VMM 1500-0075X2 Dual Power MOSFET Module VDSS = 75V ID25 = 1560A RDS(on)= 0.38mΩ Phaseleg Configuration 8 9 11 Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80 TC = 25°C TC = 80°C j j 1560 1240 A A IF25 IF80 TC = 25°C (diode) j TC = 80°C (diode) j 1560 1240 A A Symbol Conditions (TVJ = 25°C, unless otherwise specified) RDSon VGS = 10 V; ID = ID80; on chip level VGS(th) VDS = 20 V; ID = 2.5 mA VDS = VDSS; VGS = 0 V VGS = ± 20 V; VDS = 0 V Characteristic Values min. typ. max. 0.38 mW 2 TVJ = 25°C TVJ = 125°C 4 V 0.15 mA mA 3.0 µA 1.5 Ciss Coss Crss VGS = 0 V; VDS = 25 V; f = 1 MHz 115 12.8 1.38 nF nF nF Qg Qgs Qgd VGS = 10 V; VDS = 37 V; ID = 1200 A 1950 580 450 nC nC nC inductive load VGS = 10 V; VDS = 37 V ID = 1200 A; RG = 1.8 Ω RG = RG ext + Rout driver 260 1680 500 880 3 54 0.06 ns ns ns ns mJ mJ mJ 260 1680 520 720 3.5 49 0.08 ns ns ns ns mJ mJ mJ td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH 11 10 9 8 Features Symbol td(on) tr td(off) tf Eon Eoff Erec 3 2 MOSFET T1 + T2 IGSS 2 1 10 IDSS 1 Power Screw Terminals Gate Control Pins 3 inductive load VGS = 10 V; VDS = 37 V ID = 1200 A; RG = 1.8 Ω RG = RG ext + Rout driver TVJ = 25°C TVJ = 125°C with heat transfer paste (IXYS test setup) 0.094 0.08 0.13 •Trench MOSFETs - low RDSon - optimized intrinsic reverse diode • package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate Applications •converters with high power density for - main and auxiliary AC drives of electric vehicles - 4 quadrant DC drives - power supplies with low input voltage, e.g. from fuel cells or solar cells K/W K/W j additional current limitation by external leads 20100629a © 2010 IXYS All rights reserved 1-5 VMM 1500-0075X2 Source Drain Diode Symbol Conditions Characteristic Values min. typ. max. VSD IF = 1200 A; VGS = 10 V; TVJ = 25°C TVJ = 125°C trr Qrr IRM VDS = 37 V; IF = 1200 A diF /dt = 800 A/µs TVJ = 25°C trr Qrr IRM VDS = 50 V; IF = 1000 A diF /dt = 760 A/µs TVJ = 125°C 1.18 0.9 120 2.1 30 V V ns µC A 120 2.8 34 ns µC A Module Symbol Conditions IRMS per main terminal Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA, 50/60 Hz Md Mounting torque Terminal connection torque (M6) 500 A -40...+175 -40...+125 °C °C 3600 V~ 2.25 - 2.75 4.5 - 5.5 Nm Nm Characteristic Values min. typ. max. Rpin to chip *) 0.06 mW Weight 250 g * VDS = ID·(RDS(on) + Rpin to chip) ) d = 0.8 M6x5 DIN970 2.2 23.2 1.5 0.25 3 30 +1 - 0.5 2.8 Dimensions in mm (1 mm = 0.0394“) Optional accessories for modules keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1) •Type ZY180L with wire length 350mm - for pins 4 (yellow wire) and 5 (red wire) - for pins 11 (yellow wire) and 10 (red wire) 79 Ø 6.5 • Type ZY180R with wire length 350mm - for pins 7 (yellow wire) and 6 (red wire) 11 21 34 48 62 - for pins 8 (yellow wire) and 9 (red wire) 18.5±0.3 8.5 46.5±0.3 74.5±0.3 93 110 © 2010 IXYS All rights reserved 20100629a 2-5 VMM 1500-0075X2 1.2 1200 IDSS = 6 mA 1000 1.1 800 VDSS ID 1.0 normal. 600 [A] 400 0.9 200 0.8 -40 -20 0 20 40 60 0 80 100 120 140 TJ = 125°C 0 1 2 3 TVJ [°C] Fig. 1 1000 Fig. 2 5V 6V 7V 8V 10 V 15 V 1000 800 ID 5 6 Typical transfer characteristics 1200 6V 7V 8V 10 V 15 V 4 VGS [V] Drain source breakdown voltage VDSS versus junction temperature 1200 TJ = 25°C 5V 800 600 ID TJ = 25°C [A] TJ = 125°C 600 [A] 400 400 VGS = 4 V 200 200 VGS = 4 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 VDS [V] 1.5 2.0 2.5 3.0 VDS [V] Fig. 3 Output characteristics at TJ = 25°C Fig. 4 Output characteristics at TJ = 125°C 2.0 1.0 1.6 0.8 3 VDS = 4 V TVJ = 125°C 5V 2 1.2 RDS(on) normal. RDS(on) RDS(on) normalized 0.6 RDS(on) RDS(on) incl. 0.4 mounting resistance 0.8 0.4 [mΩ] RDS(on) 6V 7V 10 V 15 V [mΩ] 1 0.2 0.0 -50 -25 0 25 50 75 0.0 100 125 150 0 0 200 TVJ [°C] Fig. 5 RDS(on) normalized to ID = 1150 A value vs. junction temperature 400 600 800 1000 1200 ID [A] Fig. 6 Drain source on-state resistance versus ID 20100629a © 2010 IXYS All rights reserved 3-5 VMM 1500-0075X2 10 2000 VDS = 37 V IG = 10 mA TVJ = 25°C 8 VGS 1600 6 ID 1200 [V] [A] 4 2 0 800 400 0 400 800 1200 0 -40 1600 0 40 80 QG [nC] Fig. 7 Gate charge characteristics Fig. 8 4 Eon, Erec 1600 tr RG = 1.8 Ω VDS = 37 V VGS = 0/10 V TVJ = 125°C 3 160 200 Drain current ID versus case temperature TC 80 800 tr 1200 2 [mJ] 120 TC [°C] 60 t Eoff [ns] [mJ] 800 1 10x Erec(off) RG = 1.8 Ω VDS = 37 V VGS = 0/10 V TVJ = 125°C 40 400 600 td(off) t 400 [ns] 20 200 td(on) 0 Eoff Eon 0 200 400 600 800 0 1200 1000 0 0 200 400 600 Fig. 9 Typ. turn-on energy and switching times versus drain current, inductive switching 12 2400 10 2000 Fig. 10 Typ. turn-off energy and switching times versus drain current, inductive switching 100 1600 ID = 1200 A VDS = 37 V VGS = 0/10 V TVJ = 125°C 6 [mJ] 4 2500 ID = 1200 A VDS = 37 V VGS = 0/10 V TVJ = 125°C 80 tr 8 0 1200 1000 ID [A] ID [A] Eon, Erec 800 t td(on) Eon 2 2000 Eoff 60 tf 1200 [ns] td(off) [mJ] 1500 Eoff 40 1000 20 500 t [ns] 800 400 10x Erec(on) 0 0 2 4 6 8 0 10 RG [Ω] Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching © 2010 IXYS All rights reserved 0 0 2 4 6 8 0 10 RG [Ω] Fig. 12 Typ. turn-off energy and switching times versus gate resistor, inductive switching 20100629a 4-5 VMM 1500-0075X2 6 60 VR = 37 V ID = 1200 A TVJ = 125°C IRM VR = 37 V ID = 1200 A TVJ = 125°C 5 4 40 Qrr 3 [µC] [A] 20 2 1 0 300 400 500 600 700 0 300 800 400 500 diF /dt [A/µs] 600 700 800 diF /dt [A/µs] Fig. 14 Reverse recovery charge Qrr of the body diode vs. di/dt Fig. 13 Reverse recovery current IRM of the body diode vs. di/dt 1200 160 1000 VR = 37 V IF = 1200 A TVJ = 125°C 140 trr 800 IS 120 600 [ns] [A] 400 100 200 80 400 500 600 700 0 0.0 800 0.2 0.4 diF /dt [A/µs] 0.6 0.8 1.0 1.2 VSD [V] Fig. 16 Source current IS vs. source drain voltage VSD (body diode) Fig. 15 Reverse recovery time trr of the body diode vs. di/dt 0.10 0.08 VGS VDS ID 0.9 VGS t 0.1 VGS 0.9 ID td(on) 0.1 ID tr [K/W] 0.04 0.9 ID 0.1 ID td(off) tf RthJH 0.06 t 0.02 0.00 1 10 100 1000 10000 t [ms] Fig. 17 Definition of switching times Fig. 18 Typ. transient thermal impedance 20100629a © 2010 IXYS All rights reserved 5-5