2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor designed with high collector current, low VCE（sat）. Unit：mm 2.5 0.5 1.5 0.5 0.95 2.90 FEATURE 1.90 0.95 0.4 ① ●High collector current IC（MAX）=-500mA ●Low collector to emitter saturation voltage VCE（sat）<-0.4Vmax(IC=-150mA、IB=-15mA） ③ 0.16 0～0.1 0.8 1.1 ② APPLICATION For switching application, small type motor drive application. Notice: The dimension without tolerance represent central value. TERMINAL CONNECTOR ①：BASE EIAJ：SC-59 ②：EMITTER JEDEC：TO-236 ③：COLLECTOR Resemblance MAXIMUM RATINGS（Ta=25℃） 記 号 VCEO VCBO VEBO IC PC Tj Tstg 項 目 Collector to Emitter voltage Collector to Base voltage Emitter to Base voltage Collector current Collector dissipation Junction temperature Storage temperature 定 格 値 -60 -60 -5 -500 200 150 -55～150 単 位 V V V mA mW ℃ ℃ MARKING Type Name A ・W ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol V（BR）CEO V（BR）CBO V（BR）EBO ICBO IEBO hFE VCE（sat） VBE（sat） fT Cob Parameter C to E break down voltage C to B break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage B to E saturation voltage Gain band width product Collector output capacitance Test condition IC=-1mA、IB=0 IC=-10uA、IE=0 IE=-10uA、IC=0 VCB=-50V、IE=0 VEB=-3V、IC=0 IC=-150mA、VCE=-10V IC=-150mA、IB=-15mA IC=-150mA、IB=-15mA IE=50mA、VCE=-20V、f=100MHz VCB=-10V、f=1MHz Min -60 -60 -5 100 Limits Typ Max -100 -100 300 -0.4 -1.3 200 ISAHAYA ELECTRONICS CORPORATION 8 Unit V V V nA nA --V V MHz pF 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE 300 -100 IB=-500uA 250 COLLECTOR CURRENT IC(mA) COLLECTOR DISSIPATION Pc(mW) Ta=25℃ COMMON EMITTER OUTPUT 200 150 100 50 IB=-400uA -80 IB=-300uA -60 IB=-200uA -40 IB=-100uA -20 IB=0uA 0 -0 0 50 100 AMBIENT TEMPERATURE Ta(℃) 150 -0 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 500 GAIN BAND WIDTH PRODUCT fT(MHz) DC FORWARD CURRENT GAIN hFE(-) -10 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT 10000 VCE=-10V 1000 25℃ 100 85℃ -40℃ 10 -0.1 Ta=25℃ VCE=-20V 400 300 200 100 0 -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 1 COMMON EMITTER TRANSFER 10 100 EMITTER CURRENT IE(mA) 1000 COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE -500 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) VCE=-10V COLLECTOR CURRENT IC(mA) -2 -4 -6 -8 COLLECTOR TO EMITTER VOLTAGE VCE(V) -400 85℃ -300 25℃ -200 -40℃ -100 -0 -0 -0.2 -0.4 -0.6 -0.8 -1 BASE TO EMITTER VOLTAGE VBE(V) -1.2 Ta=25℃ IE=0 f=1MHz 10 1 0.1 1 10 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION 100 2SA2166 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE AREA OF SAFE OPERATION COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT -10 Ta=25℃ SINGLE PULSE -100 -10 -1 -0.1 85℃ -40℃ 25℃ -1 -10 -100 COLLECTOR CURRENT IC(mA) -1000 100msec -1 1sec ICmax=-0.5A 10msec 1msec -0.1 DC(200mW) -0.01 VCEOmax=-60V IC/IB=10 COLLECTOR CURRENT IC(A) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat)(mV) -1000 -0.001 -0.01 -0.1 -1 -10 -100 -1000 COLLECTOR TO EMITTER VOLTAGE VCE(V) ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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