Advance Technical Information IXTP02N120P IXTY02N120P PolarTM Power MOSFET VDSS ID25 RDS(on) = 1200V = 0.2A ≤ 75Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 0.2 A IDM TC = 25°C, Pulse Width Limited by TJM 0.6 A IA EAS TC = 25°C TC = 25°C 0.2 40 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 33 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg G G S D (Tab) G = Gate S = Source z 300 °C z TSOLD Plastic Body for 10s 260 °C z Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. Weight TO-220 TO-252 3.00 0.35 g g z z VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 100μA 2.0 IGSS z 4.0 V VGS = ±20V, VDS = 0V ±50 nA IDSS VDS = VDSS, VGS = 0V 1 25 μA μA RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 75 Ω © 2009 IXYS CORPORATION, All Rights Reserved 60 Easy to Mount Space Savings High Power Density Applications V TJ = 125°C International Standard Packages Avalanche Rated Low Package Inductance Advantages z BVDSS D = Drain Tab = Drain Features 1.6mm (0.062) from Case for 10s Characteristic Values Min. Typ. Max. D (Tab) TO-252 (IXTY) TL Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) DS z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100201(10/09) IXTP02N120P IXTY02N120P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS = 30V, ID = 0.5 • ID25, Note 1 0.12 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 (IXTP) Outline 0.20 S 104 8.6 1.9 pF pF pF 6 10 21 39 ns ns ns ns VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 4.70 0.37 3.20 nC nC nC TO-220 0.50 3.8 °C/W °C/W Resistive Switching Times VGS = 10V, VDS = 60V, ID = 0.5 • ID25, RG = 50Ω (External) Pins: 1 - Gate 2 - Drain Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 0.2 A ISM Repetitive, Pulse Width Limited by TJM 0.8 A VSD IF = IS, VGS = 0V, Note 1 1.3 V trr IRM QRM IF = 0.2A, -di/dt = 50A/μs, VR = 100V, VGS = 0V 1.6 3.5 2.8 μs A μC TO-252 (IXTY) Outline Pins: Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Dim. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTP02N120P IXTY02N120P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 200 1000 VGS = 10V 7V 6V 160 800 140 700 120 VGS = 10V 8V 7V 900 ID - MilliAmperes ID - MilliAmperes 180 5V 100 80 60 6V 600 500 400 5V 300 4V 40 200 20 4V 100 3V 0 0 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 100mA Value vs. Junction Temperature 200 350 3.0 VGS = 10V 7V 180 VGS = 10V 2.6 140 R DS(on) - Normalized ID - MilliAmperes 160 6V 120 100 5V 80 60 2.2 I D = 200mA 1.8 I D = 100mA 1.4 1.0 40 0.6 4V 20 0 0.2 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100mA Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 220 5.0 200 VGS = 10V 4.5 180 160 TJ = 125ºC 3.5 ID - MilliAmperes R DS(on) - Normalized 4.0 3.0 2.5 2.0 140 120 100 80 TJ = 25ºC 60 1.5 40 1.0 20 0 0.5 0 100 200 300 400 500 600 ID - MilliAmperes © 2009 IXYS CORPORATION, All Rights Reserved 700 800 900 1000 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTP02N120P IXTY02N120P Fig. 8. Transconductance 400 300 350 TJ = - 40ºC 300 250 g f s - MilliSiemens ID - MilliAmperes Fig. 7. Input Admittance 350 200 TJ = 125ºC 25ºC - 40ºC 150 100 25ºC 250 125ºC 200 150 100 50 50 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 350 Fig. 10. Gate Charge 10 800 VDS = 600V 9 700 I D = 100mA 8 600 I G = 1mA 7 500 VGS - Volts IS - MilliAmperes 150 ID - MilliAmperes 400 6 5 4 300 3 TJ = 125ºC 200 2 TJ = 25ºC 1 100 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 QG - NanoCoulombs VSD - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10.0 Ciss 100 Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz Coss 10 1.0 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_02N120P(F2)10-01-09