http://www.fujielectric.com/products/semiconductor/ 2MBI100VA-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 100A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at TC =25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES IC IC pulse Collector current -IC -IC pulse Collector power dissipation PC Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg Isolation voltage between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*3) - Conditions Continuous 1ms TC =100°C 1ms 1 device AC : 1min. Maximum ratings 1200 ±20 100 200 100 200 555 175 150 125 -40 ~ 125 2500 5.0 5.0 Units V V A W °C VAC Nm Note *1:All terminals should be connected together when isolation test will be done. Note *2:Recommendable Value : 3.0-5.0 Nm (M5 or M6) Note *3:Recommendable Value : 2.5-3.5 Nm (M5) Electrical characteristics (at Tj = 25°C unless otherwise specified) Items Symbols Conditions Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage ICES IGES VGE (th) VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 100mA VCE (sat) (terminal) VGE = 15V IC = 100A VCE (sat) (chip) VGE = 15V IC = 100A RG (int) Cies ton tr tr (i) toff tf trr VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V LS = 30nH IC = 100A VGE = ±15V RG = 1.6Ω Tj = 150°C Tj =25°C VGE = 0V Tj =125°C IF = 100A Tj =150°C Tj =25°C VGE = 0V Tj =125°C IF = 100A Tj =150°C IF = 100A Symbols Conditions Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time VF (terminal) VF (chip) Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) IGBT FWD with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 Tj =25°C Tj =125°C Tj =150°C Tj =25°C Tj =125°C Tj =150°C Characteristics min. typ. max. 1.0 200 6.0 6.5 7.0 1.90 2.35 2.20 2.25 1.75 2.20 2.05 2.10 7.5 9.1 600 200 50 600 40 1.80 2.25 1.95 1.90 1.70 2.15 1.85 1.80 150 Characteristics min. typ. max. 0.27 0.48 0.050 - Units mA nA V V Ω nF nsec V nsec Units °C/W 2MBI100VA-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 250 250 VGE=20V 15V 200 Collector current: IC [A] 150 10V 100 50 8V 12V 150 10V 100 50 8V 0 0 0 1 2 3 4 0 5 Collector-Emitter voltage: VCE [V] 2 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25°C / chip 10 250 Collector-Emitter Voltage: VCE [V] Tj=25°C 125°C150°C 200 Collector Current: IC [A] 1 Collector-Emitter voltage: VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE= 15V / chip 150 100 50 8 6 4 IC=200A IC=100A IC=50A 2 0 0 0 1 2 3 5 4 10 15 20 25 Gate-Emitter Voltage: VGE [V] Collector-Emitter Voltage: VCE [V] Dynamic Gate Charge (typ.) VCC=600V, IC=100A, Tj= 25°C Gate Capacitance vs. Collector-Emitter Voltage VGE= 0V, ƒ= 1MHz, Tj= 25°C 100 20 Gate-Emitter voltage: VGE [V] Gate Capacitance: Cies, Coes, Cres [nF] 15V Cies 10 Cres 1 Coes 0.1 0 10 20 15 Collector-Emitter voltage: VCE [V] 2 600 VCE 10 400 5 200 0 0 -5 VGE -200 -10 -400 -15 -600 -20 -1.0 30 800 -800 -0.5 0.0 0.5 Gate charge: Qg [μC] 1.0 Collector-Emitter voltage: VCE [V] Collector current: IC [A] 200 VGE= 20V 12V 2MBI100VA-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=1.6Ω, Tj=150°C Switching time vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C 10000 1000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] 10000 ton toff tr 100 tf 10 100 200 tr 100 tf 300 0 100 200 300 Collector current: IC [A] Collector current: IC [A] Switching time vs. Gate resistance (typ.) VCC=600V, IC=100A, VGE=±15V, Tj=125°C Switching loss vs. Collector current (typ.) VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125, 150°C 30 Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] ton toff 10 0 ton toff tr 1000 100 tf 10 1 10 Tj=125 oC Tj=150 oC 25 Eon 20 Eoff 15 Err 10 5 0 0 100 50 100 150 200 250 Gate resistance: RG [Ω] Collector current: IC [A] Switching loss vs. Gate resistance (typ.) VCC=600V, IC=100A, VGE=±15V, Tj=125, 150°C Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C 250 Tj=125 oC Tj=150 oC 12 Eon 10 Collector current: IC [A] 14 Switching loss: Eon, Eoff, Err [mJ/pulse] 1000 Eoff 8 Err 6 4 2 200 150 100 50 0 0 1 10 0 100 Gate resistance: RG [Ω] 400 800 1200 Collector-Emitter voltage: VCE [V] (Main terminals) 3 1600 2MBI100VA-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Forward Current vs. Forward Voltage (typ.) chip Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=1.6Ω, Tj=125°C 250 Forward current: IF [A] 200 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] 1000 Tj=125°C 150 100 125°C 50 150°C 0 100 10 0 1 2 Forward on voltage: VF [V] 3 0 Reverse Recovery Characteristics (typ.) VCC=600V, VGE=±15V, RG=1.6Ω, Tj=150°C 100 200 Forward current: IF [A] 300 Transient Thermal Resistance (max.) 1000 1 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] FWD trr lrr 100 10 0 100 200 FWD safe operating area (max.) Tj=150°C 250 200 Pmax=100kW 150 100 50 0 0 500 1000 IGBT 0.1 0.01 τ Rth [°C/W] 0.001 0.001 300 Forward current: IF [A] Reverse recovery current: Irr [A] trr lrr 1500 Collector-Emitter voltage: VCE [V] (Main terminals) 4 [sec] IGBT FWD 0.0023 0.02896 0.05149 0.0301 0.07343 0.13053 0.0598 0.10373 0.18441 0.01 0.1 Pulse Width : Pw [sec] 0.0708 0.06389 0.11358 1 2MBI100VA-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Equivalent Circuit Schematic C1 G1 E1 C2E1 G2 E2 E2 5 2MBI100VA-120-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sur to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. 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