IXGN60N60C2 IXGN60N60C2D1 HiPerFASTTM IGBTs with Diode VCES = IC110 = VCE(sat) ≤ trr = C2-Class High Speed IGBTs E E 60C2 60C2D1 600V 60A 2.5V 35ns SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient G ±30 V Ec C IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C 60 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A (RBSOA) Clamped Inductive Load @ VCE ≤ 600 V PC TC = 25°C 480 W -55 ... +150 °C TJM 150 °C z Tstg -55 ... +150 °C z 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. z 30 g z TJ VISOL Md 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s Mounting Torque Terminal Connection Torque (M4) Weight G = Gate, C = Collector, E = Emitter c Either Emitter Terminal can be used as Main or Kelvin Emitter Features z z z z International Standard Package miniBLOC Aluminium Nitride Isolation - High Power Dissipation Anti-Parallel Ultra Fast Diode Isolation Voltage 3000 V~ Low VCE(sat) for Minimum On-State Conduction Losses MOS Gate Turn-on - Drive Simplicity Low Collector-to-Case Capacitance (< 50 pF) Low Package Inductance (< 5 nH) - Easy to Drive and to Protect Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. VGE(th) IC 3.0 ICES VCE = VCES VGE = 0V IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 250μA, VCE = VGE = 50A, VGE = 15V, Note 1 TJ = 125°C TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.1 1.8 z z z 5.0 V 650 5 μA mA ±100 nA 2.5 V V z z AC Motor Speed Control DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Advantages z Easy to Mount with 2 Screws z Space Savings z High Power Density DS99177A(01/09) IXGN60N60C2 IXGN60N60C2D1 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 50A, VCE = 10V, Note 1 40 Cies Coes VCE = 25V, VGE = 0V, f = 1MHz Cres Qg Qge IC = 50A, VGE = 15V, VCE = 0.5 • VCES Qgc td(off) tfi td(off) tfi 4750 pF 530 pF 65 pF 146 nC 28 nC 50 nC ns 25 ns IC = 50A, VGE = 15 V 95 VCE = 400V, RG = 2Ω 150 35 0.48 td(on) Eon S 18 Eoff tri 58 Inductive load, TJ = 25°C td(on) tri SOT-227B miniBLOC ns 0.80 18 Inductive load, TJ = 125°C IC = 50A, VGE = 15V VCE = 400V, RG = 2Ω Eoff ns mJ ns 25 ns 0.90 mJ 130 ns 80 ns 1.20 mJ RthJC 0.26 °C/W RthCS 0.05 °C/W Reverse Diode (FRED) Symbol Test Conditions (TJ = 25°C, Unless Oherwise Specified) Characteristic Values Min. Typ. Max. VF IF = 60A, VGE = 0V, Note 1 IRM IF = 60A, -di/dt = 100A/μs, trr IF = 1A, -di/dt = 200A/μs, VR = 30V,VGE = 0V TJ = 150°C 2.1 V V 8.3 A 1.4 TJ = 100°C VR = 100V, VGE = 0V, 35 RthJC ns 0.85 °C/W Note 1: PulseTest, t ≤ 300μs, Duty Cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGN60N60C2 IXGN60N60C2D1 Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25 Deg. C @ 25 deg. C 100 200 VG E = 15V 13V 11V 90 80 VG E = 15V 13V 11V 9V 175 9V 70 7V I C - Amperes I C - Amperes 150 60 50 40 30 125 100 7V 75 50 20 5V 25 10 5V 0 0 0.5 1 1.5 2 2.5 3 1 3.5 1.5 2 Fig. 3. Output Characteristics 3 100 4 4.5 1.2 VG E = 15V 13V 11V 80 9V 1.1 70 VC E (sat) - Normalized 90 7V 60 50 40 30 5V VG E = 15V I C = 100A 1 0.9 I C = 50A 0.8 0.7 I C = 25A 20 0.6 10 0 0.5 0.5 1 1.5 2 2.5 3 3.5 25 50 75 100 125 150 TJ - Degrees Centigrade V CE - Volts Fig. 5. Collector-to-Emitter Voltage Fig. 6. Input Admittance vs. Gate-to-Emitter voltage 5 200 T J = 25º C 4.5 175 150 I C - Amperes 4 VCE - Volts 3.5 Fig. 4. T emperature Dependence of V CE(sat) @ 125 Deg. C I C - Amperes 2.5 V CE - Volts V CE - Volts 3.5 3 2.5 I C = 100A 2 100 75 T J = 125º C 50 50A 1.5 125 25º C -40º C 25 25A 1 0 5 6 7 8 9 10 11 12 13 V GE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 14 15 3.5 4 4.5 5 5.5 6 6.5 V GE - Volts 7 7.5 8 8.5 IXGN60N60C2 IXGN60N60C2D1 Fig. 7. T ransconductance Fig. 8. Dependence of Eoff on RG 100 6 TJ = 125º C VGE = 15V VCE = 400V 90 T J = -40º C 25º C 125º C 70 Eoff - milliJoules g f s - Siemens 80 5 60 50 40 30 I C = 100A 4 I C = 75A 3 I C = 50A 2 20 I C = 25A 1 10 0 0 0 25 50 75 100 125 150 175 2 200 4 10 12 14 Fig. 9. Dependence of Eoff on I C Fig. 10. Dependence of Eoff on T emperature 16 5 R G = 2 Ohms R G = 10 Ohms - - - - - R G = 2 Ohms R G= 10 Ohms - - - - 4 VG E = 15V VC E = 400V Eoff - milliJoules 4 Eoff - MilliJoules 8 R G - Ohms 5 T J = 125 ºC 3 2 T J = 25 ºC 2 I C = 50A 0 0 40 50 60 70 80 90 VG E = 15V VC E = 400V I C = 75A 1 30 I C = 100A 3 1 20 100 I C = 25A 25 50 I C - Amperes 75 100 125 TJ - Degrees Centigrade Fig. 11. Gate Charge Fig. 12. Capacitance Fig. 12. Capacitance 10,000 10000 15 f = 1M Hz VC E = 300V I C = 50A I G = 10mA Cies Capacitance - pF Capacitance - PicoFarads 12 VG E - Volts 6 I C - Amperes 9 6 C ies 1,000 1000 Coes C oes 100 100 3 Cres C res f = 1 MHz 0 10 10 0 20 40 60 80 100 120 140 160 Q G - nanoCoulombs 00 55 10 10 15 15 20 25 20 25 V Volts V CE- Volts 30 30 35 35 4040 CE IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS REF: G_60N60C2(7Y)12-11-08-A IXGN60N60C2 IXGN60N60C2D1 160 A 140 IF 4000 80 TVJ= 100°C VR = 300V nC 120 3000 60 TVJ= 150°C 100°C 25°C 80 IF= 120A, 60A, 30A IRM Qr 100 TVJ= 100°C VR = 300V A IF= 120A, 60A, 30A 2000 40 60 40 1000 20 20 0 0 1 2 0 100 V A/μs 1000 -diF/dt VF Fig. 13. Forward Current IF Versus VF Fig. 14. Reverse Recorvery Charge Qr Versus -diF/dt 2.0 140 200 400 1.6 TVJ= 100°C IF = 60A 1.2 VFR IF= 30A, 60A, 120A 110 IRM μs trr 120 1.0 600 A/μs 800 1000 -diF/dt Fig. 15. Peak Reverse Current IRM Versus -diF/dt V V FR 15 trr Kf 0 20 TVJ= 100°C VR = 300V ns 130 1.5 0 10 0.8 5 0.4 100 0.5 QRM 0.0 0 40 90 80 120 °C 160 80 0 200 400 T VJ 600 800 A/μs 1000 0 0 200 400 -diF/dt Fig. 16. Dynamic Paraments Qr, IRM Versus TvJ 0.0 600 A/μs 800 1000 diF/dt Fig. 18. Peak Forward Voltage VRM and trr Versus -diF/dt Fig. 17. Recorvery Time trr Versus -diF/dt 1 1.000 K/W Z(th)JC [ ºC / W ] 0.1 Z thJC 0.100 0.01 0.010 0.001 0.0001 0.00001 0.001 0.0001 DSEP 2x61-06A 0.0001 0.001 0.01 0.001 0.1 0.01 t s 1 0.1 Fig. 27. Maximum Transient Thermal Impeadance Juection to Case Pulse Width [(for s ] Diode) Fig. 27. Maximum Transient Thermal Impedance (for diode) © 2009 IXYS CORPORATION, All Rights Reserved 1 10 tfr