HI-SINCERITY Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 1/4 MICROELECTRONICS CORP. HST08 TRIAC 600V,8A Description Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. TO-220AB Pin Configuration Pin Description 1 Main terminal 1 2 Main terminal 2 3 Gate tab Symbol tab T2 T1 1 2 3 G Main terminal 2 Limtiing Values Symbol Parameter Min. Max. Units VDRM Repetitive peak off-state voltages - 600 V IT(RMS) RMS on-state current - 8 A Non-repetitive peak on-state current(F=50Hz,tp=20ms) - 80 A - 36 A2S - 50 A/us ITSM 2 It dIT/dt 2 I t for fusing (IT=10ms) Repetitive rate of rise of on-state current after triggering (F=50Hz,IG=50mA,dIg/dt=0.1us) IGM Peak gate current(tp=20us,Tj=125°C) - 4 A PGM Peak gate power(tp=20us,Tj=125°C) - 10 W PG(AV) Average gate power (Tj=125°C) - 1 W Tstg Storage Temperature Range -40 150 °C Operating junction temperature -40 125 °C Tj HST08 HSMC Product Specification HI-SINCERITY Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 2/4 MICROELECTRONICS CORP. Electrical Characteristics (Ta=25°C, unless otherwise stated,) Symbol Parameter Quadrant IGT Gate Trigger Current (VD=12V) IL Latching Current IGT,Tj=25°C) IH Holding Current(IT=0.1A,) VTM VGT ID (IT=1.2 Rank min C Rank max B Unit C B I - II - III 25 50 mA IV 50 100 mA I - III- IV 40 50 mA II 80 100 mA ALL 25 50 mA On-state Voltage (IT=8.5A,) 1.55 V 1.5 V Off-state Leakage Current TC=25°C 10 uA (VD = VDRM(max)) 1 mA Gate Trigger Voltage (VD=12V, Tj=25°C) TC=125°C Critical rate of rise of off-state voltage dVD/dt VDM=400VTj= 125°C; exponential waveform; gate open circuit 200 400 V/us Thermal Resistances Symbol Rth j-c HST08 Parameter Thermal resistance junction to mounting base Min. Typ 1.6 Max. Unit °C/W HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 3/4 TO-220AB Dimension Marking: A F B E C D H M I K 3 G N 2 1 Tab O P J L Note: Green label is used for pb-free packing Pin Style: 1. Main terminal 1 2 & Tab. Main terminal 2 3.Gate Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.):3F, No.72, Sec. 2, Nanjing E. Rd., Zhongshan Dist., Taipei City 104, Taiwan (R.O.C.). Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 HST08 HSMC Product Specification HI-SINCERITY Spec. No. : HE200903 Issued Date : 2009.08.15 Revised Date : Page No. : 4/4 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HST08 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification