VMO 1600-02P PolarHTTM Module VDSS = 200V ID80 =1600A RDS(on)= 1.7mW max. N-Channel Enhancement Mode D S G KS KS G S Features MOSFET Conditions Maximum Ratings VDSS TVJ = 25°C to 150°C 200 V ± 20 V 1900 1600 A A ID25 ID80 TC = 25°C TC = 80°C IF25 IF80 TC = 25°C (diode) TC = 80°C (diode) Symbol Conditions -o u VGS 1900 1600 A A e Characteristic Values (TVJ = 25°C, unless otherwise specified) IGSS Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Erec td(on) tr td(off) tf Eon Eoff Erec RthJC RthJH a VDS = VDSS; VGS = 0 V; typ. max. 1.58 3.25 1.7 3.6 5 mW mW V 0.5 mA mA 2 µA 0.03 0.056 nC nC nC ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ K/W K/W 2.5 TVJ = 25°C TVJ = 125°C h IDSS TVJ = 25°C TVJ = 125°C 5.0 VGS = ± 20 V; VDS = 0 V VGS = 10 V; VDS = 0.5·VDSS; ID = ID80 p VGS(th) VGS = 10 V; ID = 1600 A; VDS = 20 V; ID = 5 mA s min. inductive load VGS = 10 V; VDS = 100 V ID = 1600 A; RG = 1.8 Ω TVJ = 25°C inductive load VGS = 10 V; VDS = 100 V ID = 1600 A; RG = 1.8 Ω TVJ = 125°C with heat transfer paste 2900 600 1600 320 1220 620 700 24 152 3.7 340 1220 740 580 28 147 4.9 0.037 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved •PolarHTTM technology t Symbol RDSon D - low RDSon - dv/dt ruggedness - fast intrinsic reverse diode • Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated ceramic base plate Applications •converters with high power density for - main & aux. AC drives of electric vehicles - DC drives - power supplies 20100302b 1-6 VMO 1600-02P Source Drain Diode Symbol Conditions Characteristic Values min. typ. max. VSD IF = 1600 A; VGS = 0 V; TVJ = 25°C TVJ = 125°C trr Qrr IRM VDS = 100 V; IF = 1600 A dVF /dt = 1300 A/µs TVJ = 25°C trr Qrr IRM VDS = 100 V; IF = 1600 A dVF /dt = 1300 A/µs TVJ = 125°C 1.17 1.13 340 40 210 V V ns µC A 380 56 250 ns µC A Module Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA; 50/60 Hz Md mounting torque (M6) teminal connection torque (M6) Symbol Conditions 3600 V~ Nm Nm Characteristic Values typ. max. -o Weight 250 Delivering Mode Base Qty Code Key Box 2 504288 e Marking on Product Part Name s VMO 1600-02P VMO 1600-02P g p h a Standard °C °C 2.25 - 2.75 4.5 - 5.5 min. Ordering -40...+150 -40...+125 t Conditions u Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 2-6 p h a s e -o u t VMO 1600-02P Optional accessories for modules Dimensions in mm (1 mm = 0.0394") keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1) • Type ZY180L with wire length 350 mm for pins 4 (Gate, yellow wire) and 5 (Kelvin Source, red wire) IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 3-6 VMO 1600-02P 12 1600 1400 ID = 1600 A VDS = 100 V 10 1200 8 VGS [V] ID [A] 1000 800 600 6 4 400 TJ = 25°C 200 0 2 TJ = 25°C 0 2 4 6 8 0 10 0 500 1000 1500 VGS [V] 1200 -o ID [A] 400 6V 800 200 5V 2 3 VDS [V] 4 a 1 0 5 h p -25 0 25 50 75 4 5 6V ID = 1600 A TJ = 125°C 3.0 3 2 0 100 125 150 175 TJ [°C] Fig. 5 Typ. drain source on-state resistance RDS(on) versus junction temperature TVJ IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 3 3.5 1 0.0 -50 2 4.0 RDS(on) [mΩ] 0.5 5 4 RDS(on) 1.0 1 5V RDS(on) normalized 1.5 0 Fig. 4 Typical output characteristic RDS(on) normal. 2.0 5V VDS [V] Fig. 3 Typical output characteristic 2.5 6V 400 s 200 RDS(on) normal. 7V 600 e 600 0 3500 TJ = 125°C VGS = 10 V 9V 8V 1000 800 0 t 1400 7V 1000 ID [A] 1600 u 1200 3000 Fig. 2 Typical gate charge characteristic TJ = 25°C VGS = 10 V 9V 8V 1400 2500 QG [nC] Fig. 1 Typical transfer characteristic 1600 2000 7V 2.5 2.0 8V 9V 10 V 1.5 1.0 0.5 0 200 400 600 800 1000 1200 1400 1600 ID [A] Fig. 6 Typ. drain source on-stateresistance RDS(on) versus ID 20100302b 4-6 VMO 1600-02P 30 VDS = 100 V VGS = 0/10 V RG = 1.8 Ω 600 10 400 td(on) 0 0 VDS = 100 V VGS = 0/10 V RG = 1.8 Ω 50 400 TJ = 125°C 200 0 0 200 400 600 800 1000 1200 1400 1600 1800 Eoff 0 0 200 400 600 800 1000 1200 1400 1600 1800 ID [A] ID [A] 2000 ID = 1600 A TJ = 125°C -o Eoff [mJ] 800 4000 150 Eoff td(off) 100 Erec(off) 0 2 4 RG [Ω] 6 0 10 8 0 0 2 4 6 0 10 8 h Fig. 10Typ. turn-off energy & switching times vs. gate resistor, inductive switching 300 p 400 1000 tf RG [Ω] Fig. 9 Typ. turn-on energy & switching times vs. gate resistor, inductive switching 500 2000 50 a 0 400 s 20 e Eon 3000 t [ns] td(on) 40 t [ns] Eon, Erec [mJ] 1200 5000 ID = 1600 A 200 60 6000 VDS = 100 V VGS = 0/10 V 250 1600 tr TJ = 125°C 300 u VDS = 100 V VGS = 0/10 V 80 Fig. 8 Typ. turn-off energy & switching times vs. drain source current, inductive switching t Fig.7 Typ. turn-on energy & switching times vs. drain source current, inductive switching 100 600 tf 200 Erec(off) Eon 800 td(off) t [ns] 15 5 100 800 TJ = 125°C Eoff [mJ] 20 1000 1000 t [ns] Eon, Erec [mJ] 25 1200 150 1200 tr 250 VR = 100 V IF = 1600 A TVJ = 125°C IRM [A] trr [ns] 200 300 VR = 100 V IF = 1600 A TVJ = 125°C 200 100 100 0 150 50 400 600 800 1000 1200 -diF /dt [A/µs] Fig.11 Typ. reverse recovery time trr of the body diode versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 0 400 600 800 1000 1200 -diF /dt [A/µs] Fig. 12 Typ. reverse recovery current IRM of the body diode versus di/dt 20100302b 5-6 VMO 1600-02P 60 1400 VR = 100 V TVJ = 125°C 1200 1000 40 IF [A] Qrr [µC] 50 1600 30 800 600 TJ = 125°C 400 20 TJ = 25°C 200 10 400 600 800 1000 0 0.0 1200 0.2 0.4 -diF /dt [A/µs] e 0.9 ID s 0.9 ID 0.1 ID a td(on) tr 1.2 1.4 td(off) t u 0.035 0.030 -o t 0.1 VGS Thermal Response [K/W] 0.9 VGS 0.1 ID 1.0 Fig. 14Source drain current IF (body diode) vs. typical source drain voltage VSD 0.040 VDS ID 0.8 VSD [V] Fig. 13 Typical reverse recovery charge Qrr of the body diode versus di/dt VGS 0.6 0.025 0.020 0.015 0.010 0.005 t tf 1 10 100 1000 10000 t [ms] Fig. 16 Typ. thermal impedance junction to heatsink ZthJH with heat transfer paste p h Fig. 15 Definition of switching times 0.000 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100302b 6-6