IXYS IXTY02N120P

Advance Technical Information
IXTP02N120P
IXTY02N120P
PolarTM
Power MOSFET
VDSS
ID25
RDS(on)
= 1200V
= 0.2A
≤ 75Ω
Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-220 (IXTP)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
0.2
A
IDM
TC = 25°C, Pulse Width Limited by TJM
0.6
A
IA
EAS
TC = 25°C
TC = 25°C
0.2
40
A
mJ
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
10
V/ns
PD
TC = 25°C
33
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
G
G
S
D (Tab)
G = Gate
S = Source
z
300
°C
z
TSOLD
Plastic Body for 10s
260
°C
z
Md
Mounting Torque (TO-220)
1.13 / 10
Nm/lb.in.
Weight
TO-220
TO-252
3.00
0.35
g
g
z
z
VGS = 0V, ID = 250μA
1200
VGS(th)
VDS = VGS, ID = 100μA
2.0
IGSS
z
4.0
V
VGS = ±20V, VDS = 0V
±50
nA
IDSS
VDS = VDSS, VGS = 0V
1
25
μA
μA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
75
Ω
© 2009 IXYS CORPORATION, All Rights Reserved
60
Easy to Mount
Space Savings
High Power Density
Applications
V
TJ = 125°C
International Standard Packages
Avalanche Rated
Low Package Inductance
Advantages
z
BVDSS
D
= Drain
Tab = Drain
Features
1.6mm (0.062) from Case for 10s
Characteristic Values
Min.
Typ.
Max.
D (Tab)
TO-252 (IXTY)
TL
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
DS
z
z
z
z
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS100201(10/09)
IXTP02N120P
IXTY02N120P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
VDS = 30V, ID = 0.5 • ID25, Note 1
0.12
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
TO-220 (IXTP) Outline
0.20
S
104
8.6
1.9
pF
pF
pF
6
10
21
39
ns
ns
ns
ns
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
4.70
0.37
3.20
nC
nC
nC
TO-220
0.50
3.8 °C/W
°C/W
Resistive Switching Times
VGS = 10V, VDS = 60V, ID = 0.5 • ID25,
RG = 50Ω (External)
Pins:
1 - Gate
2 - Drain
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
0.2
A
ISM
Repetitive, Pulse Width Limited by TJM
0.8
A
VSD
IF = IS, VGS = 0V, Note 1
1.3
V
trr
IRM
QRM
IF = 0.2A, -di/dt = 50A/μs,
VR = 100V, VGS = 0V
1.6
3.5
2.8
μs
A
μC
TO-252 (IXTY) Outline
Pins:
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
1 - Gate
3 - Source
Millimeter
Min. Max.
2,4 - Drain
Inches
Min.
Max.
A
A1
2.19
0.89
2.38
1.14
0.086
0.035
0.094
0.045
A2
b
0
0.64
0.13
0.89
0
0.025
0.005
0.035
b1
b2
0.76
5.21
1.14
5.46
0.030
0.205
0.045
0.215
c
c1
0.46
0.46
0.58
0.58
0.018
0.018
0.023
0.023
D
D1
5.97
4.32
6.22
5.21
0.235
0.170
0.245
0.205
E
E1
6.35
4.32
6.73
5.21
0.250
0.170
0.265
0.205
e
e1
2.28 BSC
4.57 BSC
H
L
9.40 10.42
0.51 1.02
0.370
0.020
0.410
0.040
L1
L2
L3
0.64
0.89
2.54
0.025
0.035
0.100
0.040
0.050
0.115
1.02
1.27
2.92
0.090 BSC
0.180 BSC
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTP02N120P
IXTY02N120P
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
200
1000
VGS = 10V
7V
6V
160
800
140
700
120
VGS = 10V
8V
7V
900
ID - MilliAmperes
ID - MilliAmperes
180
5V
100
80
60
6V
600
500
400
5V
300
4V
40
200
20
4V
100
3V
0
0
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = 100mA Value vs.
Junction Temperature
200
350
3.0
VGS = 10V
7V
180
VGS = 10V
2.6
140
R DS(on) - Normalized
ID - MilliAmperes
160
6V
120
100
5V
80
60
2.2
I D = 200mA
1.8
I D = 100mA
1.4
1.0
40
0.6
4V
20
0
0.2
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
125
150
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100mA Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
220
5.0
200
VGS = 10V
4.5
180
160
TJ = 125ºC
3.5
ID - MilliAmperes
R DS(on) - Normalized
4.0
3.0
2.5
2.0
140
120
100
80
TJ = 25ºC
60
1.5
40
1.0
20
0
0.5
0
100
200
300
400
500
600
ID - MilliAmperes
© 2009 IXYS CORPORATION, All Rights Reserved
700
800
900
1000
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTP02N120P
IXTY02N120P
Fig. 8. Transconductance
400
300
350
TJ = - 40ºC
300
250
g f s - MilliSiemens
ID - MilliAmperes
Fig. 7. Input Admittance
350
200
TJ = 125ºC
25ºC
- 40ºC
150
100
25ºC
250
125ºC
200
150
100
50
50
0
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5.5
50
100
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
200
250
300
350
Fig. 10. Gate Charge
10
800
VDS = 600V
9
700
I D = 100mA
8
600
I G = 1mA
7
500
VGS - Volts
IS - MilliAmperes
150
ID - MilliAmperes
400
6
5
4
300
3
TJ = 125ºC
200
2
TJ = 25ºC
1
100
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.9
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Capacitance
1,000
10.0
Ciss
100
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
Coss
10
1.0
Crss
1
0
5
10
15
20
25
30
35
40
VDS - Volts
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_02N120P(F2)10-01-09