IXTT6N150 IXTH6N150 High Voltage Power MOSFETs VDSS ID25 1500V 6A 3.5Ω RDS(on) ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXTT) G Symbol Test Conditions VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1500 V Maximum Ratings VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, Pulse Width Limited by TJM IA EAS TC = 25°C TC = 25°C dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C PD TC = 25°C TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Md Mounting Torque (TO247) Weight TO-268 TO-247 6 A 24 A 3 500 A mJ 5 V/ns 540 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 4 6 g g S D (Tab) TO-247 (IXTH) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1500 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V z z z V ±100 nA TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved 25 μA 250 μA 3.5 D (Tab) D = Drain Tab = Drain International Standard Packages Molding Epoxies Weet UL 94 V-0 Flammability Classification Fast Intrinsic Diode Low Package Inductance Advantages V 5.0 S Features z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) D G = Gate S = Source z RDS(on) = = Ω z z Easy to Mount Space Savings High Power Density Applications z z z High Voltage Power Supplies Capacitor Discharge Pulse Circuits DS100233B(05/12) IXTT6N150 IXTH6N150 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 4.0 VDS = 20V, ID = 0.5 • ID25, Note 1 Ciss Coss 6.5 mS 2230 pF 170 pF 64 pF 22 ns 20 ns 50 ns 38 ns 67 nC 12 nC 36 nC VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd Terminals: 1 - Gate 3 - Source 2,4 - Drain 0.23 °C/W RthJC RthCS TO-268 Outline TO-247 °C/W 0.21 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 6 A ISM Repetitive, Pulse Width Limited by TJM 24 A VSD IF = 6A, VGS = 0V, Note 1 1.3 V trr IF = 3A, -di/dt = 100A/μs IRM QRM VR = 100V, VGS = 0V 1.5 μs 12 A 9 μC TO-247 Outline 1 2 ∅P 3 e Note: Terminals: 1 - Gate 3 - Source 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTT6N150 IXTH6N150 Fig. 2. Extended Output Characteristics @ T J = 25ºC Fig. 1. Output Characteristics @ T J = 25ºC 10 6 VGS = 10V VGS = 10V 9 5 8 7V 7V 7 ID - Amperes ID - Amperes 4 3 6V 2 5 4 3 6V 2 1 1 5V 0 5V 0 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 3A Value vs. Junction Temperature 6 35 3.4 VGS = 10V 7V R DS(on) - Normalized 4 VGS = 10V 3.0 5 ID - Amperes 6 6V 3 2 2.6 I D = 6A 2.2 I D = 3A 1.8 1.4 1.0 1 5V 0.6 0 0.2 0 5 10 15 20 25 30 35 -50 40 0 25 50 75 100 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 3A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 7 2.8 VGS = 10V 2.6 6 2.4 TJ = 125ºC 5 2.2 ID - Amperes R DS(on) - Normalized -25 VDS - Volts 2.0 1.8 1.6 1.4 4 3 2 TJ = 25ºC 1.2 1 1.0 0.8 0 0 1 2 3 4 5 6 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved 7 8 9 10 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTT6N150 IXTH6N150 Fig. 8. Transconductance Fig. 7. Input Admittance 12 9 TJ = - 40ºC 8 10 ID - Amperes 6 g f s - Siemens 7 TJ = 125ºC 25ºC - 40ºC 5 4 3 25ºC 8 125ºC 6 4 2 2 1 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 1 2 3 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 5 6 7 8 9 Fig. 10. Gate Charge 20 10 18 9 16 8 14 7 VDS = 750V I D = 3A I G = 10mA VGS - Volts IS - Amperes 4 ID - Amperes 12 10 8 6 5 4 TJ = 125ºC 6 3 TJ = 25ºC 4 2 1 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 10 20 30 40 50 60 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 70 100 10,000 RDS(on) Limit Ciss 1,000 25µs 10 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 100µs 1ms 1 100 10ms TJ = 150ºC Crss TC = 25ºC DC Single Pulse 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXTT6N150 IXTH6N150 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_6N150 (5P)1-19-10