ISAHAYA 2SC5398_12

〈transistor〉
2SC5398
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
DESCRIPTION
2SC5398 is a silicon NPN epitaxial type transistor.
It is designed for low frequency voltage amplify
application.
OUTLINE DRAWING
UNIT:mm
TERMINAL CONNECTOR
①:EMITTER
EIAJ: ②:COLLECTOR
JEDEC: ③:BASE
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
50
V
VEBO
Emitter to Base voltage
6
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
PC
Collector dissipation
450
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
398
□□Q
hFE Item
Type name
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
V(BR)CEO
Symbol
Test conditions
Min
Typ
Max
Unit
C to E break down voltage
IC= 100μA , RBE= ∞
50
-
-
V
ICBO
Collector cut off current
V
CB= 50V , I E= 0mA
-
-
0.5
μA
IEBO
Emitter cut off current
V
EB
= 4V , I C= 0mA
-
-
0.5
μA
CE
= 6V , IC= 1mA
120
(※)
560
-
CE
= 6V , IC= 0.1mA
70
-
-
-
hFE
DC forward current gain ※
V
hFE
DC forward current gain
V
VCE(sat)
C to E Saturation voltage
IC =30mA , I B= 1.5mA
-
-
0.3
V
Gain bandwidth product
V
CE= 6V , I E= -10mA
-
200
-
MHz
Collector output capacitance
V
CB
-
2.0
-
pF
fT
Cob
※:It shows hFE classification at right table.
= 6V , I E= 0mA,f=1MHz
Item
Q
R
S
hFE
120~270
180~390
270~560
ISAHAYA ELECTRONICS CORPORATION
〈transistor〉
2SC5398
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type Micro(Frame type)
ISAHAYA ELECTRONICS CORPORATION
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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mishap.
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Feb.2012