuits.
VCC (Pin 5) Supply rail for the control sections of the IC.
PWGD (Pin 6) - Power Good pin. This is an open drain
output, which is typically meant to be connected to VCC or
any other low voltage source through a pull-up resistor. The
voltage on this pin is thus pulled low under output undervoltage or overvoltage fault conditions and also under input
UVLO.
ISEN (Pin 7) - Current limit threshold setting pin. This sources
a fixed 40 µA current. A resistor of appropriate value should
be connected between this pin and the drain of the low-side
MOSFET (switch node).
EAO (Pin 8) - Output of the error amplifier. The voltage level
on this pin is compared with an internally generated ramp
signal to determine the duty cycle. This pin is necessary for
compensating the control loop.
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please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
ESD Rating (Note 3)
-0.3 to 21V
Supply Voltage Range (VCC)
3V to 6V
-0.3 to VCC + 0.3V
Junction Temperature Range
(TJ)
−40˚C to +125˚C
BOOT Voltage
All other pins
2 kV
Operating Ratings
-0.3 to 7V
VCC
235˚C
Junction Temperature
150˚C
Storage Temperature
−65˚C to 150˚C
Thermal Resistance (θJA)
155˚C/W
Soldering Information
Lead Temperature
(soldering, 10sec)
260˚C
Electrical Characteristics
VCC = 3.3V unless otherwise indicated. Typicals and limits appearing in plain type apply for TA= TJ= 25˚C. Limits appearing in
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,
test, or statistical analysis.
Symbol
Parameter
Conditions
VFB
FB Pin Voltage
VCC = 3V to 6V
VON
UVLO Thresholds
Rising
Falling
IQ_VCC
Operating VCC Current
Min
Typ
Max
Units
0.588
0.6
0.612
V
2.76
2.42
VCC = 3.3V, VSD = 3.3V
Fsw = 600kHz
1.0
1.5
2.1
VCC = 5V, VSD = 3.3V
Fsw = 600kHz
1.0
1.7
2.1
110
185
Shutdown VCC Current
VCC = 3.3V, VSD = 0V
mA
tPWGD1
PWGD Pin Response Time
VFB Rising
6
tPWGD2
PWGD Pin Response Time
VFB Falling
6
ISS-ON
SS Pin Source Current
VSS = 0V
ISS-OC
SS Pin Sink Current During
Over Current
VSS = 2.5V
ISEN-TH
V
7
10
µs
µs
14
90
ISEN Pin Source Current Trip
Point
25
40
µA
µA
µA
55
µA
ERROR AMPLIFIER
GBW
G
Error Amplifier Unity Gain
Bandwidth
9
MHz
Error Amplifier DC Gain
106
dB
SR
Error Amplifier Slew Rate
3.2
V/µs
IEAO
EAO Pin Current Sourcing and
Sinking Capability
VEAO = 1.5, FB = 0.55V
VEAO = 1.5, FB = 0.65V
2.6
9.2
mA
VEA
Error Amplifier Output Voltage
Minimum
1
V
Maximum
2
V
3
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LM2743
Absolute Maximum Ratings (Note 1)
LM2743
Electrical Characteristics
(Continued)
VCC = 3.3V unless otherwise indicated. Typicals and limits appearing in plain type apply for TA= TJ= 25˚C. Limits appearing in
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,
test, or statistical analysis.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
90
µA
GATE DRIVE
IQ-BOOT
BOOT Pin Quiescent Current
VBOOT = 12V, VSD = 0
18
RHG_UP
High-Side MOSFET Driver
Pull-Up ON resistance
VBOOT - VSW = 9.5V@350mA
3
Ω
RHG_DN
High-Side MOSFET Driver
Pull-Down ON resistance
VBOOT - VSW = 4.5V@350mA
2
Ω
RLG_UP
Low-Side MOSFET Driver
Pull-Up ON resistance
VBOOT - VSW = 9.5V@350mA
3
Ω
RLG_DN
Low-Side MOSFET Driver
Pull-Down ON resistance
VBOOT - VSW = 4.5V@350mA
2
Ω
OSCILLATOR
FSW
PWM Frequency
RFADJ = 702.1 kΩ
50
RFADJ = 98.74 kΩ
300
RFADJ = 45.74 kΩ
475
RFADJ = 24.91 kΩ
D
Max High-Side Duty Cycle
600
725
kHz
1000
FSW = 300kHz
FSW = 600kHz
FSW = 1MHz
80
76
73
%
LOGIC INPUTS AND OUTPUTS
V
STBY-IH
Standby High Trip Point
VFB = 0.575V, VBOOT = 3.3V, VSD
Rising
V
STBY-IL
Standby Low Trip Point
VFB = 0.575V, VBOOT = 3.3V, VSD
Falling
VSD Rising
V
SD-IH
SD Pin Logic High Trip Point
V
SD-IL
1.1
0.232
V
V
1.3
V
SD Pin Logic Low Trip Point
VSD Falling
0.8
VPWGD-TH-LO
PWGD Pin Trip Points
FB Falling
0.408
0.434
0.457
V
V
VPWGD-TH-HI
PWGD Pin Trip Points
FB Rising
0.677
0.710
0.742
V
VPWGD-HYS
PWGD Hysteresis
FB Falling
FB Rising
60
90
mV
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device
operates correctly. Opearting Ratings do not imply guaranteed performance limits.
Note 2: The power MOSFETs can run on a separate 1V to 16V rail (Input voltage, VIN). Practical lower limit of VIN depends on selection of the external MOSFET.
Note 3: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin.
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LM2743
Typical Performance Characteristics
Efficiency (VOUT = 2.5V)
VCC = 3.3V, FSW = 300kHz
Efficiency (VOUT = 1.2V)
VCC = 3.3V, FSW = 300kHz
20095240
20095257
VCC Operating Current plus BOOT Current vs Frequency
FDS6898A FET (TA = 25˚C)
Efficiency (VOUT = 3.3V)
VCC = 5V, FSW = 300kHz
20095245
20095241
BOOT Pin Current vs Temperature for
BOOT Voltage = 5V
FSW = 300kHz, FDS6898A FET, No-Load
BOOT Pin Current vs Temperature for
BOOT Voltage = 3.3V
FSW = 300kHz, FDS6898A FET, No-Load
20095242
20095243
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LM2743
Typical Performance Characteristics
(Continued)
BOOT Pin Current vs Temperature for
BOOT Voltage = 12V
FSW = 300kHz, FDS6898A FET, No-Load
Internal Reference Voltage vs Temperature
20095244
20095258
Frequency vs Temperature
Output Voltage vs Output Current
20095260
20095256
Switch Waveforms (HG Falling)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 4A, CSS = 12nF, FSW = 300kHz
Switch Waveforms (HG Rising)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 4A, CSS = 12nF, FSW = 300kHz
20095247
20095246
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(Continued)
Start-Up (Full-Load)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 4A, CSS = 12nF, FSW = 300kHz
Start-Up (No-Load)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
CSS = 12nF, FSW = 300kHz
20095248
20095249
Load Transient Response (IOUT = 0A to 4A)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
CSS = 12nF, FSW = 300kHz
Shutdown (Full-Load)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
IOUT = 4A, CSS = 12nF, FSW = 300kHz
20095250
20095251
Load Transient Response
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
CSS = 12nF, FSW = 300kHz
Load Transient Response (IOUT = 4A to 0A)
VCC = 3.3V, VIN = 5V, VOUT = 1.2V
CSS = 12nF, FSW = 300kHz
20095252
20095253
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LM2743
Typical Performance Characteristics
LM2743
Typical Performance Characteristics
(Continued)
Line Transient Response (VIN = 9V to 3V)
VCC = 3.3V, VOUT = 1.2V
IOUT = 2A, FSW = 300kHz
Line Transient Response (VIN = 3V to 9V)
VCC = 3.3V, VOUT = 1.2V
IOUT = 2A, FSW = 300kHz
20095254
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20095255
8
LM2743
Block Diagram
20095203
Application Information
THEORY OF OPERATION
The LM2743 is a voltage-mode, high-speed synchronous
buck regulator with a PWM control scheme. It is designed for
use in set-top boxes, thin clients, DSL/Cable modems, and
other applications that require high efficiency buck converters. It has output shutdown (SD), input undervoltage lock-out
(UVLO) mode and power good (PWGD) flag (based on
overvoltage and undervoltage detection). The overvoltage
and undervoltage signals are OR-gated to drive the power
good signal and provide a logic signal to the system if the
output voltage goes out of regulation. Current limit is
achieved by sensing the voltage VDS across the low side
MOSFET.
Where CSS is in µF and tSS is in ms.
During soft start the Power Good flag is forced low and it is
released when the FB pin voltage reaches 70% of 0.6V. At
this point the chip enters normal operation mode, and the
output overvoltage and undervoltage monitoring starts.
NORMAL OPERATION
While in normal operation mode, the LM2743 regulates the
output voltage by controlling the duty cycle of the high side
and low side MOSFETs (see Typical Application Circuit).The
equation governing output voltage is:
START UP/SOFT-START
When VCC exceeds 2.76V and the shutdown pin (SD) sees
a logic high, the soft-start period begins. Then an internal,
fixed 10 µA source begins charging the soft-start capacitor.
During soft-start the voltage on the soft-start capacitor CSS is
connected internaly to the non-inverting input of the error
amplifier. The soft-start period lasts until the voltage on the
soft-start capacitor exceeds the LM2743 reference voltage
of 0.6V. At this point the reference voltage takes over at the
non-inverting error amplifier input. The capacitance of CSS
determines the length of the soft-start period, and can be
approximated by:
The PWM frequency is adjustable between 50 kHz and 1
MHz and is set by an external resistor, RFADJ, between the
FREQ pin and ground. The resistance needed for a desired
frequency is approximately:
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LM2743
Application Information
(Continued)
Where FSW is in Hz and RFADJ is in kΩ.
TRACKING A VOLTAGE LEVEL
The LM2743 can track the output of a master power supply
during soft-start by connecting a resistor divider to the SS/
TRACK pin. In this way, the output voltage slew rate of the
LM2743 will be controlled by the master supply for loads that
require precise sequencing. Because the output of the master supply is divided down, in order to track properly the
output voltage of the LM2743 must be lower than the voltage
of the master supply. When the tracking function is used no
soft-start capacitor should be connected to the SS/TRACK
pin. However in all other cases, a CSS value of at least 1nF
between the soft-start pin and ground should be used.
20095208
FIGURE 2. Tracking with Equal Soft-Start Time
TRACKING A VOLTAGE SLEW RATE
The tracking feature can alternatively be used not to make
both rails reach regulation at the same time but rather to
have similar rise rates (in terms of output dV/dt). This
method ensures that the output voltage of the LM2743 always reaches regulation before the output voltage of the
master supply. In this case, the tracking resistors can be
determined based on the following equation:
For the example case of VOUT1 = 5V and VOUT2 = 1.8V, with
RT1 set to 150Ω as before, RT2 is calculated from the above
equation to be 267Ω. A timing diagram for the case of equal
slew rates is shown in Figure 3.
20095207
FIGURE 1. Tracking Circuit
One way to use the tracking feature is to design the tracking
resistor divider so that the master supply’s output voltage
(VOUT1) and the LM2743’s output voltage (represented symbolically in Figure 1 as VOUT2, i.e. without explicitly showing
the power components) both rise together and reach their
target values at the same time. For this case, the equation
governing the values of the tracking divider resistors RT1 and
RT2 is:
20095210
The current through RT1 should be about 3-4 mA for precise
tracking. The final voltage of the SS/TRACK pin should be
set higher than the feedback voltage of 0.6V (say about
0.65V as in the above equation). If the master supply voltage
was 5V and the LM2743 output voltage was 1.8V, for example, then the value of RT1 needed to give the two supplies
identical soft-start times would be 150Ω. A timing diagram for
the equal soft-start time case is shown in Figure 2.
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FIGURE 3. Tracking with Equal Slew Rates
SEQUENCING
The start up/soft-start of the LM2743 can be delayed for the
purpose of sequencing by connecting a resistor divider from
the output of a master power supply to the SD pin, as shown
in Figure 4.
10
LM2743
Application Information
(Continued)
20095214
20095211
FIGURE 4. Sequencing Circuit
FIGURE 5. Delay for Sequencing
A desired delay time tDELAY between the startup of the
master supply output voltage and the LM2743 output voltage
can be set based on the SD pin low-to-high threshold VSD-IH
and the slew rate of the voltage at the SD pin, SRSD:
tDELAY = VSD-IH / SRSD
Note again, that in Figure 4, the LM2743’s output voltage
has been represented symbolically as VOUT2, i.e. without
explicitly showing the power components.
VSD-IH is typically 1.08V and SRSD is the slew rate of the SD
pin voltage. The values of the sequencing divider resistors
RS1 and RS2 set the SRSD based on the master supply
output voltage slew rate, SROUT1, using the following equation:
When connecting a resistor divider to the SD pin of the
LM2743 some care has to be taken. Once the SD voltage
goes above VSD-IH, a 17 µA pull-up current is activated as
shown in Figure 6. This current is used to create the internal
hysteresis ()170mV); however, high external impedances
will affect the SD pin logic thresholds as well. The external
impedance used for the sequencing divider network should
preferably be a small fraction of the impedance of the SD pin
for good performance (around 1kΩ).
SD PIN IMPEDANCE
For example, if the master supply output voltage slew rate
was 1V/ms and the desired delay time between the startup
of the master supply and LM2743 output voltage was 5ms,
then the desired SD pin slew rate would be (1.08V/5ms) =
0.216V/ms. Due to the internal impedance of the SD pin, the
maximum recommended value for RS2 is 1kΩ. To achieve
the desired slew rate, RS2 would then be 274Ω. A timing
diagram for this example is shown in Figure 5.
20095206
FIGURE 6. SD Pin Logic
MOSFET GATE DRIVERS
The LM2743 has two gate drivers designed for driving
N-channel MOSFETs in a synchronous mode. Note that
unlike most other synchronous controllers, the bootstrap
capacitor of the LM2743 provides power not only to the
driver of the upper MOSFET, but the lower MOSFET driver
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LM2743
Application Information
powers both the VCC and the bootstrap circuit, providing
efficient drive for logic level MOSFETs. An example of this
circuit is shown in Figure 8.
(Continued)
too (both drivers are ground referenced, i.e. no floating
driver). To fully turn the top MOSFET on, the BOOT voltage
must be at least one gate threshold greater than VIN when
the high-side drive goes high. This bootstrap voltage is
usually supplied from a local charge pump structure. But
looking at the Typical Application schematic, this also means
that the difference voltage VCC - VD1, which is the voltage the
bootstrap capacitor charges up to, must be always greater
than the maximum tolerance limit of the threshold voltage of
the upper MOSFET. Here VD1 is the forward voltage drop
across the bootstrap diode D1. This therefore may place
restrictions on the minimum input voltage and/or type of
MOSFET used.
The most basic charge bootstrap pump circuit can be built
using one Schottky diode and a small capacitor, as shown in
Figure 7. The capacitor CBOOT serves to maintain enough
voltage between the top MOSFET gate and source to control
the device even when the top MOSFET is on and its source
has risen up to the input voltage level. The charge pump
circuitry is fed from VCC, which can operate over a range
from 3.0V to 6.0V. Using this basic method the voltage
applied to the gates of both high-side and low-side MOSFETs is VCC - VD. This method works well when VCC is
5V ± 10%, because the gate drives will get at least 4.0V of
drive voltage during the worst case of VCC-MIN = 4.5V and
VD-MAX = 0.5V. Logic level MOSFETs generally specify their
on-resistance at VGS = 4.5V. When VCC = 3.3V ± 10%, the
gate drive at worst case could go as low as 2.5V. Logic level
MOSFETs are not guaranteed to turn on, or may have much
higher on-resistance at 2.5V. Sub-logic level MOSFETs, usually specified at VGS = 2.5V, will work, but are more expensive, and tend to have higher on-resistance. The circuit in
Figure 7 works well for input voltages ranging from 1V up to
16V and VCC = 5V ± 10%, because the drive voltage depends only on VCC.
20095213
FIGURE 8. LM78L05 Feeding Basic Charge Pump
Figure 9 shows a second possibility for bootstrapping the
MOSFET drives using a doubler. This circuit provides an
equal voltage drive of VCC - 3VD + VIN to both the high-side
and low-side MOSFET drives. This method should only be
used in circuits that use 3.3V for both VCC and VIN. Even with
VIN = VCC = 3.0V (10% lower tolerance on 3.3V) and VD =
0.5V both high-side and low-side gates will have at least
4.5V of drive. The power dissipation of the gate drive circuitry is directly proportional to gate drive voltage, hence the
thermal limits of the LM2743 IC will quickly be reached if this
circuit is used with VCC or VIN voltages over 5V.
20095219
20095212
FIGURE 9. Charge Pump with Added Gate Drive
FIGURE 7. Basic Charge Pump (Bootstrap)
All the gate drive circuits shown in the above figures typically
use 100nF ceramic capacitors in the bootstrap locations.
Note that the LM2743 can be paired with a low cost linear
regulator like the LP8340 to run from a single input rail
between 6.0 and 16V. The 5V output of the linear regulator
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LM2743
Application Information
(Continued)
POWER GOOD SIGNAL
The Power Good signal is an OR-gated flag which takes into
account both output overvoltage and undervoltage conditions. If the feedback pin (FB) voltage is 18% above its
nominal value (118% x VFB = 0.708V) or falls 28% below that
value (72 %x VFB = 0.42V) the Power Good flag goes low.
The Power Good flag can be used to signal other circuits that
the output voltage has fallen out of regulation, however the
switching of the LM2743 continues regardless of the state of
the Power Good signal. The Power Good flag will return to
logic high whenever the feedback pin voltage is between
72% and 118% of 0.6V.
UVLO
The 2.76V turn-on threshold on VCC has a built in hysteresis
of about 300mV. If VCC drops below 2.42V, the chip enters
UVLO mode. UVLO consists of turning off the top and bottom MOSFETS and remaining in that condition until VCC
rises above 2.76V. As with shutdown, the soft-start capacitor
is discharged through an internal MOSFET, ensuring that the
next start-up will be controlled by the soft-start circuitry.
20095288
FIGURE 10. Current Limit Threshold
CURRENT LIMIT
Current limit is realized by sensing the voltage across the
low-side MOSFET while it is on. The RDSON of the MOSFET
is a known value; hence the current through the MOSFET
can be determined as:
VDS = IOUT * RDSON
The current through the low-side MOSFET while it is on is
also the falling portion of the inductor current. The current
limit threshold is determined by an external resistor, RCS,
connected between the switching node and the ISEN pin. A
constant current of 40 µA is forced through RCS, causing a
fixed voltage drop. This fixed voltage is compared against
VDS and if the latter is higher, the current limit of the chip has
been reached. RCS can be found by using the following
equation:
RCS = RDSON x ILIM / 40 µA
For example, a conservative 15A current limit in a 10A
design with a minimum RDSON of 10mΩ would require a
3.74kΩ resistor. Because current sensing is done across the
low-side MOSFET, no minimum high-side on-time is necessary. The LM2743 enters current limit mode if the inductor
current exceeds the current limit threshold at the point where
the high-side MOSFET turns off and the low-side MOSFET
turns on. (The point of peak inductor current, see Figure 10).
Note that in normal operation mode the high-side MOSFET
always turns on at the beginning of a clock cycle. In current
limit mode, by contrast, the high-side MOSFET on-pulse is
skipped. This causes inductor current to fall. Unlike a normal
operation switching cycle, however, in a current limit mode
switching cycle the high-side MOSFET will turn on as soon
as inductor current has fallen to the current limit threshold.
The LM2743 will continue to skip high-side MOSFET pulses
until the inductor current peak is below the current limit
threshold, at which point the system resumes normal operation.
Unlike a high-side MOSFET current sensing scheme, which
limits the peaks of inductor current, low-side current sensing
is only allowed to limit the current during the converter
off-time, when inductor current is falling. Therefore in a typical current limit plot the valleys are normally well defined, but
the peaks are variable, according to the duty cycle. The
PWM error amplifier and comparator control the off-pulse of
the high-side MOSFET, even during current limit mode,
meaning that peak inductor current can exceed the current
limit threshold. Assuming that the output inductor does not
saturate, the maximum peak inductor current during current
limit mode can be calculated with the following equation:
Where TOSC is the inverse of switching frequency FSW. The
200ns term represents the minimum off-time of the duty
cycle, which ensures enough time for correct operation of
the current sensing circuitry.
In order to minimize the time period in which peak inductor
current exceeds the current limit threshold, the IC also discharges the soft-start capacitor through a fixed 90 µA sink.
The output of the LM2743 internal error amplifier is limited by
the voltage on the soft-start capacitor. Hence, discharging
the soft-start capacitor reduces the maximum duty cycle D of
the controller. During severe current limit this reduction in
duty cycle will reduce the output voltage if the current limit
conditions last for an extended time. Output inductor current
will be reduced in turn to a flat level equal to the current limit
threshold. The third benefit of the soft-start capacitor discharge is a smooth, controlled ramp of output voltage when
the current limit condition is cleared.
SHUTDOWN
If the shutdown pin is pulled low, (below 0.8V) the LM2743
enters shutdown mode, and discharges the soft-start capacitor through a MOSFET switch. The high and low-side MOSFETs are turned off. The LM2743 remains in this state as
long as VSD sees a logic low (see the Electrical Characteristics table). To assure proper IC start-up the shutdown pin
13
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LM2743
Application Information
(Continued)
should not be left floating. For normal operation this pin
should be connected directly to VCC or to another voltage
between 1.3V to VCC (see the Electrical Characteristics
table).
L = 1.6µH
Here we have plugged in the values for output current ripple,
input voltage, output voltage, switching frequency, and assumed a 40% peak-to-peak output current ripple. This yields
an inductance of 1.6 µH. The output inductor must be rated
to handle the peak current (also equal to the peak switch
current), which is (IOUT + 0.5*∆IOUT) = 4.8A, for a 4A design.
The Coilcraft DO3316P-222P is 2.2 µH, is rated to 7.4A
peak, and has a direct current resistance (DCR) of 12mΩ.
DESIGN CONSIDERATIONS
The following is a design procedure for all the components
needed to create the Typical Application Circuit shown on
the front page. This design converts 3.3V (VIN) to 1.2V
(VOUT) at a maximum load of 4A with an efficiency of 89%
and a switching frequency of 300kHz. The same procedures
can be followed to create many other designs with varying
input voltages, output voltages, and load currents.
After selecting an output inductor, inductor current ripple
should be re-calculated with the new inductance value, as
this information is needed to select the output capacitor.
Re-arranging the equation used to select inductance yields
the following:
Input Capacitor
The input capacitors in a Buck converter are subjected to
high stress due to the input current trapezoidal waveform.
Input capacitors are selected for their ripple current capability and their ability to withstand the heat generated since that
ripple current passes through their ESR. Input rms ripple
current is approximately:
VIN(MAX) is assumed to be 10% above the steady state input
voltage, or 3.6V. The actual current ripple will then be 1.2A.
Peak inductor/switch current will be 4.6A.
Where duty cycle D = VOUT/VIN.
The power dissipated by each input capacitor is:
Output Capacitor
The output capacitor forms the second half of the power
stage of a Buck switching converter. It is used to control the
output voltage ripple (∆VOUT) and to supply load current
during fast load transients.
In this example the output current is 4A and the expected
type of capacitor is an aluminum electrolytic, as with the
input capacitors. Other possibilities include ceramic, tantalum, and solid electrolyte capacitors, however the ceramic
type often do not have the large capacitance needed to
supply current for load transients, and tantalums tend to be
more expensive than aluminum electrolytic. Aluminum capacitors tend to have very high capacitance and fairly low
ESR, meaning that the ESR zero, which affects system
stability, will be much lower than the switching frequency.
The large capacitance means that at the switching frequency, the ESR is dominant, hence the type and number of
output capacitors is selected on the basis of ESR. One
simple formula to find the maximum ESR based on the
desired output voltage ripple, ∆VOUT and the designed output current ripple, ∆IOUT, is:
where n is the number of capacitors, and ESR is the equivalent series resistance of each capacitor. The equation above
indicates that power loss in each capacitor decreases rapidly
as the number of input capacitors increases. The worst-case
ripple for a Buck converter occurs during full load and when
the duty cycle (D) is 0.5. For this 3.3V to 1.2V design the
duty cycle is 0.364. For a 4A maximum load the ripple
current is 1.92A.
Output Inductor
The output inductor forms the first half of the power stage in
a Buck converter. It is responsible for smoothing the square
wave created by the switching action and for controlling the
output current ripple (∆IOUT). The inductance is chosen by
selecting between tradeoffs in efficiency and response time.
The smaller the output inductor, the more quickly the converter can respond to transients in the load current. However, as shown in the efficiency calculations, a smaller inductor requires a higher switching frequency to maintain the
same level of output current ripple. An increase in frequency
can mean increasing loss in the MOSFETs due to the charging and discharging of the gates. Generally the switching
frequency is chosen so that conduction loss outweighs
switching loss. The equation for output inductor selection is:
In this example, in order to maintain a 2% peak-to-peak
output voltage ripple and a 40% peak-to-peak inductor current ripple, the required maximum ESR is 20mΩ. The Sanyo
4SP560M electrolytic capacitor will give an equivalent ESR
of 14mΩ. The capacitance of 560 µF is enough to supply
energy even to meet severe load transient demands.
MOSFETs
Selection of the power MOSFETs is governed by a tradeoff
between cost, size, and efficiency. One method is to determine the maximum cost that can be endured, and then
select the most efficient device that fits that price. Breaking
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14
D1 - A small Schottky diode should be used for the bootstrap.
It allows for a minimum drop for both high and low-side
drivers. The MBR0520 or BAT54 work well in most designs.
RCS - Resistor used to set the current limit. Since the design
calls for a peak current magnitude (IOUT+0.5*∆IOUT) of 4.8A,
a safe setting would be 6A. (This is below the saturation
current of the output inductor, which is 7A.) Following the
equation from the Current Limit section, a 1.3kΩ resistor
should be used.
RFADJ - This resistor is used to set the switching frequency of
the chip. The resistor value is calculated from equation in
Normal Operation section. For 300 kHz operation, a 97.6 kΩ
resistor should be used.
CSS - The soft-start capacitor depends on the user requirements and is calculated based on the equation given in the
section titled START UP/SOFT-START. Therefore, for a 7ms
delay, a 12nF capacitor is suitable.
(Continued)
down the losses in the high-side and low-side MOSFETs and
then creating spreadsheets is one way to determine relative
efficiencies between different MOSFETs. Good correlation
between the prediction and the bench result is not guaranteed, however. Single-channel buck regulators that use a
controller IC and discrete MOSFETs tend to be most efficient
for output currents of 2-10A.
Losses in the high-side MOSFET can be broken down into
conduction loss, gate charging loss, and switching loss.
Conduction, or I2R loss, is approximately:
PC = D (IO2 x RDSON-HI x 1.3)
(High-Side MOSFET)
PC = (1 - D) x (IO2 x RDSON-LO x 1.3)
(Low-Side MOSFET)
In the above equations the factor 1.3 accounts for the increase in MOSFET RDSON due to heating. Alternatively, the
1.3 can be ignored and the RDSON of the MOSFET estimated
using the RDSON Vs. Temperature curves in the MOSFET
datasheets.
Control Loop Compensation
The LM2743 uses voltage-mode (‘VM’) PWM control to correct changes in output voltage due to line and load transients. One of the attractive advantages of voltage mode
control is its relative immunity to noise and layout. However
VM requires careful small signal compensation of the control
loop for achieving high bandwidth and good phase margin.
The control loop is comprised of two parts. The first is the
power stage, which consists of the duty cycle modulator,
output inductor, output capacitor, and load. The second part
is the error amplifier, which for the LM2743 is a 9MHz
op-amp used in the classic inverting configuration. Figure 11
shows the regulator and control loop components.
