IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 16 A IDM TC = 25°C, pulse width limited by TJM 35 A IA TC = 25°C 8 A EAS TC = 25°C 800 mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 660 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL Maximum lead temperature for soldering 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque (TO-247) 1.13 / 10 Nm/lb.in. Weight TO-247 TO-268 6 5 g g TAB TO-268 (IXFT) G G = Gate S = Source z z z z z BVDSS VGS = 0V, ID = 1mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V z RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V ± 200 nA 25 μA 2.5 mA International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Easy to mount Space savings High power density Applications: V 6.5 D = Drain TAB = Drain Advantages z Characteristic Values Min. Typ. Max. TAB Features z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 950 mΩ DS99896A (04/08) IXFH16N120P IXFT16N120P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 7 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate input resistance td(on) TO-247 (IXFH) Outline 11 S 6900 pF 390 pF 48 pF 1.4 Ω 35 ns tr Resistive Switching Times 28 ns td(off) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 66 ns tf RG = 2Ω (External) 35 ns 120 nC 37 nC 47 nC Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.19 °C/W RthJC RthCS °C/W (TO-247) 0.21 Source-Drain Diode TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 16 A ISM Repetitive, pulse width limited by TJM 64 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 8A, -di/dt = 100A/μs 300 ns QRM VR = 100V, VGS = 0V IRM 0.75 μC 7.5 A ∅P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFH16N120P IXFT16N120P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 16 26 VGS = 10V 8V 14 VGS = 10V 8V 24 22 12 20 7V ID - Amperes ID - Amperes 18 10 8 6 6V 7V 16 14 12 10 6V 8 4 6 4 2 5V 5V 2 0 0 0 2 4 6 8 10 12 14 16 0 5 10 16 25 30 2.8 VGS = 10V 8V 7V 14 2.6 VGS = 10V 2.4 RDS(on) - Normalized 12 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 8A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 10 6V 8 6 4 2.2 2.0 I D = 16A 1.8 I D = 8A 1.6 1.4 1.2 1.0 0.8 2 5V 0.6 0 0.4 0 5 10 15 20 25 30 35 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 8A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 18 2.4 VGS = 10V 2.2 16 TJ = 125ºC 14 2.0 12 ID - Amperes RDS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 1.4 10 8 6 1.2 4 TJ = 25ºC 1.0 2 0 0.8 0 2 4 6 8 10 12 14 16 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 18 20 22 24 26 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFH16N120P IXFT16N120P Fig. 7. Input Admittance 18 14 16 g f s - Siemens 10 TJ = - 40ºC 14 TJ = 125ºC 25ºC - 40ºC 12 ID - Amperes Fig. 8. Transconductance 16 8 6 4 25ºC 12 10 125ºC 8 6 4 2 2 0 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 2 4 6 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 10 12 14 16 Fig. 10. Gate Charge 50 10 45 9 40 8 35 7 VGS - Volts IS - Amperes 8 ID - Amperes 30 25 20 TJ = 125ºC 15 VDS = 600V I D = 8A I G = 10mA 6 5 4 3 TJ = 25ºC 10 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 1.3 10 20 30 VSD - Volts 40 50 60 70 80 90 100 110 120 130 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.00 Ciss 10,000 1,000 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 0.10 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_16N120P(85) 04-03-08-A