DSEC29-06AC HiPerFRED VRRM = 600 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC29-06AC Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS220 ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Epoxy meets UL 94V-0 ● Soldering pins for PCB mounting ● Backside: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131024b DSEC29-06AC Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 600 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 600 V IR reverse current, drain current VR = 600 V TVJ = 25°C 100 µA VR = 600 V TVJ = 150°C 0.5 mA TVJ = 25°C 2.04 V 2.25 V 1.34 V VF IF = forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. 15 A IF = 30 A IF = 15 A IF = 30 A typ. TVJ = 150 °C TC = 140°C rectangular 1.59 V T VJ = 175 °C 15 A TVJ = 175 °C 0.99 V d = 0.5 for power loss calculation only 15 mΩ 1.6 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C 12 pF I RM max. reverse recovery current TVJ = 25 °C 5 A t rr reverse recovery time EAS non-repetitive avalanche energy I AS = I AR repetitive avalanche current VA = 1.5·VR typ.: f = 10 kHz IF = IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved K/W 0.50 TC = 25°C 15 A; VR = 300 V -di F /dt = 200 A/µs 1 A L = 180 µH 95 110 W A TVJ = 100°C 7 A TVJ = 25 °C 35 ns TVJ = 100°C 95 ns TVJ = 25 °C Data according to IEC 60747and per semiconductor unless otherwise specified 0.1 mJ 0.1 A 20131024b DSEC29-06AC Package Ratings ISOPLUS220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 °C -55 150 °C 150 °C 1) Weight 2 FC 20 mounting force with clip d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute 60 N terminal to terminal 1.0 mm terminal to backside 3.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL ≤ 1 mA Product Marking UL listed Logo IXYS ® ISOPLUS® XXXXXXXXX Part No. Ayyww Assembly Line abcd Date Code Assembly Code Ordering Standard Part Number DSEC29-06AC Similar Part DSEC30-06A DSEC30-06B Equivalent Circuits for Simulation I V0 R0 Package TO-247AD (3) TO-247AD (3) * on die level Delivery Mode Tube Quantity 50 Code No. 500810 Voltage class 600 600 T VJ = 175 °C Fast Diode V 0 max threshold voltage 0.99 R 0 max slope resistance * 12 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Marking on Product DSEC29-06AC V mΩ Data according to IEC 60747and per semiconductor unless otherwise specified 20131024b DSEC29-06AC E A A2 D2 Outlines ISOPLUS220 E1 D3 D 2 3 2x b2 L L1 1 D1 T Dim. 3x b c 2x e A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 T° W Millimeters min max 4.00 5.00 2.50 3.00 1.60 1.80 0.90 1.30 2.35 2.55 1.25 1.65 0.70 1.00 15.00 16.00 12.00 13.00 1.10 1.50 14.90 15.50 10.00 11.00 7.50 8.50 2.54 BSC 13.00 14.50 3.00 3.50 42.5 47.5 0.1 Inches min max 0.157 0.197 0.098 0.118 0.063 0.071 0.035 0.051 0.093 0.100 0.049 0.065 0.028 0.039 0.591 0.630 0.472 0.512 0.043 0.059 0.587 0.610 0.394 0.433 0.295 0.335 0.100 BSC 0.512 0.571 0.118 0.138 - 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side b4 A1 Die Gehäuseabmessungen entsprechen dem Typ TO-273 gemäß JEDEC außer D und D1. This drawing will meet all dimensions requiarement of JEDEC outline TO-273 except D and D1. W 1 IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved 2 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20131024b DSEC29-06AC Fast Diode 40 2000 40 TVJ = 100°C VR = 300 V TVJ = 150°C 100°C 25°C 30 TVJ = 100°C VR = 300 V 1500 IF 30 Qr 20 IF = 30A 15 A 7.5 A 1000 [A] [μC] 10 20 [A] 500 0 0 1 10 0 100 2 0 1000 0 400 600 800 1000 -diF /dt [A/μs] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF/dt 120 2.0 200 -diF /dt [A/μs] VF [V] Fig. 1 Forward current IF versus VF IF = 30A 15 A 7.5 A IRM 20 TVJ = 100°C VR = 300 V 1.6 TVJ = 100°C IF = 15 A V 110 1.5 15 trr Kf 1.0 100 1.2 trr VFR IF = 30A 15 A 7.5 A 10 0.8 [V] [ns] 90 [μs] IRM 0.5 5 0.0 VFR 70 0 40 0.4 80 Qr 80 120 160 0 0 TVJ [°C] 200 400 600 800 1000 0 -diF /dt [A/μs] 200 400 600 800 0.0 1000 -diF /dt [A/μs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ trr 10 Constants for ZthJC calculation: 1 ZthJC i Rthi (K/W) ti (s) 1 0.908 0.0052 0.1 2 0.350 0.0003 [K/W] 3 0.342 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131024b