Gate charging loss results from the current driving the gate
capacitance of the power MOSFETs, and is approximated
as:
PGC = n x (VDD) x QG x FSW
where ‘n’ is the number of MOSFETs (if multiple devices
have been placed in parallel), VDD is the driving voltage (see
MOSFET Gate Drivers section) and QGS is the gate charge
of the MOSFET. If different types of MOSFETs are used, the
‘n’ term can be ignored and their gate charges simply
summed to form a cumulative QG. Gate charge loss differs
from conduction and switching losses in that the actual
dissipation occurs in the LM2743, and not in the MOSFET
itself.
Switching loss occurs during the brief transition period as the
high-side MOSFET turns on and off, during which both current and voltage are present in the channel of the MOSFET.
It can be approximated as:
PSW = 0.5 x VIN x IO x (tr + tf) x FSW
where tR and tF are the rise and fall times of the MOSFET.
Switching loss occurs in the high-side MOSFET only.
For this example, the maximum drain-to-source voltage applied to either MOSFET is 3.6V. The maximum drive voltage
at the gate of the high-side MOSFET is 3.1V, and the maximum drive voltage for the low-side MOSFET is 3.3V. Due to
the low drive voltages in this example, a MOSFET that turns
on fully with 3.1V of gate drive is needed. For designs of 5A
and under, dual MOSFETs in SO-8 provide a good tradeoff
between size, cost, and efficiency.
Support Components
CIN2 - A small (0.1 to 1 µF) ceramic capacitor should be
placed as close as possible to the drain of the high-side
MOSFET and source of the low-side MOSFET (dual MOSFETs make this easy). This capacitor should be X5R type
dielectric or better.
RCC, CCC- These are standard filter components designed to
ensure smooth DC voltage for the chip supply. RCC should
be 1-10Ω. CCC should 1 µF, X5R type or better.
CBOOT- Bootstrap capacitor, typically 100nF.
RPULL-UP – This is a standard pull-up resistor for the opendrain power good signal (PWGD). The recommended value
is 10 kΩ connected to VCC. If this feature is not necessary,
the resistor can be omitted.
20095264
FIGURE 11. Power Stage and Error Amp
One popular method for selecting the compensation components is to create Bode plots of gain and phase for the power
stage and error amplifier. Combined, they make the overall
bandwidth and phase margin of the regulator easy to see.
Software tools such as Excel, MathCAD, and Matlab are
useful for showing how changes in compensation or the
power stage affect system gain and phase.
15
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LM2743
Application Information
LM2743
Application Information
(Continued)
The power stage modulator provides a DC gain ADC that is
equal to the input voltage divided by the peak-to-peak value
of the PWM ramp. This ramp is 1.0VP-P for the LM2743. The
inductor and output capacitor create a double pole at frequency fDP, and the capacitor ESR and capacitance create a
single zero at frequency fESR. For this example, with VIN =
3.3V, these quantities are:
20095269
In the equation for fDP, the variable RL is the power stage
resistance, and represents the inductor DCR plus the on
resistance of the top power MOSFET. RO is the output
voltage divided by output current. The power stage transfer
function GPS is given by the following equation, and Figure
12 shows Bode plots of the phase and gain in this example.
a = LCO(RO + RC)
b = L + CO(RORL + RORC + RCRL)
c = R O + RL
20095270
FIGURE 12. Power Stage Gain and Phase
The double pole at 4.5kHz causes the phase to drop to
approximately -130˚ at around 10kHz. The ESR zero, at
20.3kHz, provides a +90˚ boost that prevents the phase from
dropping to -180o. If this loop were left uncompensated, the
bandwidth would be approximately 10kHz and the phase
margin 53˚. In theory, the loop would be stable, but would
suffer from poor DC regulation (due to the low DC gain) and
would be slow to respond to load transients (due to the low
bandwidth.) In practice, the loop could easily become unstable due to tolerances in the output inductor, capacitor, or
changes in output current, or input voltage. Therefore, the
loop is compensated using the error amplifier and a few
passive components.
For this example, a Type III, or three-pole-two-zero approach
gives optimal bandwidth and phase.
In most voltage mode compensation schemes, including
Type III, a single pole is placed at the origin to boost DC gain
as high as possible. Two zeroes fZ1 and fZ2 are placed at the
double pole frequency to cancel the double pole phase lag.
Then, a pole, fP1 is placed at the frequency of the ESR zero.
A final pole fP2 is placed at one-half of the switching frequency. The gain of the error amplifier transfer function is
selected to give the best bandwidth possible without violating the Nyquist stability criteria. In practice, a good crossover
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16
LM2743
Application Information
(Continued)
point is one-fifth of the switching frequency, or 60kHz for this
example. The generic equation for the error amplifier transfer
function is:
In this equation the variable AEA is a ratio of the values of the
capacitance and resistance of the compensation components, arranged as shown in Figure 11. AEA is selected to
provide the desired bandwidth. A starting value of 80,000 for
AEA should give a conservative bandwidth. Increasing the
value will increase the bandwidth, but will also decrease
phase margin. Designs with 45-60˚ are usually best because
they represent a good tradeoff between bandwidth and
phase margin. In general, phase margin is lowest and gain
highest (worst-case) for maximum input voltage and minimum output current. One method to select AEA is to use an
iterative process beginning with these worst-case conditions.
20095274
1. Increase AEA
2. Check overall bandwidth and phase margin
3. Change VIN to minimum and recheck overall bandwidth
and phase margin
4. Change IO to maximum and recheck overall bandwidth
and phase margin
The process ends when the both bandwidth and the phase
margin are sufficiently high. For this example input voltage
can vary from 3.0 to 3.6V and output current can vary from 0
to 4A, and after a few iterations a moderate gain factor of
110,000 is used.
The error amplifier of the LM2743 has a unity-gain bandwidth of 9MHz. In order to model the effect of this limitation,
the open-loop gain can be calculated as:
20095275
FIGURE 13. Error Amp. Gain and Phase
In VM regulators, the top feedback resistor RFB2 forms a part
of the compensation. Setting RFB2 to 10kΩ, ± 1% usually
gives values for the other compensation resistors and capacitors that fall within a reasonable range. (Capacitances >
1pF, resistances < 1MΩ) CC1, CC2, CC3, RC1, and RC2 are
selected to provide the poles and zeroes at the desired
frequencies, using the following equations:
The new error amplifier transfer function that takes into
account unity-gain bandwidth is:
The gain and phase of the error amplifier are shown in
Figure 13.
17
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LM2743
Application Information
(Continued)
In practice, a good trade off between phase margin and
bandwidth can be obtained by selecting the closest ± 10%
capacitor values above what are suggested for CC1 and CC2,
the closest ± 10% capacitor value below the suggestion for
CC3, and the closest ± 1% resistor values below the suggestions for RC1, RC2. Note that if the suggested value for RC2 is
less than 100Ω, it should be replaced by a short circuit.
Following this guideline, the compensation components will
be:
CC1 = 27pF ± 10%, CC2 = 820pF ± 10%
CC3 = 2.7nF ± 10%, RC1 = 39.2kΩ ± 1% RC2 = 2.55kΩ ± 1%
The transfer function of the compensation block can be
derived by considering the compensation components as
impedance blocks ZF and ZI around an inverting op-amp:
20095285
20095286
FIGURE 14. Overall Loop Gain and Phase
The bandwidth of this example circuit is 59kHz, with a phase
margin of 60˚.
EFFICIENCY CALCULATIONS
The following is a sample calculation.
A reasonable estimation of the efficiency of a switching buck
controller can be obtained by adding together the Output
Power (POUT) loss and the Total Power (PTOTAL) loss:
As with the generic equation, GEA-ACTUAL must be modified
to take into account the limited bandwidth of the error amplifier. The result is:
The Output Power (POUT) for theTypical Application Circuit
design is (1.2V * 4A) = 4.8W. The Total Power (PTOTAL), with
an efficiency calculation to complement the design, is shown
below.
The majority of the power losses are due to low and high
side of MOSFET’s losses. The losses in any MOSFET are
group of switching (PSW) and conduction losses(PCND).
PFET = PSW + PCND = 61.38mW + 270.42mW
PFET = 331.8mW
FET Switching Loss (PSW)
PSW = PSW(ON) + PSW(OFF)
The total control loop transfer function H is equal to the
power stage transfer function multiplied by the error amplifier
transfer function.
H = GPS x HEA
The bandwidth and phase margin can be read graphically
from Bode plots of HEA are shown in Figure 14.
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18
LM2743
Application Information
(Continued)
PSW = 0.5 * VIN * IOUT * (tr + tf)* FOSC
PSW = 0.5 x 3.3V x 4A x 300kHz x 31ns
PSW = 61.38mW
The FDS6898A has a typical turn-on rise time tr and turn-off
fall time tf of 15ns and 16ns, respectively. The switching
losses for this type of dual N-Channel MOSFETs are
0.061W.
FET Conduction Loss (PCND)
PCND = PCND1 + PCND2
PCND1 = I2OUT x RDS(ON) x k x D
PCND2 = I2OUT x RDS(ON) x k x (1-D)
RDS(ON) = 13mΩ and the factor is a constant value (k = 1.3)
to account for the increasing RDS(ON) of a FET due to heating.
PCND1 = (4A)2 x 13mΩ x 1.3 x 0.364
where,
Here n is the number of paralleled capacitors, ESR is the
equivalent series resistance of each, and PCAP is the dissipation in each. So for example if we use only one input
capacitor of 24 mΩ.
PCAP = 88.8mW
Output Inductor Loss (PIND)
PIND = I2OUT * DCR
where DCR is the DC resistance. Therefore, for example
PIND = (4A)2 x 11mΩ
PIND = 176mW
2
PCND2 = (4A) x 13mΩ x 1.3 x (1 - 0.364)
PCND = 98.42mW + 172mW = 270.42mW
There are few additional losses that are taken into account:
IC Operating Loss (PIC)
PIC = IQ_VCC x VCC,
where IQ-VCC is the typical operating VCC current
PIC= 1.5mA *3.3V = 4.95mW
FET Gate Charging Loss (PGATE)
PGATE = n * VCC * QGS * FOSC
Total System Efficiency
PGATE = 2 x 3.3V x 3nC x 300kHz
PGATE = 5.94mW
The value n is the total number of FETs used and QGS is the
typical gate-source charge value, which is 3nC. For the
FDS6898A the gate charging loss is 5.94mW.
Input Capacitor Loss (PCAP)
19
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LM2743
Example Circuits
20095232
FIGURE 15. 3.3V to 1.8V @ 2A, FSW = 300kHz
PART
PART NUMBER
TYPE
PACKAGE
U1
LM2743
Synchronous
Controller
TSSOP-14
Q1
FDS6898A
Dual N-MOSFET
SO-8
D1
MBR0520LTI
Schottky Diode
SOD-123
L1
DO3316P-472
Inductor
CIN1
16SP100M
Aluminum
Electrolytic
CO1
6SP220M
CCC, CBOOT,
CIN2, CO2
DESCRIPTION
VENDOR
NSC
20V, 10mΩ@ 4.5V,
16nC
Fairchild
4.7µH, 4.8Arms
18mΩ
Coilcraft
10mm x 6mm
100µF, 16V,
2.89Arms
Sanyo
Aluminum
Electrolytic
10mm x 6mm
220µF, 6.3V
3.1Arms
Sanyo
VJ1206Y104KXXA
Capacitor
1206
0.1µF, 10%
Vishay
CC3
VJ0805Y332KXXA
Capacitor
805
3300pF, 10%
Vishay
CSS
VJ0805A123KXAA
Capacitor
805
12nF, 10%
Vishay
CC2
VJ0805A821KXAA
Capacitor
805
820pF 10%
Vishay
CC1
VJ0805A220KXAA
Capacitor
805
22pF, 10%
Vishay
RFB2
CRCW08051002F
Resistor
805
10.0kΩ 1%
Vishay
RFB1
CRCW08054991F
Resistor
805
4.99kΩ1%
Vishay
RFADJ
CRCW08051103F
Resistor
805
110kΩ 1%
Vishay
RC2
CRCW08052101F
Resistor
805
2.1kΩ 1%
Vishay
RCS
CRCW08057500F
Resistor
805
750Ω 1%
Vishay
RCC
CRCW080510R0F
Resistor
805
10.0Ω 1%
Vishay
RC1
CRCW08055492F
Resistor
805
54.9kΩ 1%
Vishay
RPULL-UP
CRCW08051003J
Resistor
805
100kΩ 5%
Vishay
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20
LM2743
Example Circuits
(Continued)
20095233
FIGURE 16. 5V to 2.5V @ 2A, FSW = 300kHz
PART
PART NUMBER
TYPE
PACKAGE
U1
LM2743
Synchronous
Controller
TSSOP-14
Q1
FDS6898A
Dual N-MOSFET
SO-8
D1
MBR0520LTI
Schottky Diode
SOD-123
L1
DO3316P-682
Inductor
CIN1
16SP100M
Aluminum
Electrolytic
CO1
10SP56M
CCC, CBOOT,
CIN2, CO2
DESCRIPTION
VENDOR
NSC
20V, 10mΩ@ 4.5V,
16nC
Fairchild
6.8µH, 4.4Arms, 27mΩ
Coilcraft
10mm x 6mm
100µF, 16V, 2.89Arms
Sanyo
Aluminum
Electrolytic
6.3mm x 6mm
56µF, 10V 1.7Arms
Sanyo
VJ1206Y104KXXA
Capacitor
1206
0.1µF, 10%
Vishay
CC3
VJ0805Y182KXXA
Capacitor
805
1800pF, 10%
Vishay
CSS
VJ0805A123KXAA
Capacitor
805
12nF, 10%
Vishay
CC2
VJ0805A821KXAA
Capacitor
805
820pF 10%
Vishay
CC1
VJ0805A330KXAA
Capacitor
805
33pF, 10%
Vishay
RFB2
CRCW08051002F
Resistor
805
10.0kΩ 1%
Vishay
RFB1
CRCW08053161F
Resistor
805
3.16kΩ 1%
Vishay
RFADJ
CRCW08051103F
Resistor
805
110kΩ 1%
Vishay
Vishay
RC2
CRCW08051301F
Resistor
805
1.3kΩ 1%
RCS
CRCW08057870F
Resistor
805
787Ω 1%
Vishay
RCC
CRCW080510R0F
Resistor
805
10.0Ω 1%
Vishay
RC1
CRCW08053322F
Resistor
805
33.2kΩ 1%
Vishay
RPULL-UP
CRCW08051003J
Resistor
805
100kΩ 5%
Vishay
21
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LM2743
Example Circuits
(Continued)
20095234
FIGURE 17. 12V to 3.3V @ 4A, FSW = 300kHz
PART
PART NUMBER
TYPE
PACKAGE
U1
LM2743
Synchronous
Controller
TSSOP-14
Q1
FDS6898A
Dual N-MOSFET
SO-8
D1
MBR0520LTI
Schottky Diode
SOD-123
L1
DO3316P-332
Inductor
CIN1
16SP100M
Aluminum
Electrolytic
CO1
6SP220M
CCC, CBOOT,
CIN2, CO2
DESCRIPTION
VENDOR
NSC
20V, 10mΩ@ 4.5V,
16nC
Fairchild
3.3µH, 5.4Arms 15mΩ
Coilcraft
10mm x 6mm
100µF, 16V, 2.89Arms
Sanyo
Aluminum
Electrolytic
10mm x 6mm
220µF, 6.3V 3.1Arms
Sanyo
VJ1206Y104KXXA
Capacitor
1206
0.1µF, 10%
Vishay
CC3
VJ0805Y222KXXA
Capacitor
805
2200pF, 10%
Vishay
CSS
VJ0805A123KXAA
Capacitor
805
12nF, 10%
Vishay
CC2
VJ0805Y332KXXA
Capacitor
805
3300pF 10%
Vishay
CC1
VJ0805A820KXAA
Capacitor
805
82pF, 10%
Vishay
RFB2
CRCW08051002F
Resistor
805
10.0kΩ 1%
Vishay
RFB1
CRCW08052211F
Resistor
805
2.21kΩ 1%
Vishay
RFADJ
CRCW08051103F
Resistor
805
110kΩ 1%
Vishay
RC2
CRCW08052611F
Resistor
805
2.61kΩ 1%
Vishay
RCS
CRCW08057870F
Resistor
805
787Ω 1%
Vishay
RCC
CRCW080510R0F
Resistor
805
10.0Ω 1%
Vishay
RC1
CRCW08051272F
Resistor
805
12.7kΩ 1%
Vishay
RPULL-UP
CRCW08051003J
Resistor
805
100kΩ 5%
Vishay
www.national.com
22
inches (millimeters) unless otherwise noted
TSSOP-14 Pin Package
NS Package Number MTC14
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves
the right at any time without notice to change said circuitry and specifications.
For the most current product information visit us at www.national.com.
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device or system whose failure to perform can be reasonably
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Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain
no ‘‘Banned Substances’’ as defined in CSP-9-111S2.
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LM2743 Low Voltage N-Channel MOSFET Synchronous Buck Regulator Controller
Physical Dimensions