HSMC HST06

HI-SINCERITY
Spec. No. : HE200902
Issued Date : 2009.08.15
Revised Date :
Page No. : 1/4
MICROELECTRONICS CORP.
HST06
TRIAC 600V,6A
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general
purpose bidirectional switching and phase control applications, where high
sensitivity is required in all four quadrants.
TO-220AB
Pin Configuration
Pin
Description
1
Main terminal 1
2
Main terminal 2
3
Gate
tab
Symbol
tab
T2
T1
1 2 3
G
Main terminal 2
Limtiing Values
Symbol
Parameter
Min.
Max.
Units
VDRM
Repetitive peak off-state voltages
-
600
V
IT(RMS)
RMS on-state current
-
6
A
Non-repetitive peak on-state current(F=50Hz,tp=20ms)
-
60
A
-
21
A2S
-
50
A/us
Peak gate current(tp=20us,Tj=125°C)
-
4
A
PG(AV)
Average gate power (Tj=125°C)
-
1
W
Tstg
Storage Temperature Range
-40
150
°C
Operating junction temperature
-40
125
°C
ITSM
2
It
dIT/dt
IGM
Tj
HST06
2
I t for fusing (IT=10ms)
Repetitive rate of rise of on-state current after triggering
(F=50Hz,IG=50mA,dIg/dt=0.1us)
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE200902
Issued Date : 2009.08.15
Revised Date :
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (Ta=25°C, unless otherwise stated,)
Symbol
Parameter
Quadrant
IGT
Gate Trigger Current (VD=12V)
IL
Latching Current
IGT,Tj=25°C)
IH
Holding Current(IT=0.1A,)
VTM
VGT
ID
(IT=1.2
Rank min
C
Rank max
B
Unit
C
B
I - II - III
25
50
mA
IV
50
100
mA
I - III- IV
40
50
mA
II
80
100
mA
ALL
25
50
mA
1.55
1.55
V
On-state Voltage
(IT=8.5A,)
Gate Trigger Voltage
1.3
V
Off-state Leakage Current TC=25°C
10
uA
(VD = VDRM(max))
1
mA
(VD=12V, Tj=25°C)
TC=125°C
Critical rate of rise of off-state voltage
dVD/dt
VDM=400VTj= 125°C; exponential
waveform; gate open circuit
200
400
V/us
Thermal Resistances
Symbol
Rth j-c
HST06
Parameter
Thermal resistance junction to mounting base
Min.
Typ
2.4
Max.
Unit
°C/W
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200902
Issued Date : 2009.08.15
Revised Date :
Page No. : 3/4
TO-220AB Dimension
Marking:
A
F
B
E
C
D
H
M
I
K
3
G
N
2
1
Tab
O
P
J
L
Note: Green label is used for pb-free packing
Pin Style: 1. Main terminal 1
2 & Tab. Main terminal 2
3.Gate
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Min.
5.58
8.38
4.40
1.15
0.35
2.03
9.66
3.00
0.75
2.54
1.14
12.70
14.48
Max.
7.49
8.90
4.70
1.39
0.60
2.92
10.28
*16.25
*3.83
4.00
0.95
3.42
1.40
*2.54
14.27
15.87
*: Typical, Unit: mm
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.):3F, No.72, Sec. 2, Nanjing E. Rd., Zhongshan Dist., Taipei City 104, Taiwan (R.O.C.).
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
HST06
HSMC Product Specification
HI-SINCERITY
Spec. No. : HE200902
Issued Date : 2009.08.15
Revised Date :
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3 C/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
o
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245 C ±5 C
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
HST06
o
o
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification