Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ VGSS VGSM G 75 75 V V Continuous Transient ± 20 ± 30 V V ID25 IL(RMS) IDM TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM 520 160 1350 A A A IA EAS TC = 25°C TC = 25°C 200 3 A J PD TC = 25°C 1250 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. z 20..120 /4.5..27 N/lb. z 10 6 g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO-264) FC Mounting Force Weight TO-264 PLUS247 (PLUS247) D Tab S PLUS247 (IXFX) G D Tab S G = Gate S = Source D = Drain Tab = Drain Features z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 75 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 TJ = 150°C © 2009 IXYS CORPORATION, All Rights Reserved z z Easy to Mount Space Savings High Power Density V 5.0 V ± 200 nA 25 μA 2 mA Applications z z z DC-DC Converters and Off-Line UPS Primary-Side Switch High Speed Power Switching Applications 2.2 mΩ DS100211(11/09) IXFK520N075T2 IXFX520N075T2 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 65 VDS = 10V, ID = 60A, Note 1 105 S 41 nF 4150 pF 530 pF 1.36 Ω 48 ns 36 ns 80 ns 35 ns 545 nC 177 nC 135 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGI td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 200A RG = 1Ω (External) Qg(on) Qgs TO-264 (IXFK) Outline VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS Qgd 0.12 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM IF = 150A, VGS = 0V QRM -di/dt = 100A/μs VR = 37.5V 520 A 1600 A 1.25 V 7 150 ns A 357 nC Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Includes lead resistance. Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T ADVANCE TECHNICAL INFORMATION IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 5,049,961 5,063,307 5,187,117 .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 4,931,844 5,017,508 5,034,796 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. PLUS 247TM (IXFX) Outline Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 Millimeter Min. Max. 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK520N075T2 IXFX520N075T2 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 350 VGS = 15V VGS = 15V 10V 9V 300 250 250 8V ID - Amperes ID - Amperes 10V 9V 8V 300 200 7V 150 100 7V 200 150 6V 100 6V 50 50 5V 5V 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.7 1.0 2.0 2.5 3.0 Fig. 3. Output Characteristics @ T J = 150ºC Fig. 4. RDS(on) Normalized to ID = 150A Value vs. Junction Temperature 2.2 VGS = 15V 10V 9V 300 VGS = 10V 2.0 250 1.8 200 R DS(on) - Normalized 8V 7V 150 100 6V ID = 300A 1.6 ID = 150A 1.4 1.2 1.0 50 0.8 5V 0 0.0 0.2 0.4 0.6 0.8 1.0 0.6 1.2 1.4 -50 -25 0 25 VDS - Volts 50 75 100 125 150 175 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 150A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 180 2.2 160 2.0 External Lead Current Limit TJ = 175ºC 140 1.8 120 1.6 ID - Amperes R DS(on) - Normalized 1.5 VDS - Volts 350 ID - Amperes 0.5 VDS - Volts VGS = 10V 15V 1.4 100 80 60 1.2 40 TJ = 25ºC 1.0 20 0 0.8 0 50 100 150 200 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXFK520N075T2 IXFX520N075T2 Fig. 7. Input Admittance Fig. 8. Transconductance 200 200 180 180 160 160 TJ = 150ºC 25ºC - 40ºC 120 25ºC 140 g f s - Siemens 140 ID - Amperes TJ = - 40ºC 100 80 120 150ºC 100 80 60 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 80 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 120 140 160 180 200 220 Fig. 10. Gate Charge 10 300 VDS = 37.5V 9 250 I D = 260A 8 I G = 10mA 7 VGS - Volts 200 IS - Amperes 100 ID - Amperes 150 TJ = 150ºC 100 6 5 4 3 TJ = 25ºC 2 50 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 100 200 VSD - Volts 400 500 600 Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100.0 RDS(on) Limit Ciss 1,000 10.0 ID - Amperes Capacitance - NanoFarads 300 QG - NanoCoulombs Coss 25µs 100µs External Lead Limit 100 1ms 1.0 10 Crss f = 1 MHz 10ms TJ = 175ºC 100ms TC = 25ºC DC Single Pulse 0.1 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 1 10 VDS - Volts 100 IXFK520N075T2 IXFX520N075T2 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 180 180 RG = 1Ω , VGS = 10V 160 140 VDS = 37.5V 140 120 I 100 D t r - Nanoseconds t r - Nanoseconds RG = 1Ω , VGS = 10V 160 VDS = 37.5V = 200A 80 60 I D TJ = 125ºC 120 100 80 60 = 100A 40 40 20 20 TJ = 25ºC 0 0 25 35 45 55 65 75 85 95 105 115 40 125 60 80 100 TJ - Degrees Centigrade 600 td(on) - - - - 120 I D = 100A 40 32 0 30 5 6 7 8 9 100 I D = 200A 34 25 10 35 45 55 65 75 85 95 105 115 Fig. 17. Resistive Turn-off Switching Times vs. Drain Current Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 180 tf td(off) - - - - RG = 1Ω, VGS = 10V 120 38 TJ = 125ºC TJ = 25ºC 100 36 80 34 60 32 60 80 100 120 140 160 ID - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 180 40 200 600 tf 160 140 40 600 td(off) - - - - TJ = 125ºC, VGS = 10V 500 500 VDS = 37.5V t d(off) - Nanoseconds 42 70 125 400 400 I D = 200A, 100A 300 300 200 200 100 100 0 0 1 2 3 4 5 6 RG - Ohms 7 8 9 10 t d(off) - Nanoseconds VDS = 37.5V 90 80 TJ - Degrees Centigrade 44 t f - Nanoseconds 110 RG - Ohms 46 40 120 36 100 4 VDS = 37.5V I D = 100A 80 3 130 38 200 0 td(off) - - - - RG = 1Ω, VGS = 10V 40 t f - Nanoseconds t r - Nanoseconds 300 2 200 t d(off) - Nanoseconds 160 t d(on) - Nanoseconds 400 1 180 140 tf 42 200 I D = 200A t f - Nanoseconds TJ = 125ºC, VGS = 10V VDS = 37.5V 160 44 240 500 140 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance tr 120 ID - Amperes IXFK520N075T2 IXFX520N075T2 Fig. 19. Maximum Transient Thermal Impedance 1.000 Fig. 19. Maximum Transient Thermal Impedance .sadgsfgsf 0.300 Z (th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF:F_520N075T2(V9)11-09-09