VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 IC25 = 42.5 A VCES = 600 V VCE(sat) typ. = 2.4 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII AC1 IK10 JK VDI VID OP9 VIO L9 X15 X16 AC1 F1 Pin arangement see outlines Features Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C TC = 80°C ICM VCEK VGE = ±15 V; RG = 33 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 600 V ± 20 V 42.5 29 A A 60 A VCES 10 µs 130 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.7 mA; VGE = VCE ICES VCE = VCES; IGES VCE = 0 V; VGE = ± 20 V 2.4 2.9 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 300 V; IC = 30 A VGE = 15/0 V; RG = 33 Ω Cies VCE = 25 V; VGE = 0 V; f = 1 MHz RthJC RthJH (per IGBT) with heatsink compound (0.42 K/m.K; 50 µm) IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 2.9 V V 6.5 V 0.6 1.7 mA mA 100 nA 50 50 270 40 1.4 1.0 ns ns ns ns mJ mJ 16 nF 1.92 0.96 K/W K/W • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages • space and weight savings • reduced protection circuits • leads with expansion bend for stress relief Typical Applications • AC and DC motor control • AC servo and robot drives • power supplies • welding inverters 303 IGBTs td(on) tr td(off) tf Eon Eoff B3 PS18 T16 NTC VX18 LN X16 X16 X15 L9 X15 K10 S NTC NTC IK10 GH10 E2 A L9 SV18 X13 1-4 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 VII Reverse diodes (FRED) Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C Symbol Conditions VF IF = 30 A; TVJ = 25°C TVJ = 125°C IRM trr IF = 15 A; diF/dt = 400 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V 7 50 A ns RthJC RthJH with heatsink compound (0.42 K/m.K; 50 µm) 4.6 2.3 K/W K/W 30 19 A A Characteristic Values min. typ. max. 2.57 1.8 2.84 V V B3 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kΩ K VIO Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+150 °C °C VISOL IISOL ≤ 1 mA; 50/60 Hz 3000 V~ Md mounting torque (M4) a Max. allowable acceleration 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight mm mm 24 VID g VDI IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved 303 Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. 2-4 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 90 90 A 75 A 75 IC IC VGE= 17V 15V 13V 60 VGE = 17 V 15 V 13 V 60 TJ = 25°C 11V 45 11V 45 30 30 9V 9V 15 15 25T60 0 0 1 2 3 4 5 V TJ = 125°C 25T60 0 0 6 1 2 3 4 VCE Fig. 1 Typ. output characteristics 6 B3 Fig. 2 Typ. output characteristics 90 90 A 75 75 A IC 5 V VCE IF VCE = 20V 60 60 45 45 30 30 TJ = 125°C TJ = 125°C TJ = 25°C TJ = 25°C 15 15 25T60 0 4 6 8 10 12 25T60 0 0,0 14 V 16 0,5 1,0 1,5 2,0 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 150 50 20 V 40 A 15 VGE 120 ns trr IRM trr 90 30 10 VCE = 300 V IC = 30 A TJ = 125°C VR = 300 V IF = 30 A 20 5 60 30 10 IRM 0 40 80 120 nC 160 QG Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved MUBW3006A7 0 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 303 25T60 0 3-4 VDI 50-06P1 VII 50-06P1 VID 50-06P1 VIO 50-06P1 8 VCE = 300V mJ VGE = ±15V Eon tr R = 33Ω 6 G TVJ = 125°C td(on) 2,0 ns mJ ns 60 1,5 300 t Eon 4 80 Eoff t VCE = 300V VGE = ±15V td(off) 1,0 RG = 33Ω 40 400 Eoff 200 TVJ = 125°C 2 0,5 20 100 tf 25T60 0 0 20 40 25T60 0,0 0 0 60 A 20 40 IC B3 IC Fig. 7 Typ. turn on energy and switching 4 Eon 0 60 A td(on) VCE = 300V mJ VGE = ±15V = 30A I 3 TC = 125°C VJ Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current 2,0 80 ns tr 60 t td(off) ns 300 t Eoff Eon 2 Eoff 400 VCE = 300 V mJ V = ±15 V GE IC = 30 A 1,5 TVJ = 125°C 1,0 200 0,5 100 40 1 tf 25T60 0 0 10 20 30 40 50 60 20 70 Ω 80 25T60 0,0 0 10 20 30 40 RG 0 70Ω 80 60 RG Fig. 9 Typ. turn on energy and switching ICM 50 Fig. 10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor 80 10 A K/W 60 ZthJC diode 1 IGBT 0,1 40 0,01 20 single pulse 0,001 25T60 0 0 100 200 300 400 500 600 700 V 0,0001 0,00001 0,0001 0,001 VCE Fig. 11 Reverse biased safe operating area IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved VDI...50-06P1 0,01 0,1 1 s 10 t Fig. 12 Typ. transient thermal impedance RBSOA 303 RG = 33 Ω TVJ = 125°C 4-4