HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 1/5 MICROELECTRONICS CORP. HM112 NPN EPITAXIAL PLANAR TRANSISTOR Description SOT-89 The HM112 is designed for use in general purpose amplifier and low-speed switching applications. Darlington Schematic Absolute Maximum Ratings (TA=25°C) C B • Maximum Temperatures Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ................................................................................................................... 1.2 W Total Power Dissipation (Printed circuit board 2mm thick, collector plating 1cm2 square or larger) ....................................................... 1.6 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage ....................................................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................................................... 100 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current (Continue) .............................................................................................................................. 4 A IC Collector Current (Peak) .................................................................................................................................... 6 A Thermal Characteristic Symbol Rθja Characteristic Max. o Thermal Resistance, junction to ambient (TA=25 C) 104 Unit o C/W Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 100 - - V IC=1mA BVCEO 100 - - V IC=30mA ICBO - - 1 mA VCB=100V ICEO - - 2 mA VCE=50V IEBO - - 2 mA VEB=5V *VCE(sat) - - 2.5 V IC=2A, IB=8mA *VBE(on) - - 2.8 V IC=2A, VCE=4V *hFE1 1 - - K IC=1A, VCE=4V *hFE2 500 - - Cob - - 200 IC=2A, VCE=4V pF VCB=10V, f=0.1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% HM112 HSMC Product Specification HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Current Gain & Collector Current 10000 10000 o o 125 C 125 C 1000 1000 o o 75 C hFE hFE 75 C 100 100 o 25 C o 25 C 10 10 hFE @ VCE=4V hFE @ VCE=3V 1 1 1 10 100 1000 1 10000 10 Collector Current IC (mA) Saturation Voltage & Collector Current Saturation Voltage (mV) Saturation Voltage (mV) 25 C o 75 C o 125 C o 1000 25 C o o 125 C 75 C VCE(sat) @ IC=250IB VCE(sat) @ IC=100IB 100 100 1000 100 100 10000 Collector Current IC (mA) Saturation Voltage & Collector Current ON Voltage & Collcetor Current o 25 C o o 125 C 75 C o 25 C 1000 o 75 C o 125 C VBE(sat) @ IC=250IB 1000 Collector Current IC (mA) HM112 10000 10000 ON Voltage (mV) Saturation Voltage (mV) 1000 Collector Current IC (mA) 10000 100 100 10000 10000 o 1000 1000 Saturation Voltage & Collector Current 10000 1000 100 Collector Current IC (mA) 10000 VBE(ON) @ VCE=4V 100 100 1000 10000 Collector Current IC (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 3/5 MICROELECTRONICS CORP. ON Voltage & Collcetor Current Switching Time & Collector Current 10000 10 Switching Times (us) ON Voltage (mV) VCC=30V, IC=250IB1=-250IB2 o 25 C 1000 o 75 C o 125 C Tstg 1 Tf Ton VBE(ON) @ VCE=3V 100 100 0.1 1000 10000 1 10 Collector Current IC (mA) Collector Current (A) Safe Operating Area Capacitance & Reverse-Biased Voltage 100000 1000 Collector Current-IC (mA) Capacitance (pF) 10000 100 Cob 1000 PT=1ms 100 PT=100ms PT=1s 10 1 10 0.1 1 10 Reverse-Biased Voltage (V) HM112 100 1 10 100 1000 Forward Voltage-V CE (V) HSMC Product Specification HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 4/5 MICROELECTRONICS CORP. SOT-89 Dimension C DIM A B C D E F G H I Marking: H Date Code Control Code Pb Free Mark H 1 1 2 D B 1 2 Pb-Free: " " (Note) Normal: None 3 Note: Green label is used for pb-free packing E J F G A I Pin Style: 1.Base 2.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 4.40 4.05 1.50 2.40 0.36 *1.50 *3.00 1.40 0.35 Max. 4.60 4.25 1.70 2.60 0.51 1.60 0.41 *: Typical, Unit: mm 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM112 HSMC Product Specification HI-SINCERITY Spec. No. : HM200102 Issued Date : 2001.07.30 Revised Date : 2002.10.08 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HM112 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification