〈SMALL-SIGNAL TRANSISTOR〉 ISC3244AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ ISC3244AS1 is a silicon NPN epitaxial type transistor 4.0 designed with high collector dissipation, high voltage. 3.0 7.5MAX Complementary with ＩSA1284AS1. 1.0 0.1 ●High gain band width product. ICM=800mA 1.0 VCEo=100V 14.0 ●High voltage. ●High peak collector current. 13.0MIN FEATURE 0.45 fT=130MHz (typ) 2.5 2.5 2.5 0.4 ●High collector dissipation. PC=600mW ① ② ③ APPLICATION Drive for 20 to 40W amplifier, relay drive, power supply application. JEITA： JEDEC： TERMINAL CONNECTER ①：EMITTER MAXIMUM RATINGS（Ta=25℃） Symbol . VCBO VEBO VCEO IC ICM Pc Tj Tstg ②：COLLECTOR Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation Junction temperature Storage temperature Ratings Unit 100 5 100 500 800 600 +150 -55～+150 V V V mA mA mW ℃ ℃ ③：BASE ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Limits Test conditions Min Typ Max Unit V(BR)CBO C to B break down voltage IC= 10μA , IE =0mA 100 - - V V(BR)EBO E to B break down voltage IE= 10μA , IC =0mA 5 - - V V(BR)CEO C to E break down voltage IC= 1mA , RBE= ∞ 100 - - V ICBO Collector cut off current V CB - - 0.5 μA IEBO Emitter cut off current V EB=2V , I C= 0mA - - 0.5 μA hFE※ DC forward current gain V CE = 10V , IC= 10mA 55 - 300 - VCE(sat) fT Cob = 50V , I E= 0mA C to E Saturation Voltage I C=150mA , I B= 15mA - 0.15 0.5 V Gain band width product V - 130 - MHz Collector output capacitance VCB= 10V , IE= 0mA,f=1MHz - 6.5 - pF CE=10V , I E= -10mA ※） It shows hFE classification in right table. Item C D E hFE item 55～110 90～180 150～300 ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3244AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE TYPICAL CHARACTERISTICS COLLECTOR DISSIPATION VS. AMBIENT TEMPERATURE COLLECTOR DISSIPATION Pc(mW) 1000 800 600 400 200 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(℃) ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL TRANSISTOR〉 ISC3244AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE ISAHAYA ELECTRONICS CORPORATION 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